scholarly journals Fully Integrated Low-Ripple Switched-Capacitor DC–DC Converter with Parallel Low-Dropout Regulator

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 98 ◽  
Author(s):  
Jeong-Yun Lee ◽  
Gwang-Sub Kim ◽  
Kwang-Il Oh ◽  
Donghyun Baek
Keyword(s):  
Transient Response ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Switched Capacitor ◽  
Wearable Electronics ◽  
Power Sources ◽  
Fully Integrated ◽  
Fast Transient Response ◽  
Low Dropout Regulator

In this paper, we propose a fully integrated switched-capacitor DC–DC converter with low ripple and fast transient response for portable low-power electronic devices. The proposed converter reduces the output ripple by filtering the control ripple via combining a low-dropout regulator with a main switched-capacitor DC–DC converter with a four-bit digital capacitance modulation control. In addition, the four-phase interleaved technique applied to the main converter reduces the switching ripple. The proposed converter provides an output voltage ranging from 1.2 to 1.5 V from a 3.3 V supply. Its peak efficiency reaches 73% with ripple voltages below 55 mV over the entire output power range. The transient response time for a load current variation from 100 μA to 50 mA is measured to be 800 ns. Importantly, the converter chip, which is fabricated using 0.13 μm complementary metal–oxide–semiconductor (CMOS) technology, has a size of 2.04 mm2. We believe that our approach can contribute to advancements in power sources for applications such as wearable electronics and the Internet of Things.

scholarly journals A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2108
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Low Voltage ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Low Voltage Operation ◽  
Error Amplifier ◽  
Ldo Regulator

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a –40 to 120°C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (Iq = 8.6 µA) and minimum area consumption (0.109 mm2) are maintained, including a reference voltage Vref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

Design of Fully Integrated Impedimetric CMOS Biosensor for DNA Detection

2014 ◽  
Vol 925 ◽  
pp. 524-528
Author(s):  
Vinny Lam Siu Fan ◽  
Yusmeeraz Binti Yusof
Keyword(s):  
Dynamic Range ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Impedance Change ◽  
Readout Circuit ◽  
Label Free ◽  
Fully Integrated

This paper described a label-free and fully integrated impedimetric biosensor using standard Complementary Metal Oxide Semiconductor (CMOS) technology to measure both capacitance and resistance of the electrode-electrolyte interface. Conventional impedance biosensors usually use bulky and expensive instruments to monitor the impedance change. This paper demonstrates a low power, high gain and low cost impedance readout circuit design for detecting the biomolecular interactions of deoxyribonucleic acid (DNA) strands at the electrode surface. The proposed biosensor circuit is composed of a transimpedance amplifier (TIA) with two quadrature phase mixers and finally integrated with 5μm x 5μm microelectrode based on 0.18μm Silterra CMOS technology process with 1.8V supply. The output value of the readout circuit is used to estimate the amplitude and phase of the measured admittance. The developed TIA can achieve a gain of 88.6dB up to a frequency of 50MHz. It also has very good linearity up to 2.7mA and the overall dynamic range is approximately 90dB.

scholarly journals Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Irene Brunetti ◽  
Lorenzo Pimpolari ◽  
Silvia Conti ◽  
Robyn Worsley ◽  
Subimal Majee ◽  
...  
Keyword(s):  
Hexagonal Boron Nitride ◽  
Flexible Substrate ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Building Blocks ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wearable Electronics ◽  
Low Dimensional ◽  
Low Dimensional Materials

AbstractComplementary electronics has represented the corner stone of the digital era, and silicon technology has enabled this accomplishment. At the dawn of the flexible and wearable electronics age, the seek for new materials enabling the integration of complementary metal-oxide semiconductor (CMOS) technology on flexible substrates, finds in low-dimensional materials (either 1D or 2D) extraordinary candidates. Here, we show that the main building blocks for digital electronics can be obtained by exploiting 2D materials like molybdenum disulfide, hexagonal boron nitride and 1D materials such as carbon nanotubes through the inkjet-printing technique. In particular, we show that the proposed approach enables the fabrication of logic gates and a basic sequential network on a flexible substrate such as paper, with a performance already comparable with mainstream organic technology.

A Low-Voltage and Label-Free Impedance-Based Miniaturized CMOS Biosensor for DNA Detection

2014 ◽  
Vol 67 (1) ◽  
Author(s):  
Vinny Lam Siu Fan ◽  
Wong How Hwan ◽  
Yusmeeraz Yusof
Keyword(s):  
Dynamic Range ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Label Free ◽  
Fully Integrated ◽  
Technology Process ◽  
Common Gate ◽  
Study Designs

This study designs a low-voltage, label-free and fully integrated impedance-based biosensor using standard complementary metal oxide semiconductor (CMOS) technology to compute both capacitance and resistance of the electrode-electrolyte interface. The proposed biosensor circuit is composed of a common-gate transimpedance amplifier (CG-TIA) with two quadrature phase Gilbert cell double-balanced mixers and finally integrated with microelectrode using 0.18 µm Silterra CMOS technology process. The output value of the readout circuit was used to estimate the magnitude and phase of the measured admittance. The developed CG-TIA can achieve a gain of 88.6 dB up to a frequency of 50 MHz. The overall dynamic range was approximately 116 dB. 

scholarly journals Towards Fully Integrated Portable Sensing Devices for COVID-19 and Future Global Hazards: Recent Advances, Challenges, and Prospects

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 915
Author(s):  
Tina Shaffaf ◽  
Saghi Forouhi ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Integrated Circuits ◽  
Point Of Care ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Turnaround Time ◽  
Oxide Semiconductor ◽  
Time Duration ◽  
Fully Integrated ◽  
Diagnostic Assays ◽  
Hands On

Since the onset of the coronavirus disease 2019 (COVID-19) pandemic, this fatal disease has been the leading cause of the death of more than 3.9 million people around the world. This tragedy taught us that we should be well-prepared to control the spread of such infectious diseases and prevent future hazards. As a consequence, this pandemic has drawn the attention of many researchers to the development of portable platforms with short hands-on and turnaround time suitable for batch production in urgent pandemic situations such as that of COVID-19. Two main groups of diagnostic assays have been reported for the detection of Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-CoV-2) including nucleic acid-based and protein-based assays. The main focus of this paper is on the latter, which requires a shorter time duration, less skilled technicians, and faces lower contamination. Furthermore, this paper gives an overview of the complementary metal-oxide-semiconductor (CMOS) biosensors, which are potentially useful for implementing point-of-care (PoC) platforms based on such assays. CMOS technology, as a predominant technology for the fabrication of integrated circuits, is a promising candidate for the development of PoC devices by offering the advantages of reliability, accessibility, scalability, low power consumption, and distinct cost.

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

A 60 GHz reconfigurable active phase shifter based on a vector modulator in 65 nm CMOS technology

2016 ◽  
Vol 8 (3) ◽  
pp. 399-404 ◽  
Author(s):  
Boris Moret ◽  
Nathalie Deltimple ◽  
Eric Kerhervé ◽  
Baudouin Martineau ◽  
Didier Belot
Keyword(s):  
Phase Shift ◽  
Phase Shifter ◽  
Complementary Metal Oxide Semiconductor ◽  
Active Phase ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
60 Ghz ◽  
Semiconductor Technology ◽  
Vector Modulator ◽  
Active Phase Shifter

This paper presents a 60 GHz reconfigurable active phase shifter based on a vector modulator implemented in 65 nm complementary metal–oxide–semiconductor technology. This circuit is based on the recombination of two differential paths in quadrature. The proposed vector modulator allows us to generate a phase shift between 0° and 360°. The voltage gain varies between −13 and −9 dB in function of the phase shift generated with a static consumption between 26 and 63 mW depending on its configuration.

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