scholarly journals Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

2020 ◽  
Vol 257 (12) ◽  
pp. 2000278
Author(s):  
Nadine Tillner ◽  
Christian Frankerl ◽  
Felix Nippert ◽  
Matthew J. Davies ◽  
Christian Brandl ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Point Defect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Uv C

Research on the Cleaning Technology of Sapphire Substrates Precision Process for LED

2012 ◽  
Vol 452-453 ◽  
pp. 1415-1419
Author(s):  
Hai Zhou ◽  
Li Gang Bei ◽  
Yue Zang ◽  
Xiao Ming Xu ◽  
Zi Guo Zuo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
International Production ◽  
Cleaning Solution ◽  
Metal Organic ◽  
Cleaning Technology ◽  
Organic Chemical Vapor Deposition

The signification of the cleaning of sapphire substrates in precision processing has been presented. The cleaning principles of sapphire substrates have been discussed. The cleaning solution and technology of the sapphire substrates for international production have been presented by cleaning experiments. The size of dust is smaller than 0.13 . The sum of dusts is less than 5 for every substrate. Sapphire substrates can be used in metal organic chemical vapor deposition of GaN without re-cleaning by this method.

Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

1997 ◽  
Vol 82 (6) ◽  
pp. 2990-2995 ◽  
Author(s):  
C.-M. Zetterling ◽  
M. Östling ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
X. Tang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Seiji Mita ◽  
Ramon Collazo ◽  
Raoul Schlesser ◽  
Zlatko Sitar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
Mixed Polarity ◽  
Metal Organic ◽  
Aln Buffer ◽  
Organic Chemical Vapor Deposition

ABSTRACTThe polarity control of GaN films grown on c-plane sapphire substrates by low pressure metal organic chemical vapor deposition (MOCVD) was achieved by using N2 as a diluent and transport gas. The type of polarity was governed by the substrate treatment prior to the GaN growth. N-face (-c) GaN films were only obtained by pre-nitridation of the sapphire substrate after a H2 anneal, while Ga-face (+c) GaN films were grown directly on the substrates or on properly annealed AlN buffer layers. In addition, GaN films on improperly annealed AlN buffer layers, that is, under- or over-annealed buffer layers, yielded films with mixed polarity. Smooth N-face GaN films with 2.5 nm RMS roughness, as determined by atomic force microscopy (AFM), were obtained with shorter nitridation times (less than 2 min). Wet chemical etching in an aqueous solution of potassium hydroxide (KOH) was used to determine the polarity type.

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