scholarly journals Calcium Tungstate Doped with Rare Earth Ions Synthesized at Low Temperatures for Photoactive Composite and Anti-Counterfeiting Applications

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1214
Author(s):  
Soung-Soo Yi ◽  
Jae-Yong Jung

A precursor was prepared using a co-precipitation method to synthesize crystalline calcium tungstate. The prepared precursor was dried in an oven at 80 °C for 18 h. The dried powders, prepared without a heat treatment process, were observed in XRD analysis to be a crystalline CaWO4 phase, confirming that the synthesis of crystalline CaWO4 is possible even at low temperature. To use this crystalline CaWO4 as a light emitting material, rare earth ions were added when preparing the precursor. The CaWO4 powders doped with terbium (Tb3+) and europium (Eu3+) ions, respectively, were also observed to be crystalline in XRD analysis. The luminescence of the undoped CaWO4 sample exhibited a wide range of 300 ~ 600 nm and blue emission with a central peak of 420 nm. The Tb3+-doped sample showed green light emission at 488, 545, 585, and 620 nm, and the Eu3+-doped sample showed red light emission at 592, 614, 651, and 699 nm. Blue, green, and red CaWO4 powders with various luminescence properties were mixed with glass powder and heat-treated at 600 °C to fabricate a blue luminescent PiG disk. In addition, a flexible green and red light-emitting composite was prepared by mixing it with a silicone-based polymer. An anti-counterfeiting application was prepared by using the phosphor in an ink, which could not be identified with the naked eye but can be identified under UV light.

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3717
Author(s):  
Jae-Young Jung ◽  
Soung-Soo Yi ◽  
Dong-Hyun Hwang ◽  
Chang-Sik Son

The precursor prepared by co-precipitation method was sintered at various temperatures to synthesize crystalline manganese tungstate (MnWO4). Sintered MnWO4 showed the best crystallinity at a sintering temperature of 800 °C. Rare earth ion (Dysprosium; Dy3+) was added when preparing the precursor to enhance the magnetic and luminescent properties of crystalline MnWO4 based on these sintering temperature conditions. As the amount of rare earth ions was changed, the magnetic and luminescent characteristics were enhanced; however, after 0.1 mol.%, the luminescent characteristics decreased due to the concentration quenching phenomenon. In addition, a composite was prepared by mixing MnWO4 powder, with enhanced magnetism and luminescence properties due to the addition of dysprosium, with epoxy. To one of the two prepared composites a magnetic field was applied to induce alignment of the MnWO4 particles. Aligned particles showed stronger luminescence than the composite sample prepared with unsorted particles. As a result of this, it was suggested that it can be used as phosphor and a photosensitizer by utilizing the magnetic and luminescent properties of the synthesized MnWO4 powder with the addition of rare earth ions.


2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.


1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.


ChemInform ◽  
2009 ◽  
Vol 40 (5) ◽  
Author(s):  
Daqin Chen ◽  
Yuansheng Wang ◽  
Yunlong Yu ◽  
Ping Huang ◽  
Fangyi Weng

Open Physics ◽  
2011 ◽  
Vol 9 (4) ◽  
Author(s):  
Junli Huang ◽  
Liya Zhou ◽  
Yuwei Lan ◽  
Fuzhong Gong ◽  
Qunliang Li ◽  
...  

AbstractEu3+-doped CaZrO3 phosphor with perovskite-type structure was synthesized by the high temperature solid-state method. The samples were characterized by X-ray diffraction, scanning electron microscopy, fluorescence spectrophotometer and UV-vis spectrophotometer, respectively. XRD analysis showed that the formation of CaZrO3 was at the calcinations temperature of 1400°C. The average diameter of CaZrO3 with 4 mol% doped-Eu3+ was 2µm. The PL spectra demonstrated that CaZrO3:Eu3+ phosphor could be excited effectively in the near ultraviolet light region (397 nm) and emitted strong red-emission lines at 616 nm corresponding to the forced electric dipole 5 D 0 → 7 F 2 transitions of Eu3+. Meanwhile, the light-emitting diode was fabricated with the Ca0.96ZrO3:Eu0.043+ phosphor, which can efficiently absorb ∼ 400 nm irradiation and emit red light. Therefore Ca0.96ZrO3:Eu0.043+ may have applications for a near ultraviolet InGaN chip-based white light-emitting diode.


2018 ◽  
Vol 47 (11) ◽  
pp. 3811-3818 ◽  
Author(s):  
Jinyang Zhu ◽  
Xue Bai ◽  
Xu Chen ◽  
Zhifeng Xie ◽  
Yongsheng Zhu ◽  
...  

Carbon dots with efficient solid-state red-light emission through step-by-step surface modification.


MRS Advances ◽  
2019 ◽  
Vol 4 (33-34) ◽  
pp. 1895-1904
Author(s):  
Lihong Su ◽  
Kan Chen ◽  
Yongqiang Liu ◽  
ZiAo Zou ◽  
Lihua Su

Abstract:Ultraviolet light-emitting diodes (UVLEDs) with phosphor materials have considerable advantages over traditional illumination devices. Doping with rare earth ions can modify the optical spectrum of phosphor materials, but rare earths are very expensive. Thus, replacing rare earths with a common material would provide a great potential for the wide application in the future. In this study, we discovered that a novel type of semiconductor nanometre powder, namely manganese cobalt nickel copper oxide (MCNC), is able to emit blue-green wavelength spectrum when exited by 365-400nmUVLED. In addition, MCNC shows less attenuation of luminescence efficiency than other UVLED phosphor materials doped with rare earths with temperature increase. It is thus concluded that MCNC is a promising low-cost material to replace rare earths to adjust the optical spectrum wavelength of UVLED. This is the first time that nano-scale MCNC is reported to possess the property to change the optical spectrum wavelength of UVLED. This provides a new mechanical and nanometer phosphor material without rare earth doping to shift the wavelength spectrum.


2018 ◽  
Vol 8 (9) ◽  
pp. 2643 ◽  
Author(s):  
Yangyi Zhang ◽  
Jingjing Liu ◽  
Yang Ji ◽  
Dongke Li ◽  
Jun Xu ◽  
...  

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