scholarly journals Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

2012 ◽  
Vol 2012 ◽  
pp. 1-15
Author(s):  
S. Laurent ◽  
J. C. Nallatamby ◽  
M. Prigent ◽  
M. Riet ◽  
V. Nodjiadjim
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Nonlinear Modeling ◽  
Low Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Specific Interest ◽  
Noise Sources ◽  
Measurement Results ◽  
Double Heterojunction

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

2016 ◽  
Vol 25 (06) ◽  
pp. 1650053 ◽  
Author(s):  
Jincan Zhang ◽  
Yuming Zhang ◽  
Hongliang Lu ◽  
Yimen Zhang ◽  
Bo Liu ◽  
...  
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Heterojunction Bipolar Transistor ◽  
Voltage Controlled Oscillator ◽  
High Output Power ◽  
Fully Integrated ◽  
Low Phase Noise ◽  
High Output ◽  
Ku Band

In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77[Formula: see text]GHz to 14.8[Formula: see text]GHz, with a maximum 4.83[Formula: see text]dBm output power at 13.77[Formula: see text]GHz. The phase noise of the VCO is [Formula: see text]100.2[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset from 14.36[Formula: see text]GHz oscillation frequency. The VCO consumes 61.2[Formula: see text]mW from 6[Formula: see text]V supply and occupies an area of 0.51[Formula: see text]mm[Formula: see text][Formula: see text]mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed.

scholarly journals A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based On InP DHBT Process

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1654
Author(s):  
Yanfei Hou ◽  
Weihua Yu ◽  
Qin Yu ◽  
Bowu Wang ◽  
Yan Sun ◽  
...  
Keyword(s):  
Output Power ◽  
High Gain ◽  
Input Power ◽  
Heterojunction Bipolar Transistor ◽  
Broadband Amplifier ◽  
Relative Bandwidth ◽  
Measurement Results ◽  
Double Heterojunction ◽  
Chip Size ◽  
Peak Gain

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm2, including DC and RF pads.

scholarly journals Analysis of high-order sub-harmonically injection-locked oscillators

2020 ◽  
Vol 12 (8) ◽  
pp. 695-706
Author(s):  
Silvia Hernández ◽  
Mabel Pontón ◽  
Sergio Sancho ◽  
Almudena Suárez
Keyword(s):  
Phase Shift ◽  
Phase Noise ◽  
Oscillation Frequency ◽  
High Order ◽  
Noise Sources ◽  
Oscillation Phase ◽  
Noise Spectral Density ◽  
Input Noise ◽  
Input Source ◽  
Injection Locked Oscillators

AbstractHigh-order sub-harmonically injection-locked oscillators have recently been proposed for low phase-noise frequency generation, with carrier-selection capabilities. Though excellent experimental behavior has been demonstrated, the analysis/simulation of these circuits is demanding, due to the high ratio between the oscillation frequency and the frequency of the input source. This work provides an analysis methodology that covers the main aspects of the circuit behavior, including the detection of the locking bands and the prediction of the phase-noise spectral density. Initially, the oscillator in the presence of a multi-harmonic input source is described with a reduced-order envelope-domain formulation, at the oscillation frequency, based on an oscillator-admittance function extracted from harmonic-balance simulations. This allows deriving an expression for the oscillation phase shift with respect to the input source, and the average of this phase shift is shown to evolve continuously in the distinct synchronization bands obtained when varying a tuning voltage. This property can be used to detect the locking bands in circuit-level envelope-domain simulations, which, as shown here, can be done through different Fourier decompositions and sampling rates. The phase noise of the high-order sub-harmonic injection-locked oscillator under an arbitrary periodic input waveform is investigated in detail. The frequency response to the noise sources is described with a semi-analytical formulation, relying on the oscillator-admittance function in injection-locked conditions. The input noise is derived from the timing jitter of the injection source and the phase-noise response is shown to exhibit a low-pass characteristic, which initially follows the up-converted input noise and then the oscillator own noise sources. A method is proposed to identify the key parameters of the derived phase-noise spectrum from envelope-domain simulations. The various analysis methodologies have been applied to a prototype at 2.7 GHz at the sub-harmonic order N = 30 which has been manufactured and measured.

Design of S-Band Oscillators by Using GaAs ED02AH 0.2-μm Technology

2011 ◽  
Vol 383-390 ◽  
pp. 5874-5879
Author(s):  
Neda Kazemy Najafabadi ◽  
Sare Nemati ◽  
Massoud Dousti
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Oscillation Frequency ◽  
Negative Resistance ◽  
Noise Levels ◽  
Microwave Band ◽  
Microstrip Resonator ◽  
Feedback Type ◽  
Lumped Element

The S band limits from 2 to 4 GHz, is part of the electromagnetic spectrum’s microwave band. It is used by radars, satellites and some communications. This paper is concerned with the theory and design of 3 GHz feedback type and negative resistance oscillators by using Aiglent ADS software simulator with GaAs ED02AH 0.2-μm technology, and comparison of their results. A lumped element resonator has used in the design of feedback type oscillator and a negative resistance oscillator has utilized a microstrip resonator. The negative resistance oscillator operates at 3.072 GHz with phase noise levels at -99.49 dBc/Hz and -119.6 dBc/Hz at 100KHz and 1 MHz offset frequencies respectively. The phase noise levels of feedback type oscillator are -83.30 dBc/Hz and -103.3 dBc/Hz at 100KHz and 1 MHz offset at oscillation frequency of 3 GHz. Furthermore, we compared the output power of these oscillators and negative resistance oscillator showed 7.124 dBm, and feedback type oscillator presented -10.707dBm.

Results of Measurements and Limits Proposal for Low Frequency Noise in the Living Environment

1995 ◽  
Vol 14 (3) ◽  
pp. 135-141 ◽  
Author(s):  
Marianna Mirowska
Keyword(s):  
Low Frequency ◽  
Living Environment ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Air Conditioners ◽  
Noise Annoyance ◽  
Measurement Results

The paper presents measurement results of several low frequency noise sources, existing in houses (fans, air-conditioners, pumps). The measurements were carried out in dwellings, whose inhabitants complained about noise annoyance. Vercammen's proposal for low frequency limits, inside a dwelling, is discussed and the results of our own investigations on this topic are presented.

InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

2002 ◽  
Vol 38 (6) ◽  
pp. 289 ◽  
Author(s):  
B.P. Yan ◽  
C.C. Hsu ◽  
X.Q. Wang ◽  
E.S. Yang
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Double Heterojunction

Noise source location and scaling of subsonic upper-surface blowing

2020 ◽  
Vol 19 (3-5) ◽  
pp. 191-206
Author(s):  
Trae L Jennette ◽  
Krish K Ahuja
Keyword(s):  
Strouhal Number ◽  
Noise Source ◽  
Low Frequency ◽  
Directivity Pattern ◽  
Source Location ◽  
Dipole Source ◽  
Frequency Noise ◽  
Noise Sources ◽  
Trailing Edge ◽  
Trailing Edge Noise

This paper deals with the topic of upper surface blowing noise. Using a model-scale rectangular nozzle of an aspect ratio of 10 and a sharp trailing edge, detailed noise contours were acquired with and without a subsonic jet blowing over a flat surface to determine the noise source location as a function of frequency. Additionally, velocity scaling of the upper surface blowing noise was carried out. It was found that the upper surface blowing increases the noise significantly. This is a result of both the trailing edge noise and turbulence downstream of the trailing edge, referred to as wake noise in the paper. It was found that low-frequency noise with a peak Strouhal number of 0.02 originates from the trailing edge whereas the high-frequency noise with the peak in the vicinity of Strouhal number of 0.2 originates near the nozzle exit. Low frequency (low Strouhal number) follows a velocity scaling corresponding to a dipole source where as the high Strouhal numbers as quadrupole sources. The culmination of these two effects is a cardioid-shaped directivity pattern. On the shielded side, the most dominant noise sources were at the trailing edge and in the near wake. The trailing edge mounting geometry also created anomalous acoustic diffraction indicating that not only is the geometry of the edge itself important, but also all geometry near the trailing edge.

scholarly journals Study of the Properties of a Hybrid Piezoelectric and Electromagnetic Energy Harvester for a Civil Engineering Low-Frequency Sloshing Environment

Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 391
Author(s):  
Nan Wu ◽  
Yuncheng He ◽  
Jiyang Fu ◽  
Peng Liao
Keyword(s):  
Output Power ◽  
Energy Harvester ◽  
Civil Engineering ◽  
Maximum Output Power ◽  
Low Frequency ◽  
Electromagnetic Energy ◽  
Maximum Output ◽  
Piezoelectric Film ◽  
Hybrid Energy ◽  
Level Height

In this paper a novel hybrid piezoelectric and electromagnetic energy harvester for civil engineering low-frequency sloshing environment is reported. The architecture, fabrication and characterization of the harvester are discussed. The hybrid energy harvester is composed of a permanent magnet, copper coil, and PVDF(polyvinylidene difluoride) piezoelectric film, and the upper U-tube device containing a cylindrical fluid barrier is connected to the foundation support plate by a hinge and spring. The two primary means of energy collection were through the vortex street, which alternately impacted the PVDF piezoelectric film through fluid shedding, and the electromotive force (EMF) induced by changes in the magnetic field position in the conducting coil. Experimentally, the maximum output power of the piezoelectric transformer of the hybrid energy harvester was 2.47 μW (circuit load 270 kΩ; liquid level height 80 mm); and the maximum output power of the electromagnetic generator was 2.72 μW (circuit load 470 kΩ; liquid level height 60 mm). The low-frequency sloshing energy collected by this energy harvester can drive microsensors for civil engineering monitoring.

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