5 x 9 integrated optical star coupler in silicon-on-insulator technology

1996 ◽  
Vol 8 (6) ◽  
pp. 794-796 ◽  
Author(s):  
P.D. Trinh ◽  
S. Yegnanarayanan ◽  
B. Jalali
Keyword(s):  
Silicon On Insulator ◽  
Integrated Optical ◽  
Optical Star ◽  
Silicon On Insulator Technology

Highly Integrated Optical 4$\,\times\,$4 Crossbar in Silicon-on-Insulator Technology

2009 ◽  
Vol 27 (16) ◽  
pp. 3317-3323 ◽  
Author(s):  
A. Kazmierczak ◽  
W. Bogaerts ◽  
E. Drouard ◽  
F. Dortu ◽  
P. Rojo-Romeo ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Integrated Optical ◽  
Silicon On Insulator Technology

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology

2018 ◽  
Vol 86 (7) ◽  
pp. 199-206 ◽  
Author(s):  
Ömür Işıl Aydin ◽  
Judson Robert Holt ◽  
Cyrille Le Royer ◽  
Laks Vanamurthy ◽  
Thomas Feudel ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Fully Depleted ◽  
Silicon On Insulator Technology

scholarly journals Indication of the Coronavirus Model Using a Nanowire Biosensor

Proceedings ◽  
2020 ◽  
Vol 60 (1) ◽  
pp. 50
Author(s):  
Vladimir Generalov ◽  
Olga Naumova ◽  
Dmitry Shcherbakov ◽  
Alexander Safatov ◽  
Boris Zaitsev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Charge ◽  
Positive Charge ◽  
Silicon On Insulator ◽  
Nanowire Surface ◽  
Before And After ◽  
Effect Transistor ◽  
Current Value ◽  
Silicon On Insulator Technology

The presented results indicate virus-like particles of the coronavirus (CVP) using a nanowire (NW) biosensor based on silicon-on-insulator technology. In the experiment, we used suspensions of CVP and of specific antibodies to the virus. Measurements of the current value of the field-effect transistor before and after the introduction of the CVP on the surface of the nanowire were performed. Results showed antibody + CVP complexes on the phase section with the surface of the nanowire modulate the current of the field-effect transistor; CVP has an electrically positive charge on the phase section “nanowire surface-viral suspension»; antibody + CVP complexes have an electrically negative charge on the phase section “nanowire surface-viral suspension”; the sensitivity of the biosensor is made up of 10−18 M; the time display was 200–300 s.

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