scholarly journals Nichrome Thin Film Technology and its Application

1981 ◽  
Vol 9 (1) ◽  
pp. 51-57 ◽  
Author(s):  
Joachim Rölke
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Process Parameters ◽  
Measuring Equipment ◽  
High Stability ◽  
Low Noise ◽  
Temperature Coefficient Of Resistance ◽  
Thin Film Resistors ◽  
Composition Process

NiCr thin film resistors are widely used in the current resistor technology. Ranging from discrete resistors up to highest performance hybrid integrated circuits, vacuum deposited NiCr alloys cover extreme areas of application. Depending upon NiCr composition, process parameters, substrate and conductor materials, resistors with extremely low temperature coefficient of resistance (TCR) and high stability, low noise and distortion can be produced. NiCr resistors therefore offer particular advantages for applications with special demand for high stability as well as low TCR-like selected circuits for measuring equipment, data processing, telecommunication, etc.

Effect of silicidation on silicon-based thin film resistors in SiGe integrated circuits

2008 ◽  
Vol 20 (4) ◽  
pp. 354-359
Author(s):  
Sang-Heung Lee ◽  
Seung-Yun Lee ◽  
Chan Woo Park ◽  
Dongwoo Suh
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Thin Film Resistors ◽  
Silicon Based

Research on Fabrication of TaN Thin Film Resistors by Using Light Field Mask Method for Microwave Circuits

2014 ◽  
Vol 1082 ◽  
pp. 484-488
Author(s):  
Qian Tao Cao ◽  
Wang Bin ◽  
Zhen Guo Song ◽  
Jiang Hua Long
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Line Width ◽  
Light Field ◽  
Microwave Circuits ◽  
Dark Field ◽  
Direction Parallel ◽  
Film Resistor ◽  
Thin Film Resistors ◽  
Technical Specifications

Photolithography and etching by using dark field mask method in the fabrication of TaN thin film resistors applied in microwave circuits exists a problem of narrow alignment window. It results in inconsistency and poor yield. The process of TaN thin film resistors fabricated with Al2O3/TaN/ TiW/Au multistructure by using light field mask method was mainly discussed in this paper. Overlay accuracy of multilayer microstructure and accuracy of line width and line space of TaN thin films were measured by using metallographic microscope. Nonuniformity of resistances of TaN thin film resistors was also analyzed. Research on fabrication of TaN thin film resistor using light field mask method could achieve the following technical specifications: Overlay errors of multilayer microstructure on the direction parallel to two terminal electrodes’ connectivity were zero; Overlay errors of multilayer microstructure on the direction perpendicular to two terminal electrodes’ connectivity floated within 5μm to-5μm; Line width error of TaN thin film was from-2μm to 1μm. Nonuniformity of resistances of TaN thin film resistors was also consistent with the thickness nonuniformity of TaN thin film. Compared with dark field mask method, experiments revealed that photolithography and etching by means of light field mask method had advantages of wide window of alignment, high alignment precision and good uniformity. It can be concluded that photolithography and etching by using light field mask method will be widely applied in the fabrication of TaN thin film resistors for microwave integrated circuits.

Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1−xO3semiconductor

2016 ◽  
Vol 49 (24) ◽  
pp. 24LT01 ◽  
Author(s):  
Wei Song ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Stability
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