scholarly journals Pinhole Formation in Printed Electronic Traces Fabricated via Molten Metal Droplet Jetting

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1568
Author(s):  
Manoj Meda ◽  
Viktor Sukhotskiy ◽  
Denis Cormier

The fabrication of printed electronic devices via molten metal droplet jetting has enormous potential in flexible electronic device applications due to the extremely high electrical conductivity and excellent substrate adhesion of printed features. However, large pinholes (which could be detrimental to the feature performance) have been experimentally observed when molten metal droplets of aluminum 4043 alloy are deposited and solidified on a polyimide (PI) substrate. In this study, we have shown that subjecting the polymer substrate to elevated temperature during droplet deposition considerably reduces the number and size of pinholes. The formation mechanism behind the large pinholes is interpreted as the release of the adsorbed/absorbed moisture from the polymer substrate into the solidifying droplet due to the rapid rise in temperature of the substrate upon droplet impact. Through numerical modelling, we have shown that the temperature of the polyimide substrate underneath the deposited droplet exceeds the boiling point of water while the metal droplet is still in liquid state, showing the possibility of water vapor escaping from the substrate and causing pinholes in the solidifying metal.

2009 ◽  
Vol 24 (11) ◽  
pp. 3338-3342 ◽  
Author(s):  
Jeong-Yun Sun ◽  
Nanshu Lu ◽  
Juil Yoon ◽  
Kyu-Hwan Oh ◽  
Zhigang Suo ◽  
...  

For a flexible electronic device integrating inorganic materials on a polymer substrate, the polymer can deform substantially, but the inorganic materials usually fracture at small strains. This paper describes an approach to make such a device highly stretchable. A polyimide substrate is first coated with a thin layer of an elastomer, on top of which SiNx islands are fabricated. When the substrate is stretched to a large strain, the SiNx islands remain intact. Calculations confirm that the elastomer reduces the strain in the SiNx islands by orders of magnitude.


2016 ◽  
Vol 122 (8) ◽  
Author(s):  
SuLi Li ◽  
ZhengYing Wei ◽  
Jun Du ◽  
Guangxi Zhao ◽  
Xin Wang ◽  
...  

1989 ◽  
Vol 162 ◽  
Author(s):  
M. Kadono ◽  
S. Hayashi ◽  
N. Hirose ◽  
K. Itoh ◽  
T. Inushima ◽  
...  

Recently, there has been considerable interest in electronic device applications of diamond thin films. The chemical properties of diamond is stable. So diamond thin films become very useful if they are used for electronic devices. We consider diamond thin films as blue like emitting devices because diamond has a wide band gap(about 5.5eV). Some light emitting devices have been known [1]. First of all we have been trying to deposit diamond thin films on the large areas. If they deposit on the large areas, light emitting devices may be massproduced.


2016 ◽  
Vol 858 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Jie Zhang ◽  
Bernd Thomas ◽  
Edward Sanchez ◽  
Darren Hansen ◽  
...  

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively.


Author(s):  
Shanmuga Sundar Dhanabalan ◽  
Arun Thirumurugan ◽  
Muniyandi Muneeswaran ◽  
Sitharthan R ◽  
Karthikeyan Madurakavi ◽  
...  

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