scholarly journals High-Power Vacuum Electronic Devices from Microwave to THz Band: Way Forward

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2436
Author(s):  
Glyavin Mikhail
Keyword(s):  
20Th Century ◽  
High Power ◽  
Electronic Devices ◽  
Vacuum Electronic Devices

It is generally accepted that the 20th century was the age of electronics [...]

Comparative analysis of existing methods for improving reliability of vacuum electronic devices

2019 ◽  
pp. 38-41
Author(s):  
A. A. Korneev
Keyword(s):  
Comparative Analysis ◽  
Electronic Device ◽  
Electronic Devices ◽  
Import Substitution ◽  
Electronic Control ◽  
Electronic Control System ◽  
Vacuum Electronic Devices ◽  
Electric Vacuum ◽  
Rational Control ◽  
Complex Technical Systems

The article presents the results of the study of the filament modes of electronic lamps and ensuring the rational temperature of the cathode. A brief description and comparative analysis of existing methods with the proposed author are given. The dependence diagrams obtained as a result of a real experiment are presented. A new method of rational control of the electric vacuum devices (EVP) filament mode is proposed, thereby increasing the reliability and increasing the durability of the EVP during operation in high-quality and expensive complex technical systems. According to the results of the study, a new specialized electronic device was developed, which allowed to smoothly regulate the supply of the filament voltage, thereby ensuring the rational control of the operation of the EVP. The technique and specialized electronic device are developed on the basis of modern scientific and technical achievements. This made it possible to increase the reliability and efficiency of the electronic control system for solving critical tasks. When implementing the developed device, the problem of import substitution was solved.

Graphite Nanocomposite Substrates for Improved Performance of Flexible, High-Power AlGaN/GaN Electronic Devices

2021 ◽  
Author(s):  
Katherine M. Burzynski ◽  
Nicholas R. Glavin ◽  
Michael Snure ◽  
Michael J. Motala ◽  
John Ferguson ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Improved Performance

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

Design and Characteristics of Microfocus X-ray Source with Sealed Tube and Transmissive Target on Diamond Window

2021 ◽  
Vol 79 (6) ◽  
pp. 631-640
Author(s):  
Takaaki Tsunoda ◽  
Takeo Tsukamoto ◽  
Yoichi Ando ◽  
Yasuhiro Hamamoto ◽  
Yoichi Ikarashi ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Speed ◽  
Electronic Device ◽  
High Reliability ◽  
Electronic Devices ◽  
Lithium Ion ◽  
High Power Density ◽  
High Magnification ◽  
X Ray

Electronic devices such as medical instruments implanted in the human body and electronic control units installed in automobiles have a large impact on human life. The electronic circuits in these devices require highly reliable operation. Radiographic testing has recently been in strong demand as a nondestructive way to help ensure high reliability. Companies that use high-density micrometer-scale circuits or lithium-ion batteries require high speed and high magnification inspection of all parts. The authors have developed a new X-ray source supporting these requirements. The X-ray source has a sealed tube with a transmissive target on a diamond window that offers advantages over X-ray sources having a sealed tube with a reflective target. The X-ray source provides high-power-density X-ray with no anode degradation and a longer shelf life. In this paper, the authors will summarize X-ray source classification relevant to electronic device inspection and will detail X-ray source performance requirements and challenges. The paper will also elaborate on technologies employed in the X-ray source including tube design implementations for high-power-density X-ray, high resolution, and high magnification simultaneously; reduced system downtime for automated X-ray inspection; and reduced dosages utilizing quick X-ray on-and-off emission control for protection of sensitive electronic devices.

E-blood: High power aqueous redox flow cell for concurrent powering and cooling of electronic devices

Nano Energy ◽  
2021 ◽  
pp. 106864
Author(s):  
Xun Wang ◽  
Mengqi Gao ◽  
Yann Mei Lee ◽  
Manohar Salla ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Flow Cell ◽  
Redox Flow Cell

Topology Optimization of High Power Electronic Devices

2001 ◽  
pp. 119-131
Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz
Keyword(s):  
Topology Optimization ◽  
High Power ◽  
Electronic Devices ◽  
Power Electronic
Sign in / Sign up

Export Citation Format

Share Document