scholarly journals Hardening and Creep of Ion Irradiated CLAM Steel by Nanoindentation

Crystals ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 44 ◽  
Author(s):  
Ying Liu ◽  
Wenbin Liu ◽  
Long Yu ◽  
Lirong Chen ◽  
Haonan Sui ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Primary Creep ◽  
Steady State Creep ◽  
Indentation Creep ◽  
Metallic Materials ◽  
Irradiation Hardening ◽  
Clam Steel ◽  
Large Numbers ◽  
Induced Defects ◽  
Irradiation Induced Defects

Ion irradiation, combined with nanoindentation, has long been recognized as an effective way to study effects of irradiation on the mechanical properties of metallic materials. In this research, hardening and creep of ion irradiated Chinese low activation martensitic (CLAM) steel are investigated by nanoindentation. Firstly, it is demonstrated that ion irradiation results in the increase of hardness, because irradiation-induced defects impede the glide of dislocations. Secondly, the unirradiated CLAM steel shows indentation creep size effect (ICSE) that the indentation creep strain decreases with the applied load, and ICSE is found to be associated with the variations of geometrical necessary dislocations (GNDs) density. However, ion irradiation results in the alleviation of ICSE due to the irradiation hardening. Thirdly, ion irradiation accelerates nanoindentation creep due to the large numbers of irradiation-induced vacancies whose diffusion controls creep deformation. Meanwhile, owing to the annihilation of vacancies, ion irradiation has a significant influence on the primary creep while only negligible influence has been observed for the steady-state creep.

Transmission Electron Microscopy Observation of 11MEV B5+ Ion Irradiation in Bi2Sr2CaCu2O7-x Single Crystal

1999 ◽  
Vol 5 (S2) ◽  
pp. 758-759
Author(s):  
W.L. Zhou ◽  
Y. Sasaki ◽  
Y. Ikuhara ◽  
C.J.O’Connor
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Target Material ◽  
Heavy Ion ◽  
Zone Melting ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Different Types ◽  
Induced Defects ◽  
Irradiation Induced Defects

Artificial defects generated by ion irradiation have been considered an efficient method to enhance the critical current density in superconducting materials. The mechanism of producing defects as flux pining centers is still an important issue since the efficiency of irradiation-induced defects in flux pinning strongly depends on their microstructures. Different types of defects have been found in heavy ion irradiation. However, there are few results that show light ion irradiation due to the target material selected, the type of light ion and energy, and the incident ion angle. Another factor is the difficulty of cross-sectional sample preparation. In this paper, a single crystal Bi2Sr2CaCu2O7-x with 11 MeV B5+ ion irradiation was observed by transmission electron microscope (TEM) from both plan and cross-sectional view.The Bi2Sr2CaCu2O7-x single crystals used for ion irradiation were prepared using the floating-zone melting method. The crystals were cleaved into thin sheets of about 20 μm thickness along the a-b plane and cut to about 2mmx2mm size.

A photoelectron spectroscopy study of ion-irradiation induced defects in single-wall carbon nanotubes

Carbon ◽  
2007 ◽  
Vol 45 (14) ◽  
pp. 2744-2750 ◽  
Author(s):  
Amit K. Chakraborty ◽  
R.A.J. Woolley ◽  
Yu.V. Butenko ◽  
V.R. Dhanak ◽  
L. Šiller ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Photoelectron Spectroscopy ◽  
Ion Irradiation ◽  
Single Wall Carbon Nanotubes ◽  
Spectroscopy Study ◽  
Single Wall Carbon ◽  
Induced Defects ◽  
Irradiation Induced Defects

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Reverse martensitic phase transformation induced in Nb–Co multilayers by ion irradiation

1994 ◽  
Vol 9 (2) ◽  
pp. 357-361 ◽  
Author(s):  
B.X. Liu ◽  
Z.J. Zhang
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Solid State ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Martensitic Phase ◽  
Martensitic Phase Transformation ◽  
Step Transition ◽  
Induced Defects ◽  
Irradiation Induced Defects

A reverse martensitic phase transformation was observed in Nb-enriched Nb-Co multilayers induced by room temperature 200 ke V xenon ion mixing. Further experiments revealed that this bcc-fcc transition proceeds in two steps, i.e., bcc-hcp and hcp-fcc. A crystallographic model is proposed to explain the two-step transition through shearing and sliding, which are mediated by irradiation-induced defects and strain in the films. In addition, the existence of the hcp and fcc metastable states in the Nb-Co system was confirmed by high-temperature solid state interdiffusion of the corresponding multilayers.

scholarly journals Fast recovery of ion-irradiation-induced defects in Ge₂Sb₂Te₅ thin films at room temperature

2021 ◽  
Author(s):  
Martin Hafermann ◽  
Robin Schock ◽  
Chenghao Wan ◽  
Jura Rensberg ◽  
Mikhail Kats ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Fast Recovery ◽  
Induced Defects ◽  
Irradiation Induced Defects

Effects of Ion Irradiation on Supported Carbon Nanotubes and Nanotube-Substrate Interfaces

2001 ◽  
Vol 706 ◽  
Author(s):  
A. V. Krasheninnikov ◽  
K. Nordlund ◽  
J. Keinonen
Keyword(s):  
Carbon Nanotubes ◽  
Ion Irradiation ◽  
Heavy Atom ◽  
Light Atom ◽  
Defect Production ◽  
Defect Migration ◽  
Metal Atoms ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Carbon Network

AbstractWe employ molecular dynamics to study the effects of ion irradiation on carbon nanotubes lying on different substrates. We show that defect production depends on the type of the substrate and that the damage is higher for metallic heavy-atom substrates than for light-atom substrates, since in the former case sputtered metal atoms and backscattered recoils produce extra damage in the nanotube. We further study the behavior of defects and demonstrate that although ions may severely damage nanotubes in a local region, the nanotube carbon network can heal such a strong localized damage due to defect migration and dangling bond saturation. Finally, we predict the pinning of nanotubes to substrates by forming nanotube-substrate bonds which appear near irradiation-induced defects.

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