scholarly journals A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based On InP DHBT Process

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1654
Author(s):  
Yanfei Hou ◽  
Weihua Yu ◽  
Qin Yu ◽  
Bowu Wang ◽  
Yan Sun ◽  
...  
Keyword(s):  
Output Power ◽  
High Gain ◽  
Input Power ◽  
Heterojunction Bipolar Transistor ◽  
Broadband Amplifier ◽  
Relative Bandwidth ◽  
Measurement Results ◽  
Double Heterojunction ◽  
Chip Size ◽  
Peak Gain

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm2, including DC and RF pads.

scholarly journals Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

2012 ◽  
Vol 2012 ◽  
pp. 1-15
Author(s):  
S. Laurent ◽  
J. C. Nallatamby ◽  
M. Prigent ◽  
M. Riet ◽  
V. Nodjiadjim
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Nonlinear Modeling ◽  
Low Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Specific Interest ◽  
Noise Sources ◽  
Measurement Results ◽  
Double Heterojunction

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

scholarly journals Dual-band impedance transformation networks for integrated power amplifiers

2014 ◽  
Vol 8 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Robert Wolf ◽  
Niko Joram ◽  
Stefan Schumann ◽  
Frank Ellinger
Keyword(s):  
Output Power ◽  
Power Amplifiers ◽  
Design Procedure ◽  
Dual Band ◽  
Analysis Method ◽  
Large Signal ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Relative Bandwidth ◽  
Measurement Results

This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

scholarly journals Wideband Dual-Polarized VHF Antenna for Space Observation Applications

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4351
Author(s):  
Alexandru Tatomirescu ◽  
Alina Badescu
Keyword(s):  
Radiation Pattern ◽  
Group Delay ◽  
High Gain ◽  
Antenna Element ◽  
Frequency Bandwidth ◽  
Radio Emissions ◽  
Relative Bandwidth ◽  
Pattern Stability ◽  
Dual Polarized ◽  
Delay Variation

This work presents the design for an antenna element that can be used in radio arrays for the monitoring and detecting of radio emissions from cosmic particles’ interactions in the atmosphere. For these applications, the pattern stability over frequency is the primary design goal. The proposed antenna has a high gain over a relative bandwidth of 88%, a beamwidth of 2.13 steradians, a small group delay variation and a very stable radiation pattern across the frequency bandwidth of 110 to 190 MHz. It is dual polarized and has a simple mechanical structure which is easy and inexpensive to manufacture. The measurements show that the ground has insignificant impact on the overall radiation pattern.

Design of Broadband LNA Using Improved Self-Bias Architecture

2019 ◽  
Vol 28 (08) ◽  
pp. 1920005 ◽  
Author(s):  
Tian Qi ◽  
Songbai He
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Power Gain ◽  
Matching Networks ◽  
Self Bias ◽  
Measurement Results ◽  
Chip Size ◽  
Simulation Results ◽  
Noise Amplifier ◽  
Ku Band

A broadband low-noise amplifier (LNA) using 0.13 [Formula: see text]m GaAs HEMT technology for Ku-band applications is presented in this paper. By introducing an improved self-bias architecture, the LNA is achieved with low noise figure (NF) and high power gain. Compared with traditional LNA, self-bias architecture can reduce DC supplies to single one, and the improved architecture proposed here also takes part in source matching to reduce the complexity matching networks for broadband applications. To verify, an LNA operating over 12–18-GHz bandwidth is fabricated. The measurement results, for all the 72 chips on the wafer, and their average values are in great accordance with the simulation results, with 25.5–27.5-dB power gain, 1.1–1.8-dB NF, 15–17.5-dBm output power at [Formula: see text] and with a chip size of 2 mm [Formula: see text] 1.5 mm.

scholarly journals A G-Band High Output Power and Wide Bandwidth Sheet Beam Extended Interaction Klystron Design Operating at TM31 with 2π Mode

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1948
Author(s):  
Shasha Li ◽  
Feng Zhang ◽  
Cunjun Ruan ◽  
Yiyang Su ◽  
Pengpeng Wang
Keyword(s):  
Output Power ◽  
Characteristic Impedance ◽  
Great Influence ◽  
Operating Mode ◽  
High Order Mode ◽  
Input Power ◽  
Mode Competition ◽  
Tuning Method ◽  
Peak Output Power ◽  
Extended Interaction

In this paper, we propose a high-order mode sheet beam extended interaction klystron (EIK) operating at G-band. Through the study of electric field distribution, we choose TM31 2π mode as the operating mode. The eigenmode simulation shows that the resonant frequency of the modes adjacent to the operating mode is far away from the central frequency, so there is almost no mode competition in our high mode EIK. In addition, by studying the sensitivity of the related geometry parameters, we conclude that the height of the coupling cavity has a great influence on the effective characteristic impedance, and the width of the gap mainly affects the working frequency. Therefore, it is necessary to strictly control the fabrication tolerance within 2 μm. Finally, the RF circuit using six barbell multi-gap cavities is determined, with five gaps for the input cavity and idler cavities and seven gaps for the output cavity. To expand the bandwidth, the stagger tuning method is adopted. Under the conditions of a voltage of 16.5 kV, current of 0.5 A and input power of 0.2 W, the peak output power of 650 W and a 3-dB bandwidth of 700 MHz are achieved without any self-oscillation.

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