Single Event Transients in CMOS Ring Oscillators
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In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip.
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2015 ◽
Vol 62
(6)
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pp. 2743-2751
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2014 ◽
Vol 61
(6)
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pp. 3416-3423
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2002 ◽
Vol 49
(6)
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pp. 3002-3008
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