scholarly journals Analyses of Substrate-Dependent Broadband Microwave (1–40 GHz) Dielectric Properties of Pulsed Laser Deposited Ba0.5Sr0.5TiO3 Films

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 852
Author(s):  
Sandwip K. Dey ◽  
Sudheendran Kooriyattil ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar ◽  
Guru Subramanyam
Keyword(s):  
Dielectric Properties ◽  
Single Crystal ◽  
Coplanar Waveguide ◽  
Pulsed Laser ◽  
High Energy ◽  
Defect Parameter ◽  
Inhomogeneous Strain ◽  
Microstructural Effects ◽  
Out Of Plane ◽  
Waveguide Transmission

Ba0.5Sr0.5TiO3 (BST-0.5) thin films (600 nm) were deposited on single crystal MgO, SrTiO3 (STO), and LaAlO3 (LAO) substrates by pulsed laser deposition at an oxygen partial pressure of 80 mTorr and temperature of 720 °C. X-ray diffraction and in situ reflection high-energy electron diffraction routinely ascertained the epitaxial quality of the (100)-oriented nanocrystalline films. The broadband microwave (1–40 GHz) dielectric properties were measured using coplanar waveguide transmission line test structures. The out-of-plane relative permittivity exhibited strong substrate-dependent dielectric (relaxation) dispersions with their attendant peaks in loss tangent (tanδ), with the former dropping sharply from tens of thousands to ~1000 by 10 GHz. Although homogeneous in-plane strain , enhances with at lower frequencies, two crossover points at 8.6 GHz and 18 GHz eventually change the trend to: . The dispersions are qualitatively interpreted using (a) theoretically calculated (T)- phase diagram for single crystal and single domain BST-0.5 film, (b) theoretically predicted -dependent, anomaly that does not account for frequency dependence, and (c) literature reports on intrinsic and extrinsic microstructural effects, including defects-induced inhomogeneous strain and strain gradients. From the Vendik and Zubko model, the defect parameter metric, , was estimated to be 0.51 at 40 GHz for BST-0.5 film on STO.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Experiments on REM and SREM using a Tem/Stem Microscope with a Configurable Angle-Resolving Detector

1990 ◽  
Vol 48 (1) ◽  
pp. 338-339
Author(s):  
H. Banzhof ◽  
I. Daberkow
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Crystal Surface ◽  
High Energy ◽  
Contrast Effects ◽  
Atomic Steps ◽  
Single Crystal Surfaces ◽  
Platinum Single Crystal ◽  
Reflection Electron Microscopy ◽  
Beam Reflection

A Philips EM 420 electron microscope equipped with a field emission gun and an external STEM unit was used to compare images of single crystal surfaces taken by conventional reflection electron microscopy (REM) and scanning reflection electron microscopy (SREM). In addition an angle-resolving detector system developed by Daberkow and Herrmann was used to record SREM images with the detector shape adjusted to different details of the convergent beam reflection high energy electron diffraction (CBRHEED) pattern.Platinum single crystal spheres with smooth facets, prepared by melting a thin Pt wire in an oxyhydrogen flame, served as objects. Fig. 1 gives a conventional REM image of a (111)Pt single crystal surface, while Fig. 2 shows a SREM record of the same area. Both images were taken with the (555) reflection near the azimuth. A comparison shows that the contrast effects of atomic steps are similar for both techniques, although the depth of focus of the SREM image is reduced as a result of the large illuminating aperture. But differences are observed at the lengthened images of small depressions and protrusions formed by atomic steps, which give a symmetrical contrast profile in the REM image, while an asymmetric black-white contrast is observed in the SREM micrograph. Furthermore the irregular structures which may be seen in the middle of Fig. 2 are not visible in the REM image, although it was taken after the SREM record.

Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide

1999 ◽  
Vol 35 (22) ◽  
pp. 1957 ◽  
Author(s):  
G. Ternent ◽  
S. Ferguson ◽  
Z. Borsosfoldi ◽  
K. Elgaid ◽  
T. Lohdi ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Coplanar Waveguide ◽  
High Q ◽  
Grade Silicon ◽  
Waveguide Transmission

scholarly journals Non-linear Terahertz driving of plasma waves in layered cuprates

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Francesco Gabriele ◽  
Mattia Udina ◽  
Lara Benfatto
Keyword(s):  
Low Frequency ◽  
Plasma Waves ◽  
Meissner Effect ◽  
High Energy ◽  
Plasma Mode ◽  
Light Pulses ◽  
High Frequency Plasma ◽  
Non Linear ◽  
Out Of Plane ◽  
Layered Cuprates

AbstractThe hallmark of superconductivity is the rigidity of the quantum-mechanical phase of electrons, responsible for superfluid behavior and Meissner effect. The strength of the phase stiffness is set by the Josephson coupling, which is strongly anisotropic in layered cuprates. So far, THz light pulses have been used to achieve non-linear control of the out-of-plane Josephson plasma mode, whose frequency lies in the THz range. However, the high-energy in-plane plasma mode has been considered insensitive to THz pumping. Here, we show that THz driving of both low-frequency and high-frequency plasma waves is possible via a general two-plasmon excitation mechanism. The anisotropy of the Josephson couplings leads to markedly different thermal effects for the out-of-plane and in-plane response, linking in both cases the emergence of non-linear photonics across Tc to the superfluid stiffness. Our results show that THz light pulses represent a preferential knob to selectively drive phase excitations in unconventional superconductors.

scholarly journals Experimental signatures of nodeless multiband superconductivity in a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ single crystal

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chanhee Kim ◽  
Dilip Bhoi ◽  
Yeahan Sur ◽  
Byung-Gu Jeon ◽  
Dirk Wulferding ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Zero Magnetic Field ◽  
Anisotropy Ratio ◽  
Strong Temperature Dependence ◽  
Critical Fields ◽  
Band Theory ◽  
Plane Field ◽  
Low Field ◽  
Out Of Plane

AbstractIn order to understand the superconducting gap nature of a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 single crystal with $$T_{c} = 3.13 \text { K}$$ T c = 3.13 K , in-plane thermal conductivity $$\kappa $$ κ , in-plane London penetration depth $$\lambda _{\text {L}}$$ λ L , and the upper critical fields $$H_{c2}$$ H c 2 have been investigated. At zero magnetic field, it is found that no residual linear term $$\kappa _{0}/T$$ κ 0 / T exists and $$\lambda _{\text {L}}$$ λ L follows a power-law $$T^n$$ T n (T: temperature) with n = 2.66 at $$T \le \frac{1}{3}T_c$$ T ≤ 1 3 T c , supporting nodeless superconductivity. Moreover, the magnetic-field dependence of $$\kappa _{0}$$ κ 0 /T clearly shows a shoulder-like feature at a low field region. The temperature dependent $$H_{c2}$$ H c 2 curves for both in-plane and out-of-plane field directions exhibit clear upward curvatures near $$T_c$$ T c , consistent with the shape predicted by the two-band theory and the anisotropy ratio between the $$H_{c2}$$ H c 2 (T) curves exhibits strong temperature-dependence. All these results coherently suggest that $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 is a nodeless, multiband superconductor.

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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