scholarly journals Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1091
Author(s):  
Siva Pratap Reddy Mallem ◽  
Woo-Hyun Ahn ◽  
Jung-Hee Lee ◽  
Ki-Sik Im
Keyword(s):  
Ohmic Contact ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Ohmic Contacts ◽  
Hole Concentration ◽  
Xrd Analysis ◽  
Specific Contact Resistance ◽  
Root Mean Square Roughness ◽  
X Ray ◽  
Ohmic Resistance

In this study, a PdAl (20 nm)/Au (30 nm) metal stack scheme is used for forming low-ohmic-resistance contact on Mg-doped (1.5 × 1017 cm−3) p-type AlGaN at various annealing temperatures. Using a circular-transmission line model, the specific contact resistance (ρc) of PdAl/Au/p-AlGaN ohmic contact is determined via the current–voltage (I–V) characteristics. As-deposited contacts demonstrate non-linear behavior. However, the contact exhibits linear I–V characteristics with excellent ohmic contact of ρc = 1.74 × 10−4Ωcm2, when annealed at 600 °C for 1 min in a N2 atmosphere. The Ga and Al vacancies created at the PdAl/Au and p-AlGaN interfaces, which act as acceptors to increase the hole concentration at the interface. The out-diffusion of Ga as well as in-diffusion of Pd and Au to form interfacial chemical reactions at the interface is observed by X-ray photoelectron spectroscopy (XPS) measurements. The phases of the Ga–Pd and Ga–Au phases are detected by X-ray diffraction (XRD) analysis. Morphological results show that the surface of the contact is reasonably smooth with the root-mean-square roughness of 2.89 nm despite annealing at 600 °C. Based on the above experimental considerations, PdAl/Au/p-AlGaN contact annealed at 600 °C is a suitable p-ohmic contact for the development of high-performance electronic devices.

Nonalloyed Ohmic Contacts to N-Si Using a Strained Si0.5Ge0.5 Buffer Layer

1993 ◽  
Vol 320 ◽  
Author(s):  
Hsing-Kuen Liou ◽  
Edward S. Yang ◽  
K. N. Tu
Keyword(s):  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Depth Profiling ◽  
Binding Energies ◽  
Specific Contact Resistance ◽  
Strained Si ◽  
X Ray ◽  
Ohmic Behavior ◽  
Specific Contact

ABSTRACTNonalloyed shallow ohmic contacts to n-Si have been fabricated by using an 80 Å thick strained Si0.5Ge0.5 buffer layer grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core level binding energies of the strained and the relaxed Si0.5Ge0.5 and to determine their relative Fermi level positions. It was found that the surfaces of strained Si0.5Ge0.5 exhibit pinning very close to the conduction band. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W or Pt as contact metals. In the case of Pt, a 500 Å W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the Pt/W/Si0.5Ge0.5/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5x10-5 Ω·cm2.

Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN

2008 ◽  
Vol 1108 ◽  
Author(s):  
Indra Chary ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Yuriy Kudryavtsev ◽  
R Asomoza ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Hole Concentration ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Bilayer Thickness ◽  
Aluminum Oxides ◽  
Mg Doping ◽  
Specific Contact

AbstractWe report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest ρc of ˜9.2 x 10-6 Ω cm2, when GaN was treated in HCl:H2O (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 0% O2 atmosphere. Similar procedure applied on p-AlxGa1-xN (x = 5-7%), with a hole concentration of 2.3 x 1017 cm-3, yields a ρc of 1.8 x 10-4 Ω cm2. An increase is observed in ρc when Mg doping exceeds 4 x 1019 cm-3 in both p-GaN and p-AlGaN. This is attributed to Mg self compensation. This increase is more pronounced in AlGaN which we attribute to the presence of residual native aluminum oxides.

scholarly journals Effect of Time on a Hierarchical Corn Skeleton-Like Composite of CoO@ZnO as Capacitive Electrode Material for High Specific Performance Supercapacitors

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3285 ◽  
Author(s):  
Yedluri Kumar ◽  
Hee-Je Kim
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Xrd Analysis ◽  
Cycling Performance ◽  
Energy Storage Devices ◽  
Tem Analysis ◽  
X Ray ◽  
Potential Applications ◽  
Oxygen Groups

CoO–ZnO-based composites have attracted considerable attention for the development of energy storage devices because of their multifunctional characterization and ease of integration with existing components. This paper reports the synthesis of CoO@ZnO (CZ) nanostructures on Ni foam by the chemical bath deposition (CBD) method for facile and eco-friendly supercapacitor applications. The formation of a CoO@ZnO electrode functioned with cobalt, zinc, nickel and oxygen groups was confirmed by X-ray diffraction (XRD) analysis, X-ray photoelectron spectroscopy (XPS), low and high-resolution scanning electron microscopy (SEM), and transmission electron microscopy (TEM) analysis. The as-synthesized hierarchical nanocorn skeleton-like structure of a CoO@ZnO-3h (CZ3h) electrode delivered a higher specific capacitance (Cs) of 1136 F/g at 3 A/g with outstanding cycling performance, showing 98.3% capacitance retention over 3000 cycles in an aqueous 2 M KOH electrolyte solution. This retention was significantly better than that of other prepared electrodes, such as CoO, ZnO, CoO@ZnO-1h (CZ1h), and CoO@ZnO-7h (CZ7h) (274 F/g, 383 F/g, 240 F/g and 537 F/g). This outstanding performance was attributed to the excellent surface morphology of CZ3h, which is responsible for the rapid electron/ion transfer between the electrolyte and the electrode surface area. The enhanced features of the CZ3h electrode highlight potential applications in high performance supercapacitors, solar cells, photocatalysis, and electrocatalysis.

scholarly journals Novel Carbon Dots Derived from Glycyrrhizae Radix et Rhizoma and Their Anti-Gastric Ulcer Effect

Molecules ◽  
2021 ◽  
Vol 26 (6) ◽  
pp. 1512
Author(s):  
Yuhan Liu ◽  
Meiling Zhang ◽  
Jinjun Cheng ◽  
Yue Zhang ◽  
Hui Kong ◽  
...  
Keyword(s):  
Gastric Ulcer ◽  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
High Performance ◽  
Raw264.7 Cells ◽  
Mice Model ◽  
X Ray ◽  
Glycyrrhizae Radix ◽  
Transmission Electron ◽  
High Resolution Tem

Glycyrrhizae Radix et Rhizoma (GRR) is one of the commonly used traditional Chinese medicines in clinical practice, which has been applied to treat digestive system diseases for hundreds of years. GRR is preferred for anti-gastric ulcer, however, the main active compounds are still unknown. In this study, GRR was used as precursor to synthesize carbon dots (CDs) by a environment-friendly one-step pyrolysis process. GRR-CDs were characterized by using transmission electron microscopy, high-resolution TEM, fourier transform infrared, ultraviolet-visible and fluorescence spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and high-performance liquid chromatography. In addition, cellular toxicity of GRR-CDs was studied by using CCK-8 in RAW264.7 cells, and the anti-gastric ulcer activity was evaluated and confirmed using mice model of acute alcoholic gastric ulcer. The experiment confirmed that GRR-CDs were the spherical structure with a large number of active groups on the surface and their particle size ranged from 2 to 10 nm. GRR-CDs had no toxicity to RAW264.7 cells at concentration of 19.5 to 5000 μg/mL and could reduce the oxidative damage of gastric mucosa and tissues caused by alcohol, as demonstrated by restoring expression of malondialdehyde, superoxide dismutase and nitric oxide in serum and tissue of mice. The results indicated the explicit anti-ulcer activity of GRR-CDs, which provided a new insights for the research on effective material basis of GRR.

scholarly journals An Insight into Chemistry and Structure of Colloidal 2D-WS2 Nanoflakes: Combined XPS and XRD Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1969
Author(s):  
Riccardo Scarfiello ◽  
Elisabetta Mazzotta ◽  
Davide Altamura ◽  
Concetta Nobile ◽  
Rosanna Mastria ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Crystal Habit ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Morphological Evaluation ◽  
Rational Understanding ◽  
Structural Inspection

The surface and structural characterization techniques of three atom-thick bi-dimensional 2D-WS2 colloidal nanocrystals cross the limit of bulk investigation, offering the possibility of simultaneous phase identification, structural-to-morphological evaluation, and surface chemical description. In the present study, we report a rational understanding based on X-ray photoelectron spectroscopy (XPS) and structural inspection of two kinds of dimensionally controllable 2D-WS2 colloidal nanoflakes (NFLs) generated with a surfactant assisted non-hydrolytic route. The qualitative and quantitative determination of 1T’ and 2H phases based on W 4f XPS signal components, together with the presence of two kinds of sulfur ions, S22− and S2−, based on S 2p signal and related to the formation of WS2 and WOxSy in a mixed oxygen-sulfur environment, are carefully reported and discussed for both nanocrystals breeds. The XPS results are used as an input for detailed X-ray Diffraction (XRD) analysis allowing for a clear discrimination of NFLs crystal habit, and an estimation of the exact number of atomic monolayers composing the 2D-WS2 nanocrystalline samples.

Use of anti-solvent to enhance thermoelectric response of hybrid-halide perovskite thin films

2022 ◽  
Author(s):  
Shrikant SAINI ◽  
Izuki Matsumoto ◽  
Sakura Kishishita ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Cost Effective ◽  
Performance Tuning ◽  
Charge Carrier Density ◽  
X Ray ◽  
Thermoelectric Energy Harvesting ◽  
Halide Perovskite

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

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