scholarly journals A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process

Electronics ◽  
2021 ◽  
Vol 10 (21) ◽  
pp. 2678
Author(s):  
Min-Su Kim ◽  
Heesauk Jhon
Keyword(s):  
Frequency Band ◽  
Electrostatic Discharge ◽  
High Electron Mobility Transistor ◽  
High Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Dc Power ◽  
Feedback Network ◽  
5 Ghz ◽  
Broadband Gain

This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had to consider the effects of the Electrostatic Discharge (ESD)-protected diode and the package, which can degrade the broadband performance. Therefore, the equivalent circuit models of the package and the ESD-protected diode were analyzed and simulated in this paper. The designed broadband gain amplifier from 50 MHz to 5 GHz frequency band has a die size of 700 μm x 1000 μm and consumes 156 mW of dc power, and it was simulated with a gain of 18.7 dB to 20.6 dB, a P1dB of 15.3 to 16.9 dBm, and a OIP3 of 26.5 to 31 dBm. Furthermore, the excellent gain flatness exhibited within 18.7 dB ± 1.92 dB at the interest of the frequency band.

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Bhuvaneshwari Subburaman ◽  
Kanthamani Sundharajan
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
High Electron Mobility ◽  
Content Type ◽  
Noise Amplifier

Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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