scholarly journals Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters

2021 ◽  
Vol 11 (23) ◽  
pp. 11258
Author(s):  
Amal Mohamed Ahmed Ali ◽  
Naser M. Ahmed ◽  
Norlaili A. Kabir ◽  
Mohammed Khalil Mohammed Ali ◽  
Hanan Akhdar ◽  
...  
Keyword(s):  
Thin Film ◽  
Radiation Dosimetry ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Effective Atomic Number ◽  
Absorbed Dose ◽  
X Ray ◽  
Effect Transistor ◽  
Materials Used

A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. Development of zinc oxide-Lead (ZnO-Pb) of different thicknesses fabricated by chemical bath deposition were investigated to study their sensitivity following irradiation using a low absorbed dose that can be used in diagnostic and interventional radiology (9, 36.5, and 70 mGy) and high absorbed dose (1, 5, and 10 Gy) of X-ray. The morphology and structure of the as-prepared films were analysed using FESEM and XRD measurements. The device relies on sensing the changes in the local electric field arising from radiation interactions in the absorber, coupled with the semiconductor materials used in this work—ZnO-Pb as the EGFET. Then the sensitivity of all devices was examined. Generally, thin-film devices showed less sensitivity to X-ray than the disk type. The sensitivity of the thin film dropped from 6.66 mV/to 1.42 mV/Gy, while the sensitivity of the ZnO-Pb disk type was 23.3 mV/Gy, which then dropped to 6.30 6.42 mV/Gy. Furthermore, the disk type ZnO-Pb was exposed to a high absorbed dose and obtained a sensitivity value of 0.08 mV/Gy, while the ZnO-Pb thin film obtained 0.01 mV/Gy. This can be related to the influence of thickness on the sensitivity of the dosimeter. However, the device’s performance characteristics, like sensitivity to radiation exposure and operating dose area, were discovered to be strongly dependent on the materials employed, effective atomic number, and thickness of the materials. Based on the results shown above, these devices might be considered a low-cost candidate for real-time -radiation dosimetry at room temperature. Furthermore, the thickest sample of 1 mm showed better sensitivity to radiation, compared to the thinner samples.

scholarly journals Investigation of Organic Field-Effect Transistor (OFET) based NO2 Sensing Response using Low-Cost Green Synthesized Zinc Oxide Nanoparticles

2020 ◽  
Vol 33 (1) ◽  
pp. 31-36
Author(s):  
G. Balanagireddy ◽  
Ashwath Narayana ◽  
M. Roopa
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Average Particle Size ◽  
Microwave Assisted Synthesis ◽  
Average Particle ◽  
Nanostructured Particles ◽  
Effect Transistor

A low-cost and green-synthesized zinc oxide nanostructured particles are extensively studied owing to their remarkable and ample characteristics with less toxicity and eco-friendly approach. The present work comprehends the green synthesis of ZnO nanostructured particles using bougainvillea leaf extract-arbitrated microwave-assisted synthesis and their use in field effect transistor for nitrogen dioxide sensing at room temperature. The as-synthesized nanoparticles were characterized using analytical techniques; XRD determined the pure crystallite structure with no impurities, SEM confirmed the spherical shape of nanoparticles with ~20 nm (average particle size) and the atomic weight percentage were analyzed using EDAX, notable photophysical properties were revealed from absorption and emission spectra performed using UV-visible spectroscopy. Poly(3-hexylthiophene) and ZnO nanoparticles were employed in the field effect transistor (p-type) for NO2 sensing at room temperature with the mobility (field-effect) of ~10-4 cm2 V-1 s-1. The sensitivity of the fabricated OFET device was extracted from the transistor characteristics (at Vgs = -30 V and Vds = -40 V) found to be ~4.8 × 10-3 nA/ppm. The device exhibited engrossing characteristics such as excellent recoverability (> 95%), with ultrafast response time (< 30 s) and greater sensitivity with high stability as can be assessed from the electrical characteristics.

pH sensor based on Au NPs/ ITO membrane as extended gate field-effect transistor

2021 ◽  
Author(s):  
Saleh K. Alsaee ◽  
Naser Mahmoud Ahmed ◽  
Elham Mzwd ◽  
Ahmad Fairuz Omar ◽  
A.I. Aljameel ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Spectroscopic Techniques ◽  
Au Nps ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Effect Transistor

Abstract In the present work, gold nanoparticles (Au NPs) were synthesized on indium tin oxide (ITO) thin film on glass substrate for the pH sensing application based on extended gate field effect transistor (EGFET). The ITO thin film was deposited on glass using RF sputtering and then the Au NPs were synthesized on it by pulsed laser ablation in liquid (PLAL) technique. The Au NPs were characterized using transmission electron microscope (TEM), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopic techniques. From the TEM analysis, the size of the spherical shaped Au NPs was found to be in the range of 5–22 nm. The UV-Vis spectroscopy analysis revealed absorption peak at 518 nm, indicating purplish red color. The XPS data revealed Au 4f doublet binding energy peaks of the photoelectrons at 83.79 and 87.45 eV. The current-voltage (I-V) curves indicated pH sensitivities values of 43.6 mV/pH and 0.6 \({\left(\mu A\right)}^{\frac{1}{2}} /pH\) with linear regression of 0.9. The hysteresis and drift characteristics of Au NPs/ITO/G membrane were also studied to investigate its stability and reliability. The results of this work demonstrated that the Au NPs/ITO/G membrane is quite useful for the acidity and basicity detection.

scholarly journals Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

2019 ◽  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Semiconductor Layer ◽  
X Ray ◽  
Channel Layer ◽  
Effect Transistor

The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physical properties of materials since the reported EDLFET and the modulation of electronic states have so far been realised on oxides, nitrides, carbon nanotubes and organic semiconductor but has been rarely reported for the chalcogenides. Honey was used as a gel like electrolytic gate dielectric to generate an enhanced electric field response over SnS semiconductor channel layer and due to its ability to produces high on-current and low voltage operation while forming an ionic gel-like solution similar to ionic gels which consist of ionic liguids. SnS gated honey Electric double layer field effect transistor was assembled using tin sulphide (SnS) thin film as semiconductor channel layer and honey as gate dielectric. The measured gate capacitance of honey using LCR meter was measured as 2.15 μF/ cm2 while the dielectric constant is 20.50. The semiconductor layer was deposited using Aerosol assisted chemical vapour deposition and annealed in open air at 250 on an etched region about the middle of a 4×4 mm FTO glass substrate with the source and drain electrode region defined by the etching and masking at the two ends of the substrate. Iridium was used as the gate electrode while a copper wire was masked to the source and drain region to create electrode contact. The Profilometry, X-ray diffraction, Scanning electron microscope, Energy dispersive X-ray spectroscopy, Hall Effect measurement and digital multimeters were used to characterise the device. The SnS thin film was found to be polycrystalline consisting of Sn and S elements with define grains, an optical band of 1.42 eV and of 0.4 μm thickness. The transistor operated with a p type channel conductivity in a depletion mode with a field effect mobility of 16.67 cm2/Vs, cut-off voltage of 1.6 V, Drain saturation current of1.35μA, a transconductance of -809.61 nA/V and a sub threshold slope of -1.6 Vdec-1 which is comparable to standard specifications in Electronics Data sheets. Positive gate bias results in a shift in the cut off voltage due to charge trapping in the channel/dielectric interface.

Junction Field Effect Transistor X-RAY Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
J.C. Lund ◽  
F. Olschner ◽  
L. Rehn
Keyword(s):  
Small Area ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
X Ray ◽  
Effect Transistor ◽  
Spectrometer System

ABSTRACTWe describe the theory of operation, design, and estimated performance of an n-channel JFET designed to be operated as a detector in an X-ray spectrometer system. We estimate that a room temperature (300 K) JFET detector can be built with performance comparable to a small area, cryogenically cooled Si(Li) detector.

The Low Specific Ohmic Contact Resistivity of Alloyed Ge—LOW—Content Au on Si—Implanted Electrically—Active GaAs Crystal Layers

1993 ◽  
Vol 300 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Field Effect ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Field Effect Transistor ◽  
Metallic Surface ◽  
Gaas Crystal ◽  
Crystallographic Characteristics ◽  
Effect Transistor

ABSTRACTThe author did experiments on ohmic contacts between alloyed goldgerumanium (AuGe) thin film systems and Si–implanted n–type GaAs crystal conductive layers on semi–insulating wafers in order to obtain stable ohmic contacts for source–drain electrodes of Si–implanted metal–semiconductor field–effect–transistor arrays as the tools of investigating semi-insulating GaAs crystallographic–characteristics uniformity. Hot–stage–alloyed low–Ge–content (content in charged AuGe wire: < a few wt.%) AuGe/Au films and GaAs crystal n–type Si–implanted layers showed smooth metallic surface morphology (like gold reflection) and low specific ohmic resistivity (≃10exp.−6 Ω/cm2) (by G.S.Marlow and M.B.Mukunda method) at Room temperature on the condition of typical 0.25 X 10exp.13/cm2− 1 X 10exp.13/cm2 Si dosage at 100keV–200keV and 850°C-15 min capless annealing in 2.7 Torr AsH3+Ar atmosphere for S.I GaAs crystal wafers.

scholarly journals Structural and microstructural study of SnS thin film semiconductor of 0.2

2019 ◽  
Vol 7 (1) ◽  
pp. 26
Author(s):  
Thomas Ojonugwa Daniel ◽  
Uno Essang Uno ◽  
Kasim Uthman Isah ◽  
Umaru Ahmadu
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapour ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Distribution ◽  
Effect Transistor

SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.  

Fast-Response X-ray Detector Based on Nanocrystalline Ga2O3 Thin Film Prepared at Room Temperature

2021 ◽  
pp. 149619
Author(s):  
Manni Chen ◽  
Zhipeng Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Fast Response ◽  
X Ray ◽  
Ga2o3 Thin Film
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