scholarly journals Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

2021 ◽  
Vol 11 (23) ◽  
pp. 11254
Author(s):  
Gabriel Molas ◽  
Etienne Nowak
Keyword(s):  
Artificial Intelligence ◽  
Phase Change ◽  
Data Storage ◽  
Flash Memory ◽  
Embedded Memory ◽  
Technology Evolution ◽  
Emerging Memory ◽  
Pure Data ◽  
And Shifts

This paper presents an overview of emerging memory technologies. It begins with the presentation of stand-alone and embedded memory technology evolution, since the appearance of Flash memory in the 1980s. Then, the progress of emerging memory technologies (based on filamentary, phase change, magnetic, and ferroelectric mechanisms) is presented with a review of the major demonstrations in the literature. The potential of these technologies for storage applications addressing various markets and products is discussed. Finally, we discuss how the rise of artificial intelligence and bio-inspired circuits offers an opportunity for emerging memory technology and shifts the application from pure data storage to storage and computing tasks, and also enlarges the range of required specifications at the device level due to the exponential number of new systems and architectures.

Thermal Conductivity Measurements and Modeling of Phase-Change GST Materials

2007 ◽  
Author(s):  
Yizhang Yang ◽  
Taehee Jeong ◽  
Hendrik F. Hamann ◽  
Jimmy Zhu ◽  
Mehdi Asheghi
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Data Storage ◽  
Flash Memory ◽  
Performance Optimization ◽  
Phase Change Materials ◽  
Memory Cell ◽  
Data Access ◽  
Optical Recording ◽  
Access Time

Phase-change technology has been widely used in rewritable disks for optical recording applications. Recently, it has also received attention as a candidate for future high storage density non-volatile random access memory, due to its much longer cycle life (∼1013) and fast data access time (∼100ns) compared with the existing Flash memory technology. In this paper, we present thermal conductivity data and models for phase-change GeSbTe material that would be helpful in performance optimization and improvement in the reliability (i.e., enhancement of data rate, cyclability, control of mark-edge jitter) of phase-change-based data storage devices and systems. We perform the thermal characterization of Ge4Sb1Te5 and Ge2Sb2Te5 phase-change materials for the application of optical recording and phase-change memory cell using the techniques of thermoreflectance and electrical resistance thermometry. The limits of lattice and electronic thermal conductivities are investigated to determine their relative contributions as a function of tellurium concentration at different crystalline structures.

scholarly journals Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2685
Author(s):  
Kuo-Yu Hsiang ◽  
Chun-Yu Liao ◽  
Jer-Fu Wang ◽  
Zhao-Feng Lou ◽  
Chen-Ying Lin ◽  
...  
Keyword(s):  
Artificial Intelligence ◽  
Data Storage ◽  
Crystalline Phase ◽  
Material Properties ◽  
Polarization Switching ◽  
Memory Devices ◽  
Potential Candidate ◽  
Model Based ◽  
Emerging Memory ◽  
Stimulation Voltage

Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

scholarly journals On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

2021 ◽  
Vol 15 (3) ◽  
pp. 2170015
Author(s):  
Minh Anh Luong ◽  
Marta Agati ◽  
Nicolas Ratel Ramond ◽  
Jérémie Grisolia ◽  
Yannick Le Friec ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Embedded Memory ◽  
Memory Applications ◽  
Change Material

scholarly journals The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

NANO ◽  
2015 ◽  
Vol 10 (08) ◽  
pp. 1550118 ◽  
Author(s):  
Lei Wang ◽  
Jing Wen ◽  
CiHui Yang ◽  
Shan Gai ◽  
YuanXiu Peng
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Electrical Contact ◽  
Crystal Nucleation ◽  
Access Time ◽  
Storage Device ◽  
Electrical Contact Resistance ◽  
Low Energy Consumption ◽  
Modeling Techniques ◽  
Second Period

Phase-change probe memory using Ge2Sb2Te5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phase-change probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in2 density under pico Joule energy within micro second period.

Structure of Phase Change Materials for Data Storage

2006 ◽  
Vol 96 (5) ◽  
Author(s):  
Zhimei Sun ◽  
Jian Zhou ◽  
Rajeev Ahuja
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

A New Write Caching Algorithm for Solid State Disks

2011 ◽  
Vol 341-342 ◽  
pp. 700-704
Author(s):  
Bai Yi Huang
Keyword(s):  
Solid State ◽  
Data Storage ◽  
Flash Memory ◽  
Theory And Practice ◽  
Solid State Disks ◽  
Storage Technology ◽  
Mechanical Devices ◽  
Storage Technologies ◽  
A Performance

Flash-based solid state disks (SSD) is a performance based data storage technology that optimizes the use of flash-based technology to implement its data storage capabilities compared with mechanically available data storage technologies. It has been argued in theory and practice that SSD devices are better performers compared with mechanical devices. To improve the efficiency of a flash memory SSD device, it is important for it to be designed to be computationally support parallel operations.

Scanning probe-type data storage beyond hard disk drive and flash memory

MRS Bulletin ◽  
2018 ◽  
Vol 43 (5) ◽  
pp. 365-370 ◽  
Author(s):  
Yasuo Cho ◽  
Seungbum Hong
Keyword(s):  
Hard Disk Drive ◽  
Data Storage ◽  
Flash Memory ◽  
Hard Disk ◽  
Disk Drive ◽  
Scanning Probe ◽  
Probe Type ◽  
Type Data ◽  
Image Position

Abstract

Sign in / Sign up

Export Citation Format

Share Document