scholarly journals Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

2017 ◽  
Vol 2 (1) ◽  
pp. 3 ◽  
Author(s):  
Jonathan Faugier-Tovar ◽  
Florica Lazar ◽  
Catherine Marichy ◽  
Christian Brylinski
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Atomic Layer ◽  
Atomic Ordering ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Layer Deposition

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition

2010 ◽  
Vol 97 (16) ◽  
pp. 162910 ◽  
Author(s):  
Yiqun Liu ◽  
Min Xu ◽  
Jaeyeong Heo ◽  
Peide D. Ye ◽  
Roy G. Gordon
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Materials ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 7084-7093 ◽  
Author(s):  
Y. Lin ◽  
C. Cheng ◽  
K. Chen ◽  
C. Fu ◽  
T. Chang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Reduction of Surface Residual Lithium Compounds for Single-Crystal LiNi0.6Mn0.2Co0.2O2 via Al2O3 Atomic Layer Deposition and Post-Annealing

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 84
Author(s):  
Jiawei Li ◽  
Junren Xiang ◽  
Ge Yi ◽  
Yuanting Tang ◽  
Huachen Shao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Surface Composition ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Cycling Stability ◽  
Al2o3 Coating ◽  
Lithium Compounds ◽  
Post Annealing ◽  
Layer Deposition

Surface residual lithium compounds of Ni-rich cathodes are tremendous obstacles to electrochemical performance due to blocking ion/electron transfer and arousing surface instability. Herein, ultrathin and uniform Al2O3 coating via atomic layer deposition (ALD) coupled with the post-annealing process is reported to reduce residual lithium compounds on single-crystal LiNi0.6Mn0.2Co0.2O2 (NCM622). Surface composition characterizations indicate that LiOH is obviously reduced after Al2O3 growth on NCM622. Subsequent post-annealing treatment causes the consumption of Li2CO3 along with the diffusion of Al atoms into the surface layer of NCM622. The NCM622 modified by Al2O3 coating and post-annealing exhibits excellent cycling stability, the capacity retention of which reaches 92.2% after 300 cycles at 1 C, much higher than that of pristine NCM622 (34.8%). Reduced residual lithium compounds on NCM622 can greatly decrease the formation of LiF and the degree of Li+/Ni2+ cation mixing after discharge–charge cycling, which is the key to the improvement of cycling stability.

Atomic layer deposition of epitaxial CeO2 thin layers for faster surface hydrogen oxidation and faster bulk ceria reduction/reoxidation

2015 ◽  
Vol 3 (19) ◽  
pp. 10498-10503 ◽  
Author(s):  
Adrien Marizy ◽  
Pascal Roussel ◽  
Armelle Ringuedé ◽  
Michel Cassir
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Hydrogen Oxidation ◽  
Atomic Layer ◽  
Thin Layers ◽  
Surface Hydrogen ◽  
Layer Deposition ◽  
Ceria Reduction

Thin ceria layers of 120 nm were processed by atomic layer deposition on both YSZ(100) single crystal substrates and polycrystalline YSZ ones.

Heteroepitaxial Growth of MgO Films on NiO(100) Single Crystal Surfaces

1994 ◽  
Vol 357 ◽  
Author(s):  
S. Imaduddin ◽  
A.M. Davidson ◽  
R.J. Lad
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Heteroepitaxial Growth ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Oxygen Anions ◽  
Mgo Layers

AbstractEpitaxial MgO layers were grown on cleaved NiO(100) single crystal surfaces. The less than 1% lattice mismatch between MgO and NiO allows almost ideal epitaxy of MgO at 100°C. The epitaxial films were created by dosing Mg onto stoichiometric NiO(100) both in ultra-high vacuum (UHV) and in an O2 atmosphere (5×10−7 Torr). Chemical interactions at the resulting interfaces were studied using XPS. When Mg is dosed onto NiO(100) in UHV, MgO forms by interacting with oxygen anions in the NiO substrate thereby reducing the nickel cations. Metallic Mg layers begin to form upon subsequent dosing. When Mg is deposited in O2, epitaxial MgO(100) layers grow to a thickness of at least 50Å as confirmed by in situ RHEED and LEED observations. Negligible intermixing between the MgO and NiO is observed during growth at 100°C and on subsequent annealing in UHV up to 600°C.

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