scholarly journals Tuning the Size, Shape and Density of γ′-GayFe4−yN Nanocrystals Embedded in GaN

Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 50 ◽  
Author(s):  
Andrea Navarro-Quezada ◽  
Thibaut Devillers ◽  
Tian Li ◽  
Alberta Bonanni
Keyword(s):  
Growth Parameters ◽  
Vapour Phase ◽  
Spatial Density ◽  
Magnetic Response ◽  
Vapour Phase Epitaxy ◽  
Size And Shape ◽  
On Demand ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Self Assembled ◽  
Magnetic Nanocrystal

Phase-separated semiconductor systems hosting magnetic nanocrystal (NCs) are attracting increasing attention, due to their potential as spintronic elements for the next generation of devices. Owing to their morphology- and stoichiometry-dependent magnetic response, self-assembled γ ’-Ga y Fe 4 − y N NCs embedded in a Fe δ -doped GaN matrix, are particularly versatile. It is studied and reported here, how the tuning of relevant growth parameters during the metalorganic vapour phase epitaxy process affects the crystalline arrangement, size, and shape of these self-assembled nanostructures. In particular, it is found that the Ga-flow provided during the δ -doping, determines the amount of Fe incorporated into the layers and the spatial density of the NCs. Moreover, the in-plane dimensions of the NCs can also be controlled via the Ga-flow, conditioning the aspect-ratio of the embedded nanostructures. These findings are pivotal for the design of nanocrystal arrays with on-demand size and shape, essential requirements for the implementation into functional devices.

Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy

1998 ◽  
Vol 191 (3) ◽  
pp. 347-356 ◽  
Author(s):  
N Carlsson ◽  
T Junno ◽  
L Montelius ◽  
M.-E Pistol ◽  
L Samuelson ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Self Assembled

Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells

1994 ◽  
Vol 340 ◽  
Author(s):  
P. Bigenwald ◽  
O. Laire ◽  
X. Zhang ◽  
O. Briot ◽  
B. Gil ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Growth Parameters ◽  
Vapour Phase ◽  
Light Hole ◽  
Type I ◽  
Vapour Phase Epitaxy ◽  
Novel Approach ◽  
Reflectivity Spectra ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTWe study the optical properties of metalorganic vapour phase epitaxy (MOVPE) grown (Ga,In)As-GaAs single quantum wells as a function of the growth parameters. Our objective is to study the properties of the type II light-hole excitons with light-hole wave function delocalized in the thick GaAs layers and electrons confined in the ternary alloy. However, marked structures (like for type I excitons) are observed in the reflectivity spectra. This we interpret in the context of a novel approach of the exciton problem via a self-consistent calculation of the electron-hole interaction.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

scholarly journals Towards practical applications of quantum emitters in boron nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Koperski ◽  
K. Pakuła ◽  
K. Nogajewski ◽  
A. K. Dąbrowska ◽  
M. Tokarczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Vapour Phase ◽  
Emission Characteristics ◽  
Vapour Phase Epitaxy ◽  
Practical Applications ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Polydimethylsiloxane Films ◽  
Background Luminescence ◽  
Quantum Emitters

AbstractWe demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

1991 ◽  
Vol 115 (1-4) ◽  
pp. 248-253 ◽  
Author(s):  
H. Protzmann ◽  
T. Marschner ◽  
O. Zsebök ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metalorganic Vapour Phase Epitaxy

Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 104-109 ◽  
Author(s):  
C. Liu ◽  
P.A. Shields ◽  
S. Denchitcharoen ◽  
S. Stepanov ◽  
A. Gott ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Epitaxial Lateral Overgrowth ◽  
Vapour Phase Epitaxy ◽  
Lateral Overgrowth ◽  
Metalorganic Vapour Phase Epitaxy
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