scholarly journals Highly Efficient Nano-Porous Polysilicon Solar Absorption Films Prepared by Silver-Induced Etching

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 354
Author(s):  
Yeu-Long Jiang ◽  
Hsiao-Ku Shih

Nano-porous polysilicon high-temperature resistant solar absorption films were prepared by a thin layer of silver nanoparticles catalytic chemical etching. The polysilicon films with average tiny grain size of approximately 30 nm were obtained by high-temperature 800 °C furnace annealing of hydrogenated amorphous silicon films that were deposited on stainless substrate by plasma-enhanced chemical vapor deposition. The uniformly distributed 19 nm sized silver nanoparticles with 8 nm interspacing deposited on poly-Si film, were controlled by thin 4 nm thickness and very slow deposition rate 0.4 nm/min of thermal evaporation. Small silver nanoparticles with short spacing catalyzes the detouring etching process inducing the nano-porous textured surface with deep threaded pores. The etching follows the trail of the grain boundaries, and takes a highly curved thread like structure. The etching stops after reaching a depth of around 1100 nm, and the rest of the bulk thickness of the film remains mostly unaffected. The structure consists of three crystal orientations (111), (220), and (331) close to the surface. This crystalline nature diminishes gradually in the bulk of the film. High absorbance of 95% was obtained due to efficient light-trapping. Hence, preparation of nano-porous polysilicon films by this simple method can effectively increase solar absorption for the receiver of the solar thermal electricity Stirling Engine.

2014 ◽  
Vol 21 (03) ◽  
pp. 1450041 ◽  
Author(s):  
AHMED ZARROUG ◽  
LOTFI DERBALI ◽  
RACHID OUERTANI ◽  
WISSEM DIMASSI ◽  
HATEM EZZAOUIA

This paper investigates the combined effect of mechanical grooving and porous silicon (PS) on the front surface reflectance and the electronic properties of crystalline silicon substrates. Mechanical surface texturization leads to reduce the cell reflectance, enhance the light trapping and augment the carrier collection probability. PS was introduced as an efficient antireflective coating (ARC) onto the front surface of crystalline silicon solar cell. Micro-periodic V-shaped grooves were made by means of a micro-groove machining process prior to junction formation. Subsequently, wafers were subjected to an isotropic potassium hydroxide ( KOH ) etching so that the V-shape would be turned to a U-shape. We found that the successive treatment of silicon surfaces with stain-etching, grooving then alkaline etching enhances the absorption of the textured surface, and decreases the reflectance from 35% to 7% in the 300–1200 nm wavelength range. We obtained a significant increase in the overall light path that generates the building up of the light trapping inside the substrate. We found an improvement in the illuminated I–V characteristics and an increase in the minority carrier lifetime τeff. Such a simple method was adopted to effectively reinforce the overall device performance of crystalline silicon-based solar cells.


2021 ◽  
Author(s):  
Jianwei Ben ◽  
Jiangliu Luo ◽  
Zhichen Lin ◽  
Xiaojuan Sun ◽  
Xinke Liu ◽  
...  

Abstract To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.


2013 ◽  
Vol 785-786 ◽  
pp. 354-358
Author(s):  
Ya Biao Yu ◽  
Hui Xu ◽  
Xi Yu Ding ◽  
Ya Nan Sun

Silver nanowires in large quantities can be obtained by 5-hydroxy-L-tryptophan through a simple method in the absence of a surfactant and seed. The influences of different experimental parameters on the morphologies of silver nanoproducts in such an environmentally friendly synthesis were investigated. Different molar ratio of reactants which can results different size and shape of silver nanoparticles. The high temperature, the acid or alkaline condition is not to facilitate formation of the nanowires. This simple and eco-friendly preparation method of silver nanowires can decrease the synthetic cost and broaden the research and application areas of silver nanowires.


Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.


2002 ◽  
Vol 715 ◽  
Author(s):  
Wei Xu ◽  
P. C. Taylor

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.


2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.


2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


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