scholarly journals Structural and Electrical Parameters of ZnO Thin Films Grown by ALD with either Water or Ozone as Oxygen Precursors

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 554 ◽  
Author(s):  
Aleksandra Seweryn ◽  
Rafal Pietruszka ◽  
Bartlomiej S. Witkowski ◽  
Aleksandra Wierzbicka ◽  
Rafal Jakiela ◽  
...  

Low temperature (at 100 °C and below) growth of ZnO thin films by atomic layer deposition (ALD) is demonstrated. Properties of the layers grown with two different oxygen reagents: ozone and water are compared. Diethylzinc (DEZ) was used as metal precursor. Electrical and structural properties of films obtained at several different growth temperatures, ranging from 50 °C to 250 °C were analyzed. It turned out that the film grown in the water-based process at 250 °C and all films grown with ozone have more ordered crystallographic structure with the privileged growth direction (001) perpendicular to the substrate than water-based samples grown in temperatures 100–200 °C. Higher free electron concentration at room temperature was observed for ozone-based samples grown at 100 °C and 150 °C in comparison to water-based samples obtained at the same growth temperature. Low value of resistivity in case of ozone-based samples grown at 100 °C is a promising result, however lower electron mobility requires further optimization.

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.


2008 ◽  
Vol 14 (4) ◽  
pp. 1053-1057 ◽  
Author(s):  
Hsing-Chao Chen ◽  
Miin-Jang Chen ◽  
Mong-Kai Wu ◽  
Yung-Chen Cheng ◽  
Feng-Yu Tsai

2018 ◽  
Vol 39 (3) ◽  
pp. 033004 ◽  
Author(s):  
Li Chen ◽  
Xinliang Chen ◽  
Zhongxin Zhou ◽  
Sheng Guo ◽  
Ying Zhao ◽  
...  

2010 ◽  
Vol 28 (5) ◽  
pp. 1111-1114 ◽  
Author(s):  
Jin Yong Kim ◽  
Yong-June Choi ◽  
Hyung-Ho Park ◽  
Stephen Golledge ◽  
David C. Johnson

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