scholarly journals Establishing a Field-Effect Transistor Sensor for the Detection of Mutations in the Tumour Protein 53 Gene (TP53)—An Electrochemical Optimisation Approach

Biosensors ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 141 ◽  
Author(s):  
Lisa Crossley ◽  
Bukola Attoye ◽  
Vincent Vezza ◽  
Ewen Blair ◽  
Damion Corrigan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Open Circuit ◽  
Common Mutation ◽  
Dna Hybridisation ◽  
In Series ◽  
Gene Tp53 ◽  
Effect Transistor ◽  
Detection Of Mutations

We present a low-cost, sensitive and specific DNA field-effect transistor sensor for the rapid detection of a common mutation to the tumour protein 53 gene (TP53). The sensor consists of a commercially available, low-cost, field-effect transistor attached in series to a gold electrode sensing pad for DNA hybridisation. The sensor has been predominantly optimised electrochemically, particularly with respect to open-circuit potentiometry as a route towards understanding potential (voltage) changes upon DNA hybridisation using a transistor. The developed sensor responds sensitively to TP53 mutant DNA as low as 100 nM concentration. The sensor responds linearly as a function of DNA target concentration and is able to differentiate between complementary and noncomplementary DNA target sequences.

Frequency-shift keyed generation with an optically controlled GaAs field-effect transistor in a surface-acoustic-wave oscillator circuit

1987 ◽  
Vol 65 (8) ◽  
pp. 929-936
Author(s):  
O. Berolo
Keyword(s):  
Acoustic Wave ◽  
Frequency Shift ◽  
Surface Acoustic Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Open Circuit ◽  
Low Noise ◽  
Optical Modulator ◽  
Oscillator Circuit ◽  
Effect Transistor

A prototype circuit for potential optical integration was developed and evaluated for the generation of frequency-shift keyed (FSK) signals by simultaneously exploiting surface-acoustic wave (SAW) technology and the optical response of the GaAs field-effect transistor (FET).A SAW delay line to be utilized in the feedback path of an oscillator circuit was designed for operation at the fundamental frequency of 111 MHz and operated at its 12th harmonic (1.33 GHz). A low-noise FET was incorporated into the circuit in series with the SAW delay, and a low-power He:Ne laser was focussed through an optical modulator onto the FET structure. The gate bias, which controls the phase shift in the feedback loop of the oscillator, was applied via the open-circuit photovoltage induced at the Schottky-barrier junction of the FET.The optical modulator was driven by a pseudorandom bit generator to obtain FSK generation by the oscillator circuit. Results of the frequency spectrum of the oscillator signal as a function of bit rate and light intensity on the FET were obtained. The successful performance of the circuit indicated that integration of all these elements on GaAs would yield a useful device for FSK signal generation.Un prototype de circuit pour intégration optique potentielle a été développé et évalué pour la génération de signaux FSK (frequency-shift keyed), en exploitant simultanéement la technologie des ondes acoustiques de surface et la réponse optique du transistor GaAs à effet de champ.

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

scholarly journals Investigation of Organic Field-Effect Transistor (OFET) based NO2 Sensing Response using Low-Cost Green Synthesized Zinc Oxide Nanoparticles

2020 ◽  
Vol 33 (1) ◽  
pp. 31-36
Author(s):  
G. Balanagireddy ◽  
Ashwath Narayana ◽  
M. Roopa
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Average Particle Size ◽  
Microwave Assisted Synthesis ◽  
Average Particle ◽  
Nanostructured Particles ◽  
Effect Transistor

A low-cost and green-synthesized zinc oxide nanostructured particles are extensively studied owing to their remarkable and ample characteristics with less toxicity and eco-friendly approach. The present work comprehends the green synthesis of ZnO nanostructured particles using bougainvillea leaf extract-arbitrated microwave-assisted synthesis and their use in field effect transistor for nitrogen dioxide sensing at room temperature. The as-synthesized nanoparticles were characterized using analytical techniques; XRD determined the pure crystallite structure with no impurities, SEM confirmed the spherical shape of nanoparticles with ~20 nm (average particle size) and the atomic weight percentage were analyzed using EDAX, notable photophysical properties were revealed from absorption and emission spectra performed using UV-visible spectroscopy. Poly(3-hexylthiophene) and ZnO nanoparticles were employed in the field effect transistor (p-type) for NO2 sensing at room temperature with the mobility (field-effect) of ~10-4 cm2 V-1 s-1. The sensitivity of the fabricated OFET device was extracted from the transistor characteristics (at Vgs = -30 V and Vds = -40 V) found to be ~4.8 × 10-3 nA/ppm. The device exhibited engrossing characteristics such as excellent recoverability (> 95%), with ultrafast response time (< 30 s) and greater sensitivity with high stability as can be assessed from the electrical characteristics.

scholarly journals EGFET-Based Sensors for Bioanalytical Applications: A Review

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 4042 ◽  
Author(s):  
Salvatore Pullano ◽  
Costantino Critello ◽  
Ifana Mahbub ◽  
Nishat Tasneem ◽  
Samira Shamsir ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
High Sensitivity ◽  
Nucleic Acid Hybridization ◽  
Protein Protein Interaction ◽  
Effect Transistor ◽  
Bioanalytical Applications ◽  
Antigen Antibody ◽  
Low Cost Manufacturing

Since the 1970s, a great deal of attention has been paid to the development of semiconductor-based biosensors because of the numerous advantages they offer, including high sensitivity, faster response time, miniaturization, and low-cost manufacturing for quick biospecific analysis with reusable features. Commercial biosensors have become highly desirable in the fields of medicine, food, and environmental monitoring as well as military applications, whereas increasing concerns about food safety and health issues have resulted in the introduction of novel legislative standards for these sensors. Numerous devices have been developed for monitoring biological processes such as nucleic acid hybridization, protein–protein interaction, antigen–antibody bonds, and substrate–enzyme reactions, just to name a few. Since the 1980s, scientific interest moved to the development of semiconductor-based devices, which also include integrated front-end electronics, such as the extended-gate field-effect transistor (EGFET) biosensor, one of the first miniaturized chemical sensors. This work is intended to be a review of the state of the art focused on the development of biosensors and chemosensors based on extended-gate field-effect transistor within the field of bioanalytical applications, which will highlight the most recent research reported in the literature. Moreover, a comparison among the diverse EGFET devices will be presented, giving particular attention to the materials and technologies.

Extended Gate Field Effect Transistor Using GaN/Si Hybrids Nanostructures for pH Sensor

NANO ◽  
2017 ◽  
Vol 12 (09) ◽  
pp. 1750114 ◽  
Author(s):  
Manchen Zhang ◽  
Ruzhi Wang ◽  
Zhen Shen ◽  
Yuhang Ji
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Hybrid Nanostructure ◽  
Si Nanowires ◽  
Etching Technique ◽  
Effect Transistor ◽  
Hybrid Sensors

The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4[Formula: see text]mV/pH) than that of pristine Si NWs sensors (41.2[Formula: see text]mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.

Organic Field Effect Transistor using BaTiO3-Mn Doped and P(VDF-TrFE) for Non Volatile Memory Application

2008 ◽  
Vol 1071 ◽  
Author(s):  
Sambit Pattnaik ◽  
Ashish Garg ◽  
Monica Katiyar
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vinylidene Fluoride ◽  
Low Cost ◽  
Phase Evolution ◽  
Memory Device ◽  
Organic Field Effect Transistor ◽  
Non Volatile Memory ◽  
Contact Devices ◽  
Effect Transistor

AbstractHere, we report fabrication of an organic field effect transistor that can be used as a memory device. We have evaluated inorganic ferroelectric insulator manganese doped barium titanate(BTO), organic poly(vinylidene fluoride trifluoroethylene) P(VDF-TrFE), and their composite. The inorganic and organic ferroelectrics were fabricated using low cost process of spin coating followed by annealing to enhance crystallinity. The ferroelectric phase evolution is assessed by X-ray diffraction, MIM structure is used to study polarization behaviour and leakage current. Finally, OFETs are fabricated using thermal evaporation of 75 nm of pentacene. Gold electrodes of 70 nm were evaporated for the top contact devices keeping W/L=40. The OFET devices, for BTO/P(VDF-TrFE) composite insulator, showed memory effect with shift in threshold voltage of 8.5 ± 1.5V.

scholarly journals Inkjet-Printed Organic Field-Effect Transistor by Using Composite Semiconductor Material of Carbon Nanoparticles and Poly(3-Hexylthiophene)

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chih-Ting Lin ◽  
Chun-Hao Hsu ◽  
Chang-Hung Lee ◽  
Wen-Jung Wu
Keyword(s):  
Organic Electronics ◽  
Inkjet Printing ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Semiconductor Material ◽  
Organic Field Effect Transistor ◽  
Organic Semiconductor Materials ◽  
Effect Transistor

Poly(3-hexylthiophene), P3HT, has been widely used in organic electronics as a semiconductor material. It suffers from the low carrier mobility characteristics. This limits P3HT to be employed in applications. Therefore, the blending semiconductor material, carbon nanoparticle (CNP), and P3HT, are developed and examined by inkjet-printing organic field-effect transistor technology in this work. The effective carrier mobility of fabricated OFETs can be enhanced by 8 folds with adding CNP and using O2plasma treatment. At the same time, the transconductance of fabricated OFETs is also raised by 5 folds. Based on the observations of SEM, XRD, and FTIR, these improvements are contributed to the local field induced by the formation of CNP/P3HT complexes. This observation presents an insight of the development in organic semiconductor materials. Moreover, this work also offers a low-cost and effective semiconductor material for inkjet-printing technology in the development of organic electronics.

scholarly journals Detection of 1,5-anhydroglucitol as a Biomarker for Diabetes Using an Organic Field-Effect Transistor-Based Biosensor

Technologies ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 77 ◽  
Author(s):  
Hiroyuki Furusawa ◽  
Yusuke Ichimura ◽  
Kuniaki Nagamine ◽  
Rei Shiwaku ◽  
Hiroyuki Matsui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Point Of Care ◽  
Low Cost ◽  
Transfer Characteristic ◽  
Organic Field Effect Transistor ◽  
Pyranose Oxidase ◽  
Effect Transistor ◽  
Inkjet Printing Technology

Sensor devices that can be fabricated on a flexible plastic film produced at a low cost using inkjet-printing technology are suitable for point-of-care applications. An organic field-effect transistor (OFET)-based biosensor can function as a potentiometric electrochemical sensor. To investigate the usefulness of an OFET-based biosensor, we demonstrated the detection of 1,5-anhydroglucitol (1,5-AG) and glucose, which are monosaccharides used as biomarkers of diabetes. An OFET-based biosensor combined with a Prussian blue (PB) electrode, modified with glucose oxidase (GOx) or pyranose oxidase (POx), was utilized for the detection of the monosaccharides. When the GOx- or POx-PB electrode was immersed in glucose solution at the determined concentration, shifts in the low-voltage direction of transfer characteristic curves of the OFET were observed to be dependent on the glucose concentrations in the range of 0–10 mM. For 1,5-AG, the curve shifts were observed only with the POx-PB electrode. Detection of glucose and 1,5-AG was achieved in a substrate-specific manner of the enzymes on the printed OFET-biosensor. Although further improvements are required in the detection concentration range, the plastic-filmOFET-biosensors will enable the measurement of not only diabetes biomarkers but also various other biomarkers.

scholarly journals Tuning ambipolarity in a polymer field effect transistor using graphene electrodes

2020 ◽  
Vol 8 (24) ◽  
pp. 8120-8124 ◽  
Author(s):  
Kaushik Bairagi ◽  
Sara Catalano ◽  
Francesco Calavalle ◽  
Elisabetta Zuccatti ◽  
Roger Llopis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Low Cost ◽  
The Other ◽  
Other Hand ◽  
Effect Transistor ◽  
The One

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene.

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