scholarly journals Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (56) ◽  
pp. 31984-31984
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sol Gel Synthesis

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.

scholarly journals Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (58) ◽  
pp. 33228-33228
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sol Gel Synthesis

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.

scholarly journals Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Nanowire Device ◽  
Sol Gel Synthesis

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

scholarly journals Operando characterization of conductive filaments during resistive switching in Mott VO2

2021 ◽  
Vol 118 (9) ◽  
pp. e2013676118
Author(s):  
Shaobo Cheng ◽  
Min-Han Lee ◽  
Xing Li ◽  
Lorenzo Fratino ◽  
Federico Tesler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Vanadium Dioxide ◽  
Electrical Transport ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Neuromorphic Computing ◽  
Metal Insulator ◽  
Transmission Electron

Vanadium dioxide (VO2) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal–insulator transition and that vacancy diffusion can erase the filament, allowing for the system to “forget.” Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.

Erratum: Role of magnetic and orbital ordering at the metal-insulator transition inNdNiO3[Phys. Rev. B73, 100409(R) (2006)]

2006 ◽  
Vol 74 (6) ◽  
Author(s):  
V. Scagnoli ◽  
U. Staub ◽  
A. M. Mulders ◽  
M. Janousch ◽  
G. I. Meijer ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Orbital Ordering ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Revealing the role of lattice distortions in the hydrogen-induced metal-insulator transition of SmNiO3

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Jikun Chen ◽  
Wei Mao ◽  
Binghui Ge ◽  
Jiaou Wang ◽  
Xinyou Ke ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Lattice Distortions

scholarly journals Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator Transition

2012 ◽  
Vol 63 (4) ◽  
pp. 270-272 ◽  
Author(s):  
Vladimír Štrbík ◽  
Štefan Chromik
Keyword(s):  
Electrical Transport ◽  
Insulator Transition ◽  
Transport Mechanisms ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Narrow Temperature Range ◽  
Temperature Range ◽  
Measured Resistivity ◽  
Different Parts

Characterization of Electrical Transport in Lsmo with Enhanced Temperature of Metal-Insulator TransitionWe have studied La0.67Sr0.33MnO3(LSMO) thin films with temperature of metal-insulator (TMI) transition enhanced to above 400 K, and we estimated characteristic electrical transport mechanisms for these films. We have fitted the measured resistivity vs. temperature ρ(T) dependence in a wide temperature range 4-500 K using different mechanisms of the electrical transport in different parts of ρ(T). In addition to the narrow temperature range aroundTMIvery well agreement was found. We found out that the Debye's temperature was also increased (ΘD≈ 840 K) probably due to the change in crystallization of LSMO films.

TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE

2010 ◽  
Vol 24 (27) ◽  
pp. 5451-5456 ◽  
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
X. F. CAO ◽  
W. X. ZHANG ◽  
B. PENG
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Transport Properties ◽  
Silicon Substrate ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Higher Temperature

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.

Sign in / Sign up

Export Citation Format

Share Document