scholarly journals Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 395 ◽  
Author(s):  
Víctor Herrera ◽  
Tomás Díaz-Becerril ◽  
Eric Reyes-Cervantes ◽  
Godofredo García-Salgado ◽  
Reina Galeazzi ◽  
...  
Keyword(s):  
Raw Materials ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Fixed Amount ◽  
X Ray ◽  
Doped Zno

Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

scholarly journals Highly Visible Photoluminescence from Ta Doped Structures of ZnO Films Grown by HFCVD

2018 ◽  
Author(s):  
V. Herrera ◽  
T. Díaz-Becerril ◽  
E. Reyes-Cervantes ◽  
G. García-Salgado ◽  
R. Galeazzi ◽  
...  
Keyword(s):  
Raw Materials ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Fixed Amount ◽  
The Matrix ◽  
Spherical Structures ◽  
Doped Zno

Tantalum doped ZnO structures (ZnO:Ta) were synthesized and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pill made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. Percentage of tantalum was varied from 0 to 500 mg by varying the percentage of tantalum oxide in the mixture of the pill source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without contamination, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by EDS and XRD measurements. From SEM images from undoped samples exhibited mostly micro sized semi-spherical structures while doped samples displayed a trend to grown as nanocrystalline rods. The presence of tantalum during the synthesis affects the way of the growth. Green photoluminescence at naked eye was observed when Ta doped samples were illuminated by ultraviolet radiation and confirmed by PL spectra. PL intensity on Ta doped ZnO varied from those undoped samples up to 8 times.

Role of Dipping Cycle on Mn Doped ZnO Thin Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2019 ◽  
Vol 17 (12) ◽  
pp. 987-990
Author(s):  
K. Rathi Devi ◽  
G. Selvan ◽  
M. Karunakaran ◽  
G. Rajesh Kanna ◽  
K. Kasirajan
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Structural Parameters ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
Zno Films ◽  
Line Profile Analysis ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

In this work, Mn doped Zinc Oxide (ZnO) thin films were coated onto glass substrates by low cost SILAR technique by altering dipping cycle such as 40, 60, 80 and 100. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with dipping cycle. The structural, morphological, elemental and FTIR properties of the coated Mn doped ZnO films were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), EDAX and FTIR spectrophotometer respectively. The prepared films were found to be hexagonal structure with polycrystalline in nature with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters. The crystallite size values are increased with increase of dipping cycle. Morphological results showed that the dipping cycle has a marked effect on morphology of the prepared Mn doped ZnO thin films. EDAX studies showed that the presence of Zinc, Oxygen and Mn content.

scholarly journals CVD PREPARED Mn-DOPED ZnO NANOWIRES

2017 ◽  
Vol 24 (1&2) ◽  
pp. 125-130
Author(s):  
T.L. Phan ◽  
R. Vincent ◽  
D. Cherns ◽  
N.X. Nghia
Keyword(s):  
Magnetic Measurements ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Wavenumber Range ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Mn Doped

Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and Raman scattering (RS) spectra are almost independent of the Mn doping. However, the increase in concentration of Mn above 1.6 at% weakens significantly the PL signal and the RS-lines intensity in the low wavenumber range of 300–480 cm-1, and concurrently increases the RS-lines intensity in the higher wavenumber range of 480-700 cm-1.. Magnetic measurements determined the Curie temperature of Mn-doped ZnO nanowire to be about 37 K.

scholarly journals Investigation on Al Doped Zno Thin Films and its N-Alzno/P-Si Junction Diodes Via Dip Coating and JNSP Techniques

2018 ◽  
Vol 34 (5) ◽  
pp. 2590-2596
Author(s):  
S. Kalidass ◽  
P. Thirunavukkarasu ◽  
M. Balaji ◽  
J. Chandrasekaran
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Sem Images ◽  
X Ray ◽  
Maximum Conductivity ◽  
Jet Nebulizer ◽  
Doped Zno

From this investigation, we find out that the dip coating and jet nebulizer spray pyrolysis (JNSP) techniques are the suitable to fabricate aluminum doped zinc oxide (AlZnO) thin films and the P-N junction diode of n-AlZnO/p-Si at 450°C. Several characterization techniques are used to measure the consequences of Al doping (0, 0.5, 1.0, 1.5, 2.0 and 2.5 wt.%) on structural, optical, electrical and diode properties of ZnO. We recorded that the films were polycrystalline with a hexagonal structure of ZnO by the X-ray diffraction (XRD) analysis. The disparities of the sub-micro sized rod-like structures are observed from the scanning electron microscope (SEM) images. The energy dispersive X-ray spectroscopy (EDX) analysis proved that the elements of Al, Zn and O were presented in the film. The absorbance and band gap energy (Eg) values were ascertained from the ultraviolet visible (UV-vis) analysis. By the current-voltage (I-V) characterization, the maximum conductivity value is detected for 1.5 wt.% of Al doped ZnO film. The I-V measurement for finding the diode parameters of ideality factor (n) and barrier height (Fb) in dark and under light was taken.

Magnetic Properties of Bulk Zn0.95-XMnXFe0.05O2 Prepared by Sol-Gel Method and Subsequent Hot Pressing

2011 ◽  
Vol 268-270 ◽  
pp. 356-359 ◽  
Author(s):  
Wen Song Lin ◽  
C. H. Wen ◽  
Liang He
Keyword(s):  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Sol Gel ◽  
Secondary Phase ◽  
X Ray Diffraction ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Mn, Fe doped ZnO powders (Zn0.95-xMnxFe0.05O2, x≤0.05) were synthesized by an ameliorated sol-gel method, using Zn(CH3COO)2, Mn(CH3COO)2and FeCl2as the raw materials, with the addition of vitamin C as a kind of chemical reducer. The resulting powder was subsequently compacted under pressure of 10 MPa at the temperature of 873K in vacuum. The crystal structure and magnetic properties of Zn0.95-xMnxFe0.05O2powder and bulk samples have been investigated by X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). X-ray photoelectron spectroscopy (XPS) was used to study chemical valence of manganese, iron and zinc in the samples. The x-ray diffraction (XRD) results showed that Zn0.95-xMnxFe0.05O (x≤0.05) samples were single phase with the ZnO-like wurtzite structure. No secondary phase was found in the XRD spectrum. X-ray photoelectron spectroscopy (XPS) showed that Fe and Mn existed in Zn0.95-xMnxFe0.05O2samples in Fe2+and Mn2+states. The results of VSM experiment proved the room temperature ferromagnetic properties (RTFP) of Mn, Fe co-doped ZnO samples.

scholarly journals Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

2009 ◽  
Vol 39 (5) ◽  
pp. 608-611 ◽  
Author(s):  
Tammy Ben-Yaacov ◽  
Tommy Ive ◽  
Chris G. Van de Walle ◽  
Umesh K. Mishra ◽  
James S. Speck ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films ◽  
Doped Zno ◽  
Metalorganic Chemical

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

The Effect of the Cu Source on Optical Properties of Cu-Doped ZnO Films

2014 ◽  
Vol 936 ◽  
pp. 618-623
Author(s):  
Lung Chien Chen ◽  
Xiu Yu Zhang ◽  
Kuan Lin Lee
Keyword(s):  
Optical Properties ◽  
Copper Acetate ◽  
Copper Nitrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray ◽  
Spray Method ◽  
Potential Applications ◽  
Doped Zno

Cu-doped ZnO (CZO) films have been widely discussed due to its potential applications in semiconductor devices, such as gas sensors or solar cells, but few articles were reported to show the effect on properties of CZO films by using different Cu sources. The article demonstrates that CZO films have been prepared by using different Cu source via a simple ultrasonic spray method, in which copper nitrate and copper acetate were used as copper sources. Optical properties of CZO films prepared by copper nitrate and copper acetate were investigated by transmittance and photoluminescence measurement. The X-ray diffraction analysis and field emission scanning electron microscopy were used to investigate the composition and the morphology of the films. The CZO films prepared by using copper acetate shows better optical properties by comprehensive analysis.

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