scholarly journals Di-Chromatic InGaN Based Color Tuneable Monolithic LED with High Color Rendering Index

2018 ◽  
Vol 8 (7) ◽  
pp. 1158 ◽  
Author(s):  
Amit Yadav ◽  
Ilya Titkov ◽  
Alexei Sakharov ◽  
Wsevolod Lundin ◽  
Andrey Nikolaev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Power ◽  
Color Temperature ◽  
Multiple Quantum ◽  
Wide Range ◽  
Color Rendering Index ◽  
Carrier Redistribution ◽  
Power Evolution ◽  
Color Rendering ◽  
First Time

We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

1990 ◽  
Vol 198 ◽  
Author(s):  
D.C. Houghton ◽  
N.L. Rowell
Keyword(s):  
Quantum Wells ◽  
Misfit Dislocation ◽  
Thermal Processing ◽  
Internal Quantum Efficiency ◽  
Dislocation Nucleation ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Dislocation Generation ◽  
Strained Layers ◽  
Wide Range

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

scholarly journals Color Temperature Tunable White-Light LED Cluster with Extrahigh Color Rendering Index

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Minhao Zhang ◽  
Yu Chen ◽  
Guoxing He
Keyword(s):  
White Light ◽  
Experimental Results ◽  
Color Temperature ◽  
Blue Led ◽  
Average Value ◽  
Red Led ◽  
Green Led ◽  
Color Rendering Index ◽  
Color Rendering

The correlated color temperature (CCT) tunable white-light LED cluster with extrahigh color rendering property has been found by simulation and fabricated, which consists of three WW LEDs (CCT = 3183 K), one red LED (634.1 nm), one green LED (513.9 nm), and one blue LED (456.2 nm). The experimental results show that this cluster can realize the CCT tunable white-lights with a color rendering index (CRI) above 93, special CRI R9 for strong red above 90, average value of the special CRIs of R9 to R12 for the four saturated colors (red, yellow, green, and blue) above 83, and luminous efficacies above 70 lm/W at CCTs of 2719 K to 6497 K.

scholarly journals Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84Multiple Quantum Wells on Ge Virtual Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hung-Pin Hsu ◽  
Pong-Hong Yang ◽  
Jeng-Kuang Huang ◽  
Po-Hung Wu ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Detailed Comparison ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Wide Range ◽  
Quantum Confined

We report a detailed characterization of a Ge/Si0.16Ge0.84multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

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