scholarly journals High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

2017 ◽  
Vol 7 (9) ◽  
pp. 929 ◽  
Author(s):  
Hao Cai ◽  
Wang Kang ◽  
You Wang ◽  
Lirida Naviner ◽  
Jun Yang ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Performance ◽  
Spin Transfer Torque ◽  
Spin Transfer

scholarly journals Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

2021 ◽  
Vol 11 (4) ◽  
pp. 38
Author(s):  
Mohammad Nasim Imtiaz Khan ◽  
Shivam Bhasin ◽  
Bo Liu ◽  
Alex Yuan ◽  
Anupam Chattopadhyay ◽  
...  
Keyword(s):  
High Performance ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Side Channel ◽  
Secret Key ◽  
Side Channel Attack ◽  
Static Power ◽  
High Scalability ◽  
Power Operation ◽  
Comprehensive Study

Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. However, these memories bring new threats to data security. In this paper, we investigate their vulnerability against Side Channel Attack (SCA). We assume that the adversary can monitor the supply current of the memory array consumed during read/write operations and recover the secret key of Advanced Encryption Standard (AES) execution. First, we show our analysis of simulation results. Then, we use commercial NVM chips to validate the analysis. We also investigate the effectiveness of encoding against SCA on emerging NVMs. Finally, we summarize two new flavors of NVMs that can be resilient against SCA. To the best of our knowledge, this is the first attempt to do a comprehensive study of SCA vulnerability of the majority of emerging NVM-based cache.

scholarly journals A Recent Progress of Spintronics Devices for Integrated Circuit Applications

2018 ◽  
Vol 8 (4) ◽  
pp. 44 ◽  
Author(s):  
Tetsuo Endoh ◽  
Hiroaki Honjo
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Review Article ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
The Other ◽  
Recent Advancement ◽  
Spintronics Device

Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 8336-8339 ◽  
Author(s):  
Sol Jung ◽  
Haein Yim
Keyword(s):  
Magnetic Anisotropy ◽  
Saturation Magnetization ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Strong Candidate ◽  
Memory Applications

Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å]5 and [CoSiB 9 Å/Pd 14 Å]5 multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

scholarly journals Spin Torque Oscillator for High Performance Magnetic Memory

2015 ◽  
Vol 20 (1) ◽  
pp. 77
Author(s):  
Rachid Sbiaa ◽  
Khaled Bouziane
Keyword(s):  
High Performance ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Free Layer ◽  
Switching Current ◽  
Thermal Stability Of

A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

scholarly journals Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Doo Hyung Kang ◽  
Mincheol Shin
Keyword(s):  
Magnetic Anisotropy ◽  
Current Density ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Switching Current ◽  
20 Nm ◽  
Hybrid Switching

AbstractRecently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT) and spin-orbit torque (SOT) hybrid switching, which guarantees fast magnetization switching and deterministic switching, has recently been achieved in experiments. In this study, the critical switching current density of the MTJ with S-PMA through the interplay of STT and SOT was investigated using theoretical and numerical methods. As the current density inducing SOT ($$J_{\text {SOT}}$$ J SOT ) increases, the critical switching current density inducing STT ($$J_{\text {STT,c}}$$ J STT,c ) decreases. Furthermore, for a given $$J_{\text {SOT}}$$ J SOT , $$J_{\text {STT,c}}$$ J STT,c increases with increasing thickness, whereas $$J_{\text {STT,c}}$$ J STT,c decreases as the diameter increases. Moreover, $$J_{\text {STT,c}}$$ J STT,c in the plane of thickness and spin-orbit field-like torque ($$\beta$$ β ) was investigated for a fixed $$J_{\text {SOT}}$$ J SOT and diameter. Although $$J_{\text {STT,c}}$$ J STT,c decreases with increasing $$\beta$$ β , $$J_{\text {STT,c}}$$ J STT,c slowly increases with increasing thickness and increasing $$\beta$$ β . The power consumption was investigated as a function of thickness and diameter at the critical switching current density. Experimental confirmation of these results using existing experimental techniques is anticipated.

Sign in / Sign up

Export Citation Format

Share Document