scholarly journals Detection of Spin Polarized Band in VO2/TiO2(001) Strained Films via Orbital Selective Constant Initial State Spectroscopy

2020 ◽  
Vol 5 (4) ◽  
pp. 72
Author(s):  
Alessandro D’Elia ◽  
Cesare Grazioli ◽  
Albano Cossaro ◽  
Bowen Li ◽  
Chongwen Zou ◽  
...  
Keyword(s):  
Degrees Of Freedom ◽  
Electron System ◽  
Initial State ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Orbital Contribution ◽  
Resonant Photoemission ◽  
Spin Polarized ◽  
Strained Films

The VO2 is a 3d1 electron system that undergoes a reversible metal–insulator transition (MIT) triggered by temperature and characterized by an interplay between orbital, charge and lattice degrees of freedom. The characterization of the MIT features are therefore extremely challenging and powerful investigation tools are required. In this work, we demonstrate how a combination of resonant photoemission and constant initial state (CIS) spectroscopy can be used as an orbital selective probe of the MIT studying three different VO2/TiO2(001) strained films. The CIS spectra of the V 3d and V 3p photo-electrons shows sensitivity to different orbital contribution and the presence of a spin polarized band close to the Fermi level.

scholarly journals Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Nanowire Device ◽  
Sol Gel Synthesis

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

scholarly journals Critical behavior of transport and magnetotransport in a 2D electron system in Si near the metal-insulator transition

JETP Letters ◽  
2007 ◽  
Vol 84 (12) ◽  
pp. 662-666 ◽  
Author(s):  
D. A. Knyazev ◽  
O. E. Omel’yanovskii ◽  
V. M. Pudalov ◽  
I. S. Burmistrov
Keyword(s):  
Critical Behavior ◽  
Electron System ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (56) ◽  
pp. 31984-31984
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sol Gel Synthesis

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.

scholarly journals Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator Transition

2012 ◽  
Vol 63 (4) ◽  
pp. 270-272 ◽  
Author(s):  
Vladimír Štrbík ◽  
Štefan Chromik
Keyword(s):  
Electrical Transport ◽  
Insulator Transition ◽  
Transport Mechanisms ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Narrow Temperature Range ◽  
Temperature Range ◽  
Measured Resistivity ◽  
Different Parts

Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator TransitionWe have studied La0.67Sr0.33MnO3(LSMO) thin films with temperature of metal-insulator (TMI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs. temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range aroundTMIvery well agreement was found. We found out that the Debye's temperature was also increased (ΘD≈ 840 K) probably due to the change in crystallization of LSMO films.

scholarly journals Metal-insulator transition of the LaAlO3-SrTiO3interface electron system

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
Y. C. Liao ◽  
T. Kopp ◽  
C. Richter ◽  
A. Rosch ◽  
J. Mannhart
Keyword(s):  
Electron System ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal-insulator transition in a weakly interacting disordered electron system

2015 ◽  
Vol 92 (20) ◽  
Author(s):  
C. E. Ekuma ◽  
S.-X. Yang ◽  
H. Terletska ◽  
K.-M. Tam ◽  
N. S. Vidhyadhiraja ◽  
...  
Keyword(s):  
Electron System ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Weakly Interacting

Sr2CrOsO6: End point of a spin-polarized metal-insulator transition by5dband filling

2007 ◽  
Vol 75 (2) ◽  
Author(s):  
Y. Krockenberger ◽  
K. Mogare ◽  
M. Reehuis ◽  
M. Tovar ◽  
M. Jansen ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
End Point ◽  
Spin Polarized
Sign in / Sign up

Export Citation Format

Share Document