Epitaxial Structures For Optical Information Processing Applications: Superlattice Infrared Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Moses T. Asom
Keyword(s):  
Information Processing ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Optical Information ◽  
Optical Information Processing ◽  
New Class ◽  
Metal Organic ◽  
Free Interfaces ◽  
Organic Chemical Vapor Deposition

ABSTRACTAdvances in epitaxial growth techniques such as molecular beam epitaxy and metal organic chemical vapor deposition have facilitated the formation of high quality III-V heterostructures with dimensional control down to atomic levels, with abrupt doping and near-defect-free interfaces. The flexibility and remarkable control offered by these techniques have resulted in the fabrication of new devices based on confinement or modulation of carriers in thin III-V heterostructures. Quantum wells and superlattice based devices are expected to be utilized in optical information processing as sources, modulators, and detectors. In this paper, we will review the general epitaxial requirements for quantum wells and superlattices based devices, and discuss the fabrication and properties of a new class of infrared photodetectors that employ intraband transitions in quantum wells.

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

A Fetish for Gallium Arsenide

1995 ◽  
Vol 410 ◽  
Author(s):  
Andrew R. Barron
Keyword(s):  
Gallium Arsenide ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Organometallic Compounds ◽  
Organic Chemical ◽  
New Class ◽  
Metal Organic ◽  
Effect Transistor ◽  
Organic Chemical Vapor Deposition ◽  
Insulating Properties

ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [(tBu)GaS]4, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as a the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).

Intersubband Transitions in GaN/AlxGa1-xN Multi Quantum Wells

2004 ◽  
Vol 829 ◽  
Author(s):  
E. A. DeCuir ◽  
Y. C. Chua ◽  
B. S. Passmore ◽  
J. Liang ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Charge Carriers ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Metal Organic ◽  
Si Doped ◽  
Organic Chemical Vapor Deposition ◽  
Absorption Technique

ABSTRACTIntersubband transitions (ISTs) in GaN/AlxGa1-xN multiple quantum wells (MQWs) were investigated using an optical absorption technique. Several samples were grown by either Molecular Beam Epitaxy (MBE) or Metal-Organic Chemical Vapor Deposition (MOCVD) and were investigated using both normal incident and waveguide configurations. The waveguides were fabricated by dicing each sample into 2 mm wide by 5 mm long pieces with two facets polished at 45 degrees with respect to the surface such that light propagates across the sample's width. Preliminary results indicate that ISTs are observable in Si-doped and undoped GaN/AlxGa1-xN MQWs. The source of these charge carriers in the undoped samples are explained as being due to the spontaneous polarization effect which exists at the GaN/AlxGa1-xN interfaces where the GaN surface has Ga-polarity. Scanning Electron Microscopy indicates that a sample containing what appeared to be a large number of cracks and or hexagonal voids lacked the presence of ISTs.

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

RSC Advances ◽  
2015 ◽  
Vol 5 (92) ◽  
pp. 75211-75217 ◽  
Author(s):  
Hailiang Dong ◽  
Jing Sun ◽  
Shufang Ma ◽  
Jian Liang ◽  
Bingshe Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Photoelectric Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Indium Diffusion

InGaAs/GaAsP MQWs grown by metal–organic chemical vapor deposition at different growth temperatures generated an indium diffusion zone (InGaAsP) between InGaAs and GaAsP.

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