scholarly journals Fast recovery of ion-irradiation-induced defects in Ge₂Sb₂Te₅ thin films at room temperature

2021 ◽  
Author(s):  
Martin Hafermann ◽  
Robin Schock ◽  
Chenghao Wan ◽  
Jura Rensberg ◽  
Mikhail Kats ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Fast Recovery ◽  
Induced Defects ◽  
Irradiation Induced Defects

Reverse martensitic phase transformation induced in Nb–Co multilayers by ion irradiation

1994 ◽  
Vol 9 (2) ◽  
pp. 357-361 ◽  
Author(s):  
B.X. Liu ◽  
Z.J. Zhang
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Solid State ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Martensitic Phase ◽  
Martensitic Phase Transformation ◽  
Step Transition ◽  
Induced Defects ◽  
Irradiation Induced Defects

A reverse martensitic phase transformation was observed in Nb-enriched Nb-Co multilayers induced by room temperature 200 ke V xenon ion mixing. Further experiments revealed that this bcc-fcc transition proceeds in two steps, i.e., bcc-hcp and hcp-fcc. A crystallographic model is proposed to explain the two-step transition through shearing and sliding, which are mediated by irradiation-induced defects and strain in the films. In addition, the existence of the hcp and fcc metastable states in the Nb-Co system was confirmed by high-temperature solid state interdiffusion of the corresponding multilayers.

PALS and TEM Study on Irradiation Defects of 12Cr-ODS Steels Induced by He/H Ions

2017 ◽  
Vol 373 ◽  
pp. 96-99 ◽  
Author(s):  
Lu Hui Han ◽  
Tao Fa ◽  
Ya Wen Zhao
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Fusion Reactor ◽  
Ion Irradiation ◽  
Ods Steels ◽  
The Difference ◽  
Induced Defects ◽  
Irradiation Induced Defects

The purpose of this study is to evaluate the irradiation defects of 12Cr-ODS steels induced by He/H ions, to provide basic understanding concerning development of fusion reactor components. Firstly, single He、H ion implantation and He/H ion co-implantation of 12Cr-ODS steels were performed at room temperature; and then SIMS were used to determine the He/H ion depth; finally, the irradiation induced defects were investigated by PALS and TEM. Characterization of the implanted samples with SIMS shows that He/H ions are mainly distributed at 4-6μm depth, consistent with the SRIM simulation. The PALS results show that the positron lifetime of H ions implanted samples increases slightly with increasing incident ions fluence, while for He and He/H ion implantation it is reversed. In addition, TEM results demonstrate that after irradiation, cavities are created in all samples, and He ion irradiation produce seriously larger damage compared to H ion. The positron lifetime results can be mainly ascribed to the difference of He and H ion interaction with defects.

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 373-376
Author(s):  
Ricardo Reitano ◽  
M. Zimbone ◽  
Paolo Musumeci ◽  
P. Baeri
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Ion Irradiation ◽  
Minority Carrier Lifetime ◽  
Time Resolved ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Photoluminescence Peak

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

Irradiation Induced Defects by Fe-Ion in 316L Stainless Steel Studied by Positron Annihilation Spectroscopy

2017 ◽  
Vol 373 ◽  
pp. 155-161
Author(s):  
Xing Zhong Cao ◽  
Er Yang Lu ◽  
Shuo Xue Jin ◽  
Yi Hao Gong ◽  
Yuan Chao Hu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Irradiation ◽  
High Mobility ◽  
Austenitic Stainless Steels ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Heavy Ion ◽  
Vacancy Defects ◽  
Induced Defects ◽  
Irradiation Induced Defects

Solution annealed type 316L austenitic stainless steels were irradiated using 2 MeV Fe ions at room temperature. The implanted fluences were 2×1012 ions/cm2 and 1×1013 ions/cm2, respectively. Variable mono-energetic positron beam was performed to characterize the evolution of microstructure and irradiation induced defects. Results show that large amount of vacancy defects formed after heavy ion irradiation. In which, some of mono-vacancies might migrate to form small-sized clusters at room temperature. After irradiation, implanted Fe atoms mainly be interstitials atoms, but some Fe atoms might recombine with vacancies due to their high mobility, which could decrease the defect concentration, effectively.

Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 461-464
Author(s):  
Ioana Pintilie ◽  
K. Irmscher ◽  
Ulrike Grossner ◽  
Bengt Gunnar Svensson ◽  
Bernd Thomas
Keyword(s):  
Nitrogen Doping ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Carbon And Nitrogen ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by Deep Level Transient Spectroscopy after irradiation with 6 MeV electrons at room temperature. This study is focusing on the influence of nitrogen doping and C/Si ratio on the behaviour of the Z1,2 and EH6,7 levels which occur in already as-grown material but are substantially enhanced by electron and ion irradiation. It was found that both the Z1,2 and EH6,7 concentrations increase with both the nitrogen doping and the C/Si ratio. However, while the Z1,2 concentration increases during post-irradiation thermal treatment the opposite holds for the EH6,7 level especially in silicon rich samples. On the basis of these results, the influence of carbon and nitrogen on the formation of the Z1,2 complex is reconfirmed and a possible identity of the EH6,7 defect is discussed.

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

Transmission Electron Microscopy Observation of 11MEV B5+ Ion Irradiation in Bi2Sr2CaCu2O7-x Single Crystal

1999 ◽  
Vol 5 (S2) ◽  
pp. 758-759
Author(s):  
W.L. Zhou ◽  
Y. Sasaki ◽  
Y. Ikuhara ◽  
C.J.O’Connor
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Target Material ◽  
Heavy Ion ◽  
Zone Melting ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Different Types ◽  
Induced Defects ◽  
Irradiation Induced Defects

Artificial defects generated by ion irradiation have been considered an efficient method to enhance the critical current density in superconducting materials. The mechanism of producing defects as flux pining centers is still an important issue since the efficiency of irradiation-induced defects in flux pinning strongly depends on their microstructures. Different types of defects have been found in heavy ion irradiation. However, there are few results that show light ion irradiation due to the target material selected, the type of light ion and energy, and the incident ion angle. Another factor is the difficulty of cross-sectional sample preparation. In this paper, a single crystal Bi2Sr2CaCu2O7-x with 11 MeV B5+ ion irradiation was observed by transmission electron microscope (TEM) from both plan and cross-sectional view.The Bi2Sr2CaCu2O7-x single crystals used for ion irradiation were prepared using the floating-zone melting method. The crystals were cleaved into thin sheets of about 20 μm thickness along the a-b plane and cut to about 2mmx2mm size.

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