scholarly journals CVD PREPARED Mn-DOPED ZnO NANOWIRES

2017 ◽  
Vol 24 (1&2) ◽  
pp. 125-130
Author(s):  
T.L. Phan ◽  
R. Vincent ◽  
D. Cherns ◽  
N.X. Nghia
Keyword(s):  
Magnetic Measurements ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Wavenumber Range ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Mn Doped

Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and Raman scattering (RS) spectra are almost independent of the Mn doping. However, the increase in concentration of Mn above 1.6 at% weakens significantly the PL signal and the RS-lines intensity in the low wavenumber range of 300–480 cm-1, and concurrently increases the RS-lines intensity in the higher wavenumber range of 480-700 cm-1.. Magnetic measurements determined the Curie temperature of Mn-doped ZnO nanowire to be about 37 K.

Fabrication and Optical Properties of Mn-Doped ZnO Nanowires

2009 ◽  
Vol 79-82 ◽  
pp. 453-456 ◽  
Author(s):  
Jian Wang ◽  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Yue Zhang
Keyword(s):  
Chemical Vapor ◽  
Vacancy Defect ◽  
Zno Nanowires ◽  
Chemical Vapor Deposition Method ◽  
Second Phase ◽  
Au Catalyst ◽  
Xps Spectra ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO nanowires were successfully synthesized on silicon substrate by chemical vapor deposition method with Au catalyst. The X-ray diffraction (XRD) pattern indicates that the Mn-doped ZnO nanowires are hexagonal wurtzite structure and no second phase. The X-ray spectroscopy (EDX) and X-ray photoelectron spectrum (XPS) spectra exhibited the Mn ions were induced into the ZnO nanowires. Photoluminescence (PL) spectra were excited by 325 nm Xe lamp laser. Three peaks are observed in Mn-doped ZnO nanowires, two ultraviolet (UV) emissions at 370 nm and 386 nm, a visible emission at 405 nm. The emission at 405 nm is first found in Mn-doped ZnO nanowires that attributed to the electron transition from bottom of the conduction band to zinc vacancy defect energy level. The existence of Mn element changes the optical property of the ZnO nanowires.

Fabrication, characterization and magnetic properties of Na-doped ZnO nanorods

2016 ◽  
Vol 09 (03) ◽  
pp. 1650039 ◽  
Author(s):  
Jingyuan Piao ◽  
Li-Ting Tseng ◽  
Kiyonori Suzuki ◽  
Jiabao Yi
Keyword(s):  
Magnetic Measurements ◽  
Zno Nanorods ◽  
X Ray Diffraction ◽  
Paramagnetic Resonance ◽  
X Ray ◽  
Shallow Donors ◽  
Na Doping ◽  
Transmission Electron ◽  
Doped Zno ◽  
Electron Paramagnetic

Na-doped ZnO nanorods have been fabricated through a hydrothermal method. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses indicate that the d spacing of ZnO increases with increasing doping concentration, suggesting the effective incorporation of dopant Na in the samples. Electron paramagnetic resonance (EPR) measurements indicate that there are shallow donors in pure ZnO samples and the shallow donors are strongly prohibited by Na doping. In addition, the resonance at g = 2.005 suggests the formation of Zn vacancies. Magnetic measurements indicate that pure ZnO is paramagnetic and Na doping leads to ferromagnetism at room temperature. Moreover, 0.5% Na-doped ZnO nanorods exhibits the largest saturation magnetization.

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

scholarly journals Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 395 ◽  
Author(s):  
Víctor Herrera ◽  
Tomás Díaz-Becerril ◽  
Eric Reyes-Cervantes ◽  
Godofredo García-Salgado ◽  
Reina Galeazzi ◽  
...  
Keyword(s):  
Raw Materials ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Sem Images ◽  
Wurtzite Phase ◽  
Fixed Amount ◽  
X Ray ◽  
Doped Zno

Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

The X-Ray Powder Diffraction Patterns and Crystal Structure for Al2M3Y(M=Cu, Ni)

2014 ◽  
Vol 950 ◽  
pp. 48-52
Author(s):  
De Gui Li ◽  
Ming Qin ◽  
Liu Qing Liang ◽  
Zhao Lu ◽  
Shu Hui Liu ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Powder Diffraction ◽  
Diffraction Data ◽  
Hexagonal Structure ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Arc Melting ◽  
Diffraction Patterns

The Al2M3Y(M=Cu, Ni) compound was synthesized by arc melting under argon atmosphere. The high-quality powder X-ray diffraction data of Al2M3Y have been presented. The refinement of the X-ray diffraction patterns for the Al2M3Y compound show that the Al2M3Y has hexagonal structure, space groupP6/mmm(No.191), with a = b = 5.1618(2) Å, c = 4.1434(1) Å,V= 95.6 Å3,Z= 1,ڑx= 5.7922 g/cm3,F30= 155.5(0.0057, 34), RIR = 2.31 for Al2Cu3Y, and with a = b = 5.0399(1) Å, c = 4.0726(1) Å,V= 89.59 Å3,Z= 1,ڑx= 5.9118 g/cm3,F30= 135.7(0.0072, 30), RIR = 2.54 for Al2Ni3Y.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films

1999 ◽  
Vol 595 ◽  
Author(s):  
M.L. Caldwell ◽  
H.H. Richardson ◽  
M.E. Kordesch
Keyword(s):  
Aluminum Nitride ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Microscopy Imaging ◽  
X Ray ◽  
Aln Film ◽  
Ir Reflectance ◽  
Mn Doped

AbstractAn aluminum nitride (AlN) film deposited on silicon (100) was used as the substrate for growing manganese (Mn) doped AlN film by metal organic chemical vapor deposition (MOVCD). The (15.78 [.proportional]m) under layer of AlN was grown at 615°C at a pressure of 10−4 Torr. The (2.1 [.proportional]m) top layer of Mn-AlN was grown at the same temperature and pressure but doped with pulse valve introduction of the manganese decacarbonyl (100 ms on, 100 ms off). The film was then characterized ex situ with IR reflectance microscopy, X-ray diffraction, scanning electron microscopy imaging, cathodoluminescence, and X-ray fluorescence. The IR reflectance measurements showed a strong (A1) LO mode for AlN at 920 cm−1 and 900 cm−1 with a shoulder at 849 cm−1. X-ray Diffraction yielded three diffraction peaks at a 2ø position of 33, 36 and 38 degrees corresponding to 100, 002, and 101 lattice planes respectively. Cathodoluminescence results show strong visible emitted light from incorporated manganese. The relative percentage of manganese to aluminum was below the detection limit (0.01 %) of the Xray fluorescence spectrometer. Amorphous Mn doped AlN films have also been grown using a low temperature atomically abrupt sputter epitaxial system. The amorphous Mn doped AlN showed no cathodoluminescence.

The Microstructure of Fe7C3 Formed at 300°C by Plasma Enhanced Chemical Vapor Deposition (PECVD)

1993 ◽  
Vol 313 ◽  
Author(s):  
H. Siriwardane ◽  
P. Fraundorf ◽  
J.W. Newkirk ◽  
O.A. Pringle ◽  
W.J. James
Keyword(s):  
Oxidation Process ◽  
Iron Carbide ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Corrosion And Wear ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Iron Phase ◽  
Diffraction Patterns

Thin iron carbide films were prepared by introducing iron penta carbonyl (FeCO5) and hydrogen (H2) into a glow discharge. The films are of potential interest in corrosion and wear resistant applications. X-ray diffraction data of films (≈ 7000 Å thick) deposited on glass at 300°C evidenced only Fe7C3. Thinner films were required for examination by analytical and high resolution transmission electron Microscopy. Therefore, two sets of films (“thin” < 200 Å and “thick” ≈ 800 Å) were plasma-deposited on carbon or holey carbon films supported on copper grids. The thin TEM specimens exhibited a fine texture and gave rise to ring diffraction patterns, whereas the thick TEM specimens evidenced two types of structure: (i) half-Micron sized grains separated from one another by 1–2 Microns on the support, although sometimes interconnected by single crystal platelets and (ii) 300 Å grapelike clumps of 100–200 Å crystals, each individually surrounded by a 50 Å non-crystalline coating. The latter structure may result from a post-formation oxidation process which expels carbon from the iron phase into grain boundaries.

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