Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications
Keyword(s):
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education.
1981 ◽
Vol 9
(1)
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pp. 51-57
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1991 ◽
Vol 49
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pp. 756-757
1983 ◽
Vol 10
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pp. 81-85
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1961 ◽
Vol 8
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pp. 160-162
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1967 ◽
Vol 3
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pp. 14-20
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1994 ◽
Vol 45
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pp. 1146-1151
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