scholarly journals Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 339 ◽  
Author(s):  
Gene Siegel ◽  
Gordon Gryzbowcki ◽  
Albert Hilton ◽  
Christopher Muratore ◽  
Michael Snure
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Research on the Cleaning Technology of Sapphire Substrates Precision Process for LED

2012 ◽  
Vol 452-453 ◽  
pp. 1415-1419
Author(s):  
Hai Zhou ◽  
Li Gang Bei ◽  
Yue Zang ◽  
Xiao Ming Xu ◽  
Zi Guo Zuo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
International Production ◽  
Cleaning Solution ◽  
Metal Organic ◽  
Cleaning Technology ◽  
Organic Chemical Vapor Deposition

The signification of the cleaning of sapphire substrates in precision processing has been presented. The cleaning principles of sapphire substrates have been discussed. The cleaning solution and technology of the sapphire substrates for international production have been presented by cleaning experiments. The size of dust is smaller than 0.13 . The sum of dusts is less than 5 for every substrate. Sapphire substrates can be used in metal organic chemical vapor deposition of GaN without re-cleaning by this method.

scholarly journals Growth of High-Quality GaN Films on Epitaxial AlN/Sapphire Templates

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Atomic Force ◽  
Low Dislocation Density ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Microscopy Images

High quality GaN films have been successfully grown on multi-AlN/sapphire templates by metal organic chemical vapor deposition system. The Hall mobility and the carrier concentration of 720 cm2/Vs and 6.7x1016 cm-3 at 300K, respectively, along with low dislocation density of 4.1x109 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 160 and 290 arcsec for (0004) and (20-24) reflection planes also obtained, respectively. Besides that, the atomic force microscopy images showed smooth surface morphology and a higher intensity near the band edge was also observed by photoluminescence measurement result.

Epitaxial CoSi2 formation using an oxynitride buffer layer

2009 ◽  
Vol 24 (8) ◽  
pp. 2705-2710 ◽  
Author(s):  
Jaesang Lee ◽  
Keunwoo Lee ◽  
Dongock Kim ◽  
Taeyong Park ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Growth Process ◽  
Film Growth ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.

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