scholarly journals Properties of Barium Cerate-Zirconate Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1005 ◽  
Author(s):  
Piotr Winiarz ◽  
Monica Susana Campos Covarrubias ◽  
Mantas Sriubas ◽  
Kristina Bockute ◽  
Tadeusz Miruszewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Deposition ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Aerosol Deposition ◽  
Total Conductivity ◽  
Barium Cerate ◽  
Layer Deposition ◽  
Interface Layers

In this work, we review several experimental results showing the electrical properties of barium cerate-zirconate thin films and discuss them in view of the possible influence of various factors on their properties. Most of the presented Ba(Ce, Zr, Y)O3 thin films were formed by the pulsed laser deposition (PLD) technique, however thin films prepared using other methods, like RF magnetron sputtering, electron-beam deposition, powder aerosol deposition (PAD), atomic layer deposition (ALD) and spray deposition are also reported. The electrical properties of the thin films strongly depend on the film microstructure. The influence of the interface layers, space-charge layers, and strain-modified layers on the total conductivity is also essential but in many cases is weaker.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 14 (10) ◽  
pp. G45 ◽  
Author(s):  
C. J. Yim ◽  
S. U. Kim ◽  
Y. S. Kang ◽  
M.-H. Cho ◽  
D.-H. Ko
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

Sign in / Sign up

Export Citation Format

Share Document