scholarly journals Effect of Different Welding Methods on Flip-Chip LED (FC-LED) Filament Properties

2018 ◽  
Vol 8 (11) ◽  
pp. 2254
Author(s):  
Mengtian Li ◽  
Jun Zou ◽  
Wengjuan Wu ◽  
Mingming Shi ◽  
Bobo Yang ◽  
...  
Keyword(s):  
Steady State ◽  
High Performance ◽  
Production Efficiency ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Luminous Flux ◽  
Vacuum Furnace ◽  
Shearing Force ◽  
Voltage Change ◽  
In Series

This paper investigates the effect of two different welding methods, direct welding (DW) and vacuum furnace welding (VFW), on flip-chip light-emitting diode (FC-LED) filament properties. Shearing force, SEM, steady-state voltage, steady-state luminous flux, and change of photoelectric performance with aging time were employed to characterize the differences in filament properties between the two welding methods. The shearing test revealed that the average shearing force of the VFW group was higher than that of the DW group, but the two groups followed the standard. Furthermore, the microstructure of the VFW group fault was more smoother, and the voids were fewer and smaller based on the SEM test results. The steady-state voltage and luminous flux revealed that the VFW group had a more concentrated voltage and a higher luminous flux. The aging data revealed that the steady-state voltage change rate of both groups was not very different, and both luminous flux maintenance rates of the VFW group were higher than those of the DW group, but all were within the standard range. In conclusion, if there is a higher requirement for filament in a practical application, such as the filament is connected in series or in parallel and needs a higher luminous flux, it can be welded using vacuum furnace welding. If the focus is on production efficiency and the high performance of filaments is not required, direct welding can be used.

scholarly journals Effect of Different Bonding Materials on Flip-Chip LED Filament Properties

2019 ◽  
Vol 10 (1) ◽  
pp. 47
Author(s):  
Chengyu Guan ◽  
Jun Zou ◽  
Qingchang Chen ◽  
Mingming Shi ◽  
Bobo Yang
Keyword(s):  
Steady State ◽  
Blue Light ◽  
Flip Chip ◽  
Solder Joints ◽  
High Reliability ◽  
Luminous Flux ◽  
Junction Temperature ◽  
Shearing Force ◽  
Sem Images ◽  
Photoelectric Properties

This article researches the effect of Sn-based solder alloys on flip-chip light-emitting diode LED (FC-LED) filament properties. SEM images, shearing force, steady-state voltage, blue light luminous flux, and junction temperature were examined to demonstrate the difference between two types of FC-LED filaments welded with two solders. The microstructure surface of Sn90Sb10 filament solder joints was smoother and had fewer voids and cracks compared with that of SAC0307 filament solder joints, which indicates that the Sn90Sb10 filaments had a higher shearing force than the SAC0307 filaments; moreover, the average shearing force was beyond 200 gf (standard shearing force). The steady-state voltage and junction temperature of the Sn90Sb10 solder-welded FC-LED filament were lower, and the Sn90Sb10 filament had a relatively higher blue light luminous flux. If high reliability of the solder joints and better photoelectric properties of the filaments are required, this Sn90Sb10 solder is the best bonding material for FC-LED filament welding.

High-Performance (Al $_{x}$Ga $_{1 - x}$) $_{0.5}$In $_{0.5}$P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure

2008 ◽  
Vol 20 (23) ◽  
pp. 1950-1952 ◽  
Author(s):  
Yea-Chen Lee ◽  
Hao-Chung Kuo ◽  
Chia-En Lee ◽  
Tien-Chang Lu ◽  
Shing-Chung Wang
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Высоковольтные светодиодные кристаллы AlInGaN

2019 ◽  
Vol 53 (11) ◽  
pp. 1562
Author(s):  
Л.К. Марков ◽  
М.В. Кукушкин ◽  
А.С. Павлюченко ◽  
И.П. Смирнова ◽  
Г.В. Иткинсон ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diode ◽  
Contact Region ◽  
Forward Voltage ◽  
Insulating Layer ◽  
Light Emitting ◽  
Type Contact ◽  
In Series ◽  
Distribution Uniformity ◽  
P Type

AbstractA high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n -type contact, the n -type contact pads in them are arranged inside the p -type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n - and p -type contacts as well as current-carrying strips.

Analysis of Characteristics of Halogen and LED Automobile Lamps

2020 ◽  
pp. 57-62
Author(s):  
Olga Yu. Kovalenko ◽  
Yulia A. Zhuravlyova
Keyword(s):  
Power Consumption ◽  
Flip Chip ◽  
Weather Conditions ◽  
Luminous Flux ◽  
Luminous Efficacy ◽  
Colour Temperature ◽  
Study Results ◽  
Calculation Results ◽  
Mandatory Rules ◽  
Halogen Lamps

This work contains analysis of characteristics of automobile lamps by Philips, KOITO, ETI flip chip LEDs, Osram, General Electric (GE), Gtinthebox, OSLAMPledbulbs with H1, H4, H7, H11 caps: luminous flux, luminous efficacy, correlated colour temperature. Characteristics of the studied samples are analysed before the operation of the lamps. The analysis of the calculation results allows us to make a conclusion that the values of correlated colour temperature of halogen lamps are close to the parameters declared by manufacturers. The analysis of the study results has shown that, based on actual values of correlated colour temperature, it is not advisable to use LED lamps in unfavourable weather conditions (such as rain, fog, snow). The results of the study demonstrate that there is a slight dispersion of actual values of luminous flux of halogen lamps by different manufacturers. Maximum variation between values of luminous flux of different lamps does not exceed 14 %. The analysis of the measurement results has shown that actual values of luminous flux of all halogen lamps comply with the mandatory rules specified in the UN/ECE Regulation No. 37 and luminous flux of LED lamps exceeds maximum allowable value by more than 8 %. Luminous efficacy of LED lamps is higher than that of halogen lamps: more than 82 lm/W and lower power consumption. The results of the measurements have shown that power consumption of a LED automobile lamp is lower than that of similar halogen lamps by 3 times and their luminous efficacy is higher by 5 times.

scholarly journals Perspectives on UVC LED: Its Progress and Application

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 196
Author(s):  
Tsung-Chi Hsu ◽  
Yu-Tsai Teng ◽  
Yen-Wei Yeh ◽  
Xiaotong Fan ◽  
Kuo-Hsiung Chu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Flip Chip ◽  
Layer Structure ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Reverse Current ◽  
Light Extraction ◽  
Epitaxial Layers ◽  
High Electron ◽  
Recombination Rates

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

scholarly journals Preparation of Oil Palm Empty Fruit Bunch Hydrolysate

Fermentation ◽  
2021 ◽  
Vol 7 (2) ◽  
pp. 81
Author(s):  
Hironaga Akita ◽  
Mohd Zulkhairi Mohd Yusoff ◽  
Shinji Fujimoto
Keyword(s):  
Hydrothermal Treatment ◽  
Palm Oil ◽  
Oil Palm ◽  
High Performance ◽  
Production Efficiency ◽  
Solid Phase ◽  
Waste Product ◽  
Treatment Temperature ◽  
Empty Fruit Bunch ◽  
Glucose Content

Malaysia is the second largest palm oil producer and exporter globally. When crude palm oil is produced in both plantations and oil processing mills, a large amount of oil palm empty fruit bunch (OPEFB) is simultaneously produced as a waste product. Here, we describe the preparation of hydrolysate from OPEFB. After OPEFB was hydrothermally treated at 180–200 °C, the resultant liquid phase was subjected to high-performance liquid chromatography analysis, while the solid phase was used for acidic and enzymatic hydrolysis. Hemicellulose yield from the acid-treated solid phase decreased from 153 mg/g-OPEFB to 27.5 mg/g-OPEFB by increasing the hydrothermal treatment temperature from 180 to 200 °C. Glucose yield from the enzyme-treated solid phase obtained after hydrothermal treatment at 200 °C was the highest (234 ± 1.90 mg/g-OPEFB, 61.7% production efficiency). In contrast, xylose, mannose, galactose, and arabinose yields in the hydrolysate prepared from the solid phase hydrothermally treated at 200 °C were the lowest. Thus, we concluded that the optimum temperature for hydrothermal pretreatment was 200 °C, which was caused by the low hemicellulose yield. Based on these results, we have established an effective method for preparing OPEFB hydrolysates with high glucose content.

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽  
2021 ◽  
Author(s):  
Soon-Hwan Kwon ◽  
Tae-Hyeon Kim ◽  
Sang-Min Kim ◽  
Semi Oh ◽  
Kyoung-Kook Kim
Keyword(s):  
Gas Sensors ◽  
High Performance ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Temperature Solution ◽  
Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

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