scholarly journals InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1364
Author(s):  
Ryan C. White ◽  
Hongjian Li ◽  
Michel Khoury ◽  
Cheyenne Lynsky ◽  
Michael Iza ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Chemical Vapor ◽  
Base Layer ◽  
Organic Chemical ◽  
Material System ◽  
Higher Power ◽  
Metal Organic ◽  
Atomic Probe ◽  
Organic Chemical Vapor Deposition

In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 μm2 microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.

scholarly journals Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940007 ◽  
Author(s):  
M. A. Mastro ◽  
J. K. Hite ◽  
C. R. Eddy ◽  
M. J. Tadjer ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Electronic Device ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Material System ◽  
Power Electronic ◽  
Large Area ◽  
Bulk Crystal Growth ◽  
Device Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Epitaxial Structures For Optical Information Processing Applications: Superlattice Infrared Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Moses T. Asom
Keyword(s):  
Information Processing ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Optical Information ◽  
Optical Information Processing ◽  
New Class ◽  
Metal Organic ◽  
Free Interfaces ◽  
Organic Chemical Vapor Deposition

ABSTRACTAdvances in epitaxial growth techniques such as molecular beam epitaxy and metal organic chemical vapor deposition have facilitated the formation of high quality III-V heterostructures with dimensional control down to atomic levels, with abrupt doping and near-defect-free interfaces. The flexibility and remarkable control offered by these techniques have resulted in the fabrication of new devices based on confinement or modulation of carriers in thin III-V heterostructures. Quantum wells and superlattice based devices are expected to be utilized in optical information processing as sources, modulators, and detectors. In this paper, we will review the general epitaxial requirements for quantum wells and superlattices based devices, and discuss the fabrication and properties of a new class of infrared photodetectors that employ intraband transitions in quantum wells.

Sign in / Sign up

Export Citation Format

Share Document