scholarly journals A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 32
Author(s):  
Seonjun Choi ◽  
Changhwan Choi ◽  
Jae Kyeong Jeong ◽  
Myounggon Kang ◽  
Yun-heub Song
Keyword(s):  
Device Simulation ◽  
Vertical Channel ◽  
The Other ◽  
Hole Density ◽  
Nand Flash ◽  
Voltage Difference ◽  
Operation Method ◽  
Novel Structure ◽  
Ferroelectric Memory ◽  
Selective Program

In this study, the operation method of the proposed ferroelectric memory structure as a method to overcome the limitations of the existing Charge Trap Flash (CTF) memory Vertical NAND (V-NAND) structure was presented and verified through device simulation. The proposed structure and operation method applied the BiCS (Bit Cost Scalable) structure GIDL (Gate Induce Drain Leakage) deletion method to confirm that selective program operation is possible in the ferroelectric memory V-NAND (Vertical Channel NAND) structure. In particular, we confirmed that the proposed method can easily suppress the program operation by adjusting the hole density of the channel even in the “Y-mode” operation. The channel hole density adjustment that makes this possible can be easily controlled by the voltage difference between the bit line (BL) and drain select line (DSL) contacts. The proposed structure was verified through a device simulation, and as a result of the verification, it was confirmed that the channel hole can be selectively charged in the program operation. Through this, when the cell to be programmed shows the program operation of 2.3 V, the other cells do not. It was confirmed that it could be suppressed to 0.4 V.

scholarly journals Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1561
Author(s):  
Seonjun Choi ◽  
Changhwan Choi ◽  
Jae Kyeong Jeong ◽  
Myounggon Kang ◽  
Yun-heub Song
Keyword(s):  
Work Function ◽  
Leakage Current ◽  
Device Simulation ◽  
Vertical Channel ◽  
Indium Gallium Zinc Oxide ◽  
Nand Flash ◽  
Optimum Conditions ◽  
A Cell ◽  
Current Reduction ◽  
P Type

In this study, we developed a V-NAND with an improved IGZO-P type (IP) floating filler (FF) structure based on an IGZO channel verified in previous studies and demonstrated that it has a very fast erase speed through device simulation. The proposed FF structure can supply holes generated through the Gate-Induced Drain Leakage (GIDL) phenomenon in the upper polysilicon string select line (SSL) channel to the IGZO channel through a P-type filler, and the structure proposed by this operation shows a very fast erase speed of 4 μs. A fast erase speed was achieved because the filler adjacent to the IGZO channel, like IP structures in previous studies, functioned as a path through which electrons emitted from the charge storage layer moved easily, rather than simply supplying holes. This assumption was confirmed by assessing the change in electron density of the channel during the erase operation. Next, we investigated the optimum conditions for leakage current reduction through various condition changes of the lower ground select line (GSL) gate in the proposed structure. We confirmed that the leakage current of the proposed structure can be minimized by changing the number of lower GSL gates, changing the length of the GSL channel, and/or changing the work function of the GSL gate material. We obtained a leakage current of 10−17 A when the GSL channel was 480 nm long with six GSL gates, each with a length of 40 nm. The work function of the gates was 4.96 eV.

Generating Predictable and Adaptive Dialog Policies in Single- and Multi-domain Goal-oriented Dialog Systems

2021 ◽  
Vol 15 (04) ◽  
pp. 419-439
Author(s):  
Nhat Le ◽  
A. B. Siddique ◽  
Fuad Jamour ◽  
Samet Oymak ◽  
Vagelis Hristidis
Keyword(s):  
State Of The Art ◽  
Directed Graphs ◽  
Dependency Graph ◽  
The Other ◽  
Middle Ground ◽  
User Characteristics ◽  
Dialog Systems ◽  
Dependency Graphs ◽  
Novel Structure ◽  
Art Research

Most existing commercial goal-oriented chatbots are diagram-based; i.e. they follow a rigid dialog flow to fill the slot values needed to achieve a user’s goal. Diagram-based chatbots are predictable, thus their adoption in commercial settings; however, their lack of flexibility may cause many users to leave the conversation before achieving their goal. On the other hand, state-of-the-art research chatbots use Reinforcement Learning (RL) to generate flexible dialog policies. However, such chatbots can be unpredictable, may violate the intended business constraints, and require large training datasets to produce a mature policy. We propose a framework that achieves a middle ground between the diagram-based and RL-based chatbots: we constrain the space of possible chatbot responses using a novel structure, the chatbot dependency graph, and use RL to dynamically select the best valid responses. Dependency graphs are directed graphs that conveniently express a chatbot’s logic by defining the dependencies among slots: all valid dialog flows are encapsulated in one dependency graph. Our experiments in both single-domain and multi-domain settings show that our framework quickly adapts to user characteristics and achieves up to 23.77% improved success rate compared to a state-of-the-art RL model.

Ferromagnetic ZnO-TiO2 Core-Shell Nanowire PhotoCatalyst with High Efficiency and Recyclability

2011 ◽  
Vol 90-93 ◽  
pp. 1702-1705
Author(s):  
Xi Zhang ◽  
Gang Xiang
Keyword(s):  
High Efficiency ◽  
Hole Concentration ◽  
Band Gaps ◽  
The Other ◽  
Band Edge ◽  
Core Shell ◽  
Hole Density ◽  
The Core ◽  
Recyclable Photocatalyst ◽  
Shell Nanowires

We demonstrate the design of the recyclable photocatalyst based on ferromagnetic (FM) ZnO- TiO2 core-shell nanowires (NWs). Since the band gaps and band edge energies of bulk ZnO and anatase TiO2 are equal to each other within about 45mV, TiO2 and ZnO can form an p-p+ heterojunction free of band discontinuities and with a built-in potential. The resulting radial field will increase hole density in the TiO2 layer while reduce hole concentration at the interface between the core and the shell, which in turn will decrease the rate of recombination in the photocatalytic TiO2, and hence increase the efficiency of photocatalyst. On the other hand, the NWs with FM cores can be easily collected and refreshed using solenoid and suitable for the recyclable usage of the NW catalyst

scholarly journals Cloud Based Data Protection in Anonymously Controlled SDN

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Jian Shen ◽  
Jun Shen ◽  
Chin-Feng Lai ◽  
Qi Liu ◽  
Tianqi Zhou
Keyword(s):  
Data Protection ◽  
The Other ◽  
Software Defined Network ◽  
Storage Space ◽  
Control Plane ◽  
Conventional Model ◽  
Novel Structure ◽  
Data Plane ◽  
Single Controller ◽  
The One

Nowadays, Software Defined Network (SDN) develops rapidly for its novel structure which separates the control plane and the data plane of network devices. Many researchers devoted themselves to the study of such a special network. However, some limitations restrict the development of SDN. On the one hand, the single controller in the conventional model bears all threats, and the corruption of it will result in network paralysis. On the other hand, the data will be increasing more in SDN switches in the data plane, while the storage space of these switches is limited. In order to solve the mentioned issues, we propose two corresponding protocols in this paper. Specifically, one is an anonymous protocol in the control plane, and the other is a verifiable outsourcing protocol in the data plane. The evaluation indicates that our protocol is correct, secure, and efficient.

Device Characteristics of Single-Gate Vertical Channel (SGVC) 3D NAND Flash Architecture

2016 ◽  
Author(s):  
Chen-Jun Wu ◽  
Hang-Ting Lue ◽  
Tzu-Hsuan Hsu ◽  
Chih-Chang Hsieh ◽  
Wei-Chen Chen ◽  
...  
Keyword(s):  
Vertical Channel ◽  
Nand Flash
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