scholarly journals Structural Changes Induced by Heating in Sputtered NiO and Cr2O3 Thin Films as p-Type Transparent Conductive Electrodes

2021 ◽  
Vol 2 (2) ◽  
pp. 49-59
Author(s):  
Cecilia Guillén ◽  
José Herrero
Keyword(s):  
Thin Films ◽  
Transition Metal Oxides ◽  
Tensile Strain ◽  
Structural Changes ◽  
Compressive Strain ◽  
Vacancy Defects ◽  
Glass Substrates ◽  
P Type ◽  
Transparent Conductive Electrodes ◽  
Type Conduction

NiO and Cr2O3 are transition metal oxides with a partially filled d electron band that supports p-type conduction. Both are transparent to the visible light due to optical absorption beginning at wavelengths below 0.4 μm and the creation of holes by metal vacancy defects. The defect and strain effects on the electronic characteristics of these materials need to be established. For this purpose, NiO and Cr2O3 thin films were deposited on unheated glass substrates by reactive DC sputtering from metallic targets. Their structural, morphological, optical and electrical properties were analyzed comparatively in the as-grown conditions (25 °C) and after heating in air at 300 °C or 500 °C. The cubic NiO structure was identified with some tensile strain in the as-grown conditions and compressive strain after heating. Otherwise, the chromium oxide layers were amorphous as grown at 25 °C and crystallized into hexagonal Cr2O3 at 300 °C or above also with compressive strain after heating. Both materials achieved the highest visible transmittance (72%) and analogous electrical conductivity (~10−4 S/cm) by annealing at 500 °C. The as-grown NiO films showed a higher conductivity (2.5 × 10−2 S/cm) but lower transmittance (34%), which were related to more defects causing tensile strain in these samples.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

scholarly journals Study of structural, optical and electrical properties of thin Ag2Cu2O4 films prepared by pulsed laser deposition

2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Sintering Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Positive Sign ◽  
Glass Substrates ◽  
Atomic Force ◽  
Structural Surface ◽  
P Type

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

Properties of CuInS2 Thin Films Fabricated by SEL Method

Solar Energy ◽  
2005 ◽  
Author(s):  
Gye-Choon Park ◽  
Woon-Jo Jeong ◽  
Hyeon-Hun Yang ◽  
Hae-Duck Jung ◽  
Jin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Constant ◽  
Energy Band ◽  
Optical Energy ◽  
Glass Substrates ◽  
Cuins2 Thin Films ◽  
Sulfur Atmosphere ◽  
P Type

CuInS2 thin films were fabricated by sulphurization of S/In/Cu Stacked elemental layers (SEL) on slide glass substrates by annealing in vacuum of 10−3 Torr at temperature of 50 °C ∼ 350 °C. Some S/In/Cu SEL were vacuum annealed under a sulfur atmosphere. The thin films thus annealed were analyzed by measuring structural, electrical and optical properties. When CuInS2 thin films were made under a sulfur atmosphere, lattice constant of a and grain size of the thin film were a little larger than those in only vacuum annealing. The largest lattice constant of a and grain size was 5.63 Å and 1.2 μm respectively. Also, when the thin films were made under a sulfur atmosphere, conduction types were all p-type with resistivities of around 10−1 Ωcm and optical energy band gaps of the films were a little larger than those in only vacuum and the largest optical energy band gap of CuInS2 thin film was 1.53 eV.

scholarly journals Large thermoelectric power variations in epitaxial thin films of layered perovskite GdBaCo2O5.5±δ with a different preferred orientation and strain

2020 ◽  
Vol 8 (38) ◽  
pp. 19975-19983
Author(s):  
Arindom Chatterjee ◽  
Emigdio Chavez-Angel ◽  
Belén Ballesteros ◽  
José Manuel Caicedo ◽  
Jessica Padilla-Pantoja ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Tensile Strain ◽  
Preferred Orientation ◽  
Oxygen Stoichiometry ◽  
Layered Perovskite ◽  
Epitaxial Thin Films ◽  
P Type

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content

2007 ◽  
Vol 91 (23) ◽  
pp. 232115 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
Z. P. Wei ◽  
Y. Q. Gai ◽  
...  
Keyword(s):  
Thin Films ◽  
P Type ◽  
Mg Content ◽  
Type Conduction
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