scholarly journals Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

2019 ◽  
Vol 9 (15) ◽  
pp. 3054 ◽  
Author(s):  
Zeheng Wang ◽  
Zhenwei Zhang ◽  
Shengji Wang ◽  
Chao Chen ◽  
Zirui Wang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Charge Compensation ◽  
High Electron ◽  
High Electron Mobility ◽  
Design And Optimization ◽  
Local Charge ◽  
Local Charge Compensation ◽  
Thin Barrier

In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.

scholarly journals Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

2020 ◽  
Vol 829 ◽  
pp. 154542 ◽  
Author(s):  
Bing Ren ◽  
Meiyong Liao ◽  
Masatomo Sumiya ◽  
Jian Li ◽  
Lei Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

scholarly journals A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Mohammad Javad Sharifi ◽  
Davoud Bahrepour
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Xor Gate ◽  
High Electron Mobility ◽  
Existing Structures ◽  
Input And Output ◽  
Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

AlGaN/GaN Structures Grown by HVPE: Growth and Characterization

2003 ◽  
Vol 764 ◽  
Author(s):  
M.A. Mastro ◽  
D.V. Tsvetkov ◽  
A.I. Pechnikov ◽  
V.A. Soukhoveev ◽  
G.H. Gainer ◽  
...  
Keyword(s):  
Mass Production ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Hydride Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Light Emitting ◽  
Device Structures ◽  
Ultraviolet Light Emitting Diodes ◽  
Growth Technology

AbstractThis letter reports on multi-layer submicron epitaxial device structures grown by hydride vapor phase epitaxy (HVPE). This is the first demonstration of both high electron mobility transistor (HEMT) devices and ultraviolet light emitting diodes (LED) emitting in the wavelength range from 305 to 340 nm based on AlGaN/GaN and AlGaN/AlGaN heterostructures grown by HVPE. Two unique aspects of this technological approach are the growth of Al-containing epitaxial material by HVPE and use of HVPE to form submicron multi-layer epitaxial structures. The high performance of HVPE grown devices presented in this report demonstrates the significant potential that exists for HVPE growth technology for mass production of device epitaxial wafers.

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