scholarly journals Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

2018 ◽  
Vol 8 (7) ◽  
pp. 1139 ◽  
Author(s):  
Minh Tran ◽  
Duanni Huang ◽  
Tin Komljenovic ◽  
Jonathan Peters ◽  
Aditya Malik ◽  
...  
Keyword(s):  
High Performance ◽  
Photonic Devices ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Integrated Photonics ◽  
Delay Lines ◽  
Low Loss ◽  
Silicon Waveguides ◽  
Silicon Waveguide ◽  
Ultra Low Noise

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an ultra-low-loss silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

scholarly journals Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

2018 ◽  
Author(s):  
Minh Tran ◽  
Duanni Huang ◽  
Tin Komljenovic ◽  
Jonathan Peters ◽  
Aditya Malik ◽  
...  
Keyword(s):  
High Performance ◽  
Photonic Devices ◽  
Low Noise ◽  
Integrated Photonics ◽  
Delay Lines ◽  
Low Loss ◽  
Silicon Waveguides ◽  
High Q ◽  
Silicon Waveguide ◽  
Ultra Low Noise

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here we present an ultra-low-loss silicon waveguide on 500 nm thick SOI platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

scholarly journals Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

2018 ◽  
Author(s):  
Minh Tran ◽  
Duanni Huang ◽  
Tin Komljenovic ◽  
Jonathan Peters ◽  
Aditya Malik ◽  
...  
Keyword(s):  
High Performance ◽  
Photonic Devices ◽  
Low Noise ◽  
Integrated Photonics ◽  
Delay Lines ◽  
Low Loss ◽  
Silicon Waveguides ◽  
High Q ◽  
Silicon Waveguide ◽  
Ultra Low Noise

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here we present an ultra-low-loss silicon waveguide on 500 nm thick SOI platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

scholarly journals A High Q-Factor Outer-Frame-Anchor Gyroscope Operating at First Resonant Mode

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1071
Author(s):  
Bo Jiang ◽  
Yan Su ◽  
Guowen Liu ◽  
Lemin Zhang ◽  
Fumin Liu
Keyword(s):  
High Performance ◽  
Microelectromechanical Systems ◽  
Resonant Mode ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Q Factor ◽  
Wafer Level ◽  
High Q ◽  
Ring Structures ◽  
Static Performance

Disc gyroscope manufactured through microelectromechanical systems (MEMS) fabrication processes becomes one of the most critical solutions for achieving high performance. Some reported novel disc constructions acquire good performance in bias instability, scale factor nonlinearity, etc. However, antivibration characteristics are also important for the devices, especially in engineering applications. For multi-ring structures with central anchors, the out-of-plane motions are in the first few modes, easily excited within the vibration environment. The paper presents a multi-ring gyro with good dynamic characteristics, operating at the first resonant mode. The design helps obtain better static performance and antivibration characteristics with anchor points outside of the multi-ring resonator. According to harmonic experiments, the nearest interference mode is located at 30,311 Hz, whose frequency difference is 72.8% far away from working modes. The structures were fabricated with silicon on insulator (SOI) processes and wafer-level vacuum packaging, where the asymmetry is 780 ppm as the frequency splits. The gyro also obtains a high Q-factor. The measured value at 0.15 Pa was 162 k, which makes the structure have sizeable mechanical sensitivity and low noise.

An Ultra-Low Noise Instrumentation Amplifer Designed for High Temperature Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000082-000086
Author(s):  
Jeff Watson ◽  
Gustavo Castro
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Instrumentation Amplifier ◽  
Leakage Currents ◽  
Comprehensive Reliability ◽  
High Temperature Operation ◽  
Temperature Applications

This paper discusses a very low noise instrumentation amplifier designed specifically for high temperature applications. The device uses a proprietary silicon-on-insulator process that minimizes parasitic leakage currents at elevated temperature. Variance in device parameters are managed to maintain high performance over a wide temperature range. Layout and packaging considerations that would affect long term reliability are addressed. The amplifier is well characterized above 200°C and attains much higher performance than amplifiers not optimized for high temperature operation. Comprehensive reliability testing over temperature has been completed.

scholarly journals Elevating silicon into a high performance nonlinear optical platform through the integration of 2D graphene oxide thin films

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
High Performance ◽  
Nonlinear Optical ◽  
Kerr Nonlinearity ◽  
Photonic Devices ◽  
Silicon On Insulator ◽  
Layer By Layer ◽  
Large Area ◽  
Precise Control ◽  
Highly Nonlinear ◽  
Coating Method

Abstract Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1 − 3 layers of GO, and 0.4-mm-long films with 5 − 20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

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