scholarly journals Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 130 ◽  
Author(s):  
Lu Zhou ◽  
Xuefeng Chu ◽  
Yaodan Chi ◽  
Xiaotian Yang
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gaas Surface ◽  
Maximum Enhancement ◽  
Mos Capacitors ◽  
X Ray ◽  
Good Surface ◽  
Passivation Time ◽  
Metal Oxide Semiconductor Capacitor

In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.

Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83837-83842 ◽  
Author(s):  
Sk Masiul Islam ◽  
K. Sarkar ◽  
P. Banerji ◽  
Kalyan Jyoti Sarkar ◽  
Biswajit Pal
Keyword(s):  
Quantum Dot ◽  
Leakage Current ◽  
Carrier Transport ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Embedded Devices ◽  
Mos Capacitors ◽  
Current Characteristics ◽  
Inas Quantum Dot ◽  
Metal Oxide Semiconductor Capacitor

Carrier transport vis-a-vis leakage current in GaAs MOS capacitors with various structures; quantum dot embedded devices show the lowest leakage.

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

2019 ◽  
Vol 963 ◽  
pp. 511-515
Author(s):  
A. Benjamin Renz ◽  
Vishal Ajit Shah ◽  
Oliver Vavasour ◽  
Yeganeh Bonyadi ◽  
G.W.C Baker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Control Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Schottky Rectifier ◽  
Metal Oxide Semiconductor Capacitor

Passivation treatments applied prior to Mo metallisation on Silicon Carbide (SiC) Schottky rectifier and metal-oxide-semiconductor capacitor (MOSCAP) structures are studied. A control sample and two treatments, comprising of an O2 oxidation and a phosphorus pentoxide (P2O5) deposition, were studied. Electrical characterisation results show that P2O5 treatment improves the homogeneity of the diodes, with the ideality factor reducing to 1.02 and the leakage current reducing by three orders of magnitude to 2×10-5 A/cm2. Furthermore, the SBH was lowered by 0.11 eV and the variance of all the P2O5 treated Schottky characteristics over the batch reduced. Characterisation by X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry, the Si:C ratio, of the SiC below the contact increased from 0.93:1 before treatment to 0.97:1 after P2O5 treatment.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

2021 ◽  
Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Depth Profiling ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
Experimental Findings ◽  
Electrical Characterizations

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

2016 ◽  
Vol 858 ◽  
pp. 659-662 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Claude Marcandella ◽  
Marc Gaillardin ◽  
...  
Keyword(s):  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Additional Contribution ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
X Ray ◽  
Annealing Conditions ◽  
Capacitance Voltage ◽  
Post Deposition

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing (PDA) processes in N2O or POCl3 atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl3-annealed oxide respect to the N2O annealed is discussed.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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