scholarly journals Laser Performance of Neodymium- and Erbium-Doped GYSGG Crystals

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 220
Author(s):  
Kai Zhong

Garnet crystals possess many properties that are desirable in laser host materials, e.g., they are suitable for diode laser (LD) pumping, stable, hard, optically isotropic, and have good thermal conductivity, permitting laser operation at high average power levels. Recently, a new garnet material, GYSGG, was developed by replacing some of the yttrium ions (Y3+) with gadolinium ions (Gd3+) in YSGG, demonstrating great potential as a laser host material. GYSGG crystals doped with trivalent neodymium ion (Nd3+) and erbium ions (Er3+) were successfully grown for laser generation in the near- and mid-infrared range, with some of the laser performances reaching the level of mature laser gain media. This paper gives an overview of the achievements made in Nd3+- and Er3+-doped GYSGG lasers at different wavelength ranges. Additionally, full descriptions on Q-switching, mode-locking and wavelength-selecting methods for Nd:GYSGG, and the mechanisms of power scaling by co-doping sensitizers and deactivators in Er:GYSGG, are given. It is expected that this review will help researchers from related areas to quickly gain an understanding of these laser materials and promotes their commercialization and applications.

2016 ◽  
Vol 25 (03) ◽  
pp. 1650028 ◽  
Author(s):  
Zhiqiang Lv ◽  
Jiarui Wu ◽  
Zibo Gong ◽  
Xing Lu ◽  
Kebin Shi

We report on a wavelength-tunable large-normal-dispersion erbium-doped mode-locking fiber oscillator. By using a grating as spectral filter, the intra-cavity mode-locking spectrum can be tuned continuously. The laser produces 250[Formula: see text]fs pulses with average power of 130[Formula: see text]mW and a tunable center wavelength range from 1528[Formula: see text]nm to 1570[Formula: see text]nm.


1993 ◽  
Vol 301 ◽  
Author(s):  
Tong Zhang ◽  
J. Sun ◽  
N.V. Edwards ◽  
D.E. Moxey ◽  
R.M. Kolbas ◽  
...  

ABSTRACTSharp photoluminescence from the intra-4f shell of Er3+ is observed from erbium doped AlxGal-xAs (0 ≤x ≤ 1) grown by molecular beam epitaxy. The intensity of the luminescence from the erbium is strongly dependent on the aluminum composition with a maximum at x ≈ 0.6. We will present a model that explains the variation in intensity based on the energy transfer coupling efficiency between the host semiconductor and the optically active erbium ions. The coupling efficiency is dominated by the alignment or misalignment of the erbium energy levels with the energy bands of the host semiconductor and by the excess carrier lifetime in the host. The data and model, which are presented here for the first time, are consistent with our previous work on the effects of co-doping with Be or Si and with other workers' measurements of thermal quenching in rare earth doped semiconductors.


2015 ◽  
Vol 16 (2) ◽  
pp. 245-252 ◽  
Author(s):  
A.H. Kevshyn ◽  
V. V. Halyan ◽  
T. A. Semenyuk

In paper the features of energy transformation processes in activated with erbium ions laser materials based on optical transitions in 4f shell of Er3+ ionwere discussed. Methods of excitation of the luminescence in chalcogenide glasses doped with Er3+ ions were described and found how its intensity depends on concentration of the ions. Up-conversion and cross-relaxation play an important role in the transformation of excitations in erbium-doped materials. In cross-relaxation the energy of one center can be nonradiatively transferred to another center or divided between the two centers, while in the up-conversion, however, energy of several centers summed up in one center, bringing it acts as an additional channel of luminescence quenching, or as a way of pumping of the higher energy levels. To improve the efficiency of optical excitation of many laser materials doped with erbium ions the sensitization with ytterbium ions that have intense absorption band in the range of ~0.9-1 µm with "effective" width of about 1000 cm-1 as well a channel of the efficient nonradiative excitation energy transfer to Er3+ ions is widely used. 


2016 ◽  
Vol 78 (3) ◽  
Author(s):  
H. Haris ◽  
S. W. Harun ◽  
A. R. Muhammad ◽  
H. Arof

Mode-locked erbium doped fiber laser by using graphene oxide (GO) that obtained by oxidation and ultra-sonification process of natural graphite was reported. GO produced was dissolved in water and mixed with Polyethylene Oxide (PEO) to form film. When the fabricated GO-PEO film saturable was employed in the proposed EDFL configuration, the laser generates 1.25 ps pulses at a repetition rate of 21.8 MHz with pump input of 70 mW. The stable mode-locking operation was observed within pump input power of 70 mW until 175 mW. Soliton-like spectrum was achieved with prominent Kelly-sideband and centre wavelength of 1558.6 nm.


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1741-1751
Author(s):  
Young In Jhon ◽  
Jinho Lee ◽  
Young Min Jhon ◽  
Ju Han Lee

Abstract Metallic 2D materials can be promising saturable absorbers for ultrashort pulsed laser production in the long wavelength regime. However, preparing and manipulating their 2D structures without layer stacking have been nontrivial. Using a combined experimental and theoretical approach, we demonstrate here that a metallic titanium carbide (Ti3C2Tx), the most popular MXene 2D material, can have excellent nonlinear saturable absorption properties even in a highly stacked state due to its intrinsically existing surface termination, and thus can produce mode-locked femtosecond pulsed lasers in the 1.9-μm infrared range. Density functional theory calculations reveal that the electronic and optical properties of Ti3C2Tx MXene can be well preserved against significant layer stacking. Indeed, it is experimentally shown that 1.914-μm femtosecond pulsed lasers with a duration of 897 fs are readily generated within a fiber cavity using hundreds-of-layer stacked Ti3C2Tx MXene saturable absorbers, not only being much easier to manufacture than mono- or few-layered ones, but also offering character-conserved tightly-assembled 2D materials for advanced performance. This work strongly suggests that as-obtained highly stacked Ti3C2Tx MXenes can serve as superb material platforms for versatile nanophotonic applications, paving the way toward cost-effective, high-performance photonic devices based on MXenes.


1995 ◽  
Vol 415 ◽  
Author(s):  
Oliver Just ◽  
Anton C. Greenwald ◽  
William S. Rees

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.


Author(s):  
Yangyu Liu ◽  
Xue Cao ◽  
AnHua Xian ◽  
Guangmiao Liu ◽  
Wei zhou ◽  
...  

Abstract We demonstrate stable continuous-wave mode-locking (CWML) pulses around 1645nm by employing the home-made Er:YAG ceramic. By using a fiber laser and semiconductor saturable absorber mirror (SESAM) with modulation depth of 1.2%, we get ML pulses with the output average power up to 815 mW, the pulse width shortened as ~4 ps, and the peak power of 1.8 kW. With the SESAM of modulation depth of 2.4%, the second-order harmonic ML pulses were also obtained. As far as we know, this is the first report of CWML from Er3+-doped ceramics and also the shortest pulse duration in Er3+-doped solid-state oscillators.


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