scholarly journals Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 318 ◽  
Author(s):  
Xiaoyang Chen ◽  
Taolan Mo ◽  
Binbin Huang ◽  
Yun Liu ◽  
Ping Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Breakdown Strength ◽  
Rf Magnetron Sputtering ◽  
Capacitance Density ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Low Leakage ◽  
Low Leakage Current

Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
B. Ea-Kim ◽  
F. Varniere ◽  
M. C. Hugon ◽  
B. Agius ◽  
R. Bisaro ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Heating Rates ◽  
Tem Analysis ◽  
Low Leakage ◽  
Annealing Conditions ◽  
Low Leakage Current ◽  
Process Studies

AbstractThe electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

Effect of Surface Morphology of NiCr-Bottom Electrode on Preparation of Ferroelectric PZT Thin Film Capacitor

1996 ◽  
Vol 433 ◽  
Author(s):  
K.B. Lee ◽  
B.R. Rhee ◽  
S.K. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Capacitor ◽  
Spin Casting ◽  
Thin Film Capacitor ◽  
Atomic Force ◽  
Pzt Thin Film

AbstractWe have studied the optimum conditions of the deposition of NiCr-bottom electrode for preparing the ferroelectric PZT(50/50) thin film capacitor. The NiCr(80/20) layer of about 300nm in thickness was deposited on bare Si(111) wafer by rf magnetron sputtering. The surface morphology and crystallinity were investigated by using Atomic force microscope (AFM) and X-ray diffractormeter (XRD). It is found that the size and crystallinity of grains of NiCr or Ni-silicide depend mainly on the rf power. The PZT(50/50) thin films were prepared on NiCr/Si substates by spin-casting of PZT coating sol and then annealing at 520°C in air for crystallization. The undesirable Pb-silicate is found to be grown during post-annealing in case that substrates having NiCr layer deposited by high power above 80 W are used. We suggest that the formation of Pb-silicate is due to the thermal diffusion of Pb or PbO through crystalline NiCr-grain boundaries. The ferroelectric PZT thin films having the perovskite structure can be obtained by using the NiCr-bottom electrodes whose morphologies are in the amorphous-crystalline boundaries, in which the surface roughness and grain size of NiCr layer is minimum. The values of the dielectric constant, εn, were measured in the range 300˜500, the remanent polarization, Pr, in the range 10˜13 C/cm2 and the coercive field, Ec, around 160 kV/cm, depending on the deposition conditions of NiCr layers.

PROPERTIES OF ALL-SOLID-STATE LITHIUM-ION RECHARGEABLE BATTERIES DEPOSITED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Coulombic Efficiency ◽  
Electronic Conductivity ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Rechargeable Batteries ◽  
Voltage Range

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

scholarly journals Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Specific Capacity ◽  
Rf Magnetron Sputtering ◽  
Open Circuit ◽  
Working Pressure ◽  
Thin Film Battery ◽  
A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

2011 ◽  
Vol 1288 ◽  
Author(s):  
Rashmi Menon ◽  
K. Sreenivas ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface States ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 352-357
Author(s):  
S.Y. Jaffar ◽  
Yussof Wahab ◽  
Rosnita Muhammad ◽  
Z. Othaman ◽  
Zuhairi Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Ysz Thin Film ◽  
Temperature Rate ◽  
Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

scholarly journals The Effect of Oxygen Mixing Percentage on Structural, Optical and Electrical Properties of ZnTiO3 Thin-films Grown by Rf Magnetron Sputtering.

2021 ◽  
Author(s):  
srinivasa varaprsad H ◽  
sridevi P. V ◽  
Satya Anuradha M ◽  
Srinivas Pattipaka ◽  
pamu D
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Thermionic Emission ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Atomic Force ◽  
Excitation Coefficient ◽  
Effect Of Oxygen

Abstract Perovskites are important composites in the area of multidisciplinary applications. It is achieved by carefully choosing and tuning the properties of the thin-film at the deposition. In this paper, ZnTiO3 (ZTO) thin-films were being deposited on quartz and N-Si substrates by RF magnetron sputtering. The thin-films were developed at room temperature, oxygen percentage levels varying from 0 to 100, and annealed at 600oC. The electrical, optical, morphological, and structural properties were analyzed as a function of oxygen mixing percentage (OMP). The crystallinity of the cubic structured ZTO thin-film is found to be high at 25 OMP, and it is gradually decreased with increased OMP. The surface morphology of the thin-film is observed, and roughness is measured from the atomic force microscope. Raman Spectroscopy investigated the phase formation and the vibrational modes of the thin-film with their spectral de-convolution. The ZTO thin-films optical properties were investigated using transmittance spectra. The ZTO thin-film indicated the highest refractive index of 2.46, at 633nm with optical bandgap values of 3.57 eV, with a thickness of 145nm and 25 OMP. The refractive index, thin-film thickness, and excitation coefficient were analyzed using the Swanepoel envelope technique. Electrical characteristics of ZTO thin-film are measured from the optimized conditions of the thin-film with conventional thermionic emission (TE) technique.

Sign in / Sign up

Export Citation Format

Share Document