Dots boost data storage, phase-change revelations, and more

2008 ◽  
Vol 2 (7) ◽  
pp. 402-402
Keyword(s):  
Phase Change ◽  
Data Storage

scholarly journals The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

NANO ◽  
2015 ◽  
Vol 10 (08) ◽  
pp. 1550118 ◽  
Author(s):  
Lei Wang ◽  
Jing Wen ◽  
CiHui Yang ◽  
Shan Gai ◽  
YuanXiu Peng
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Electrical Contact ◽  
Crystal Nucleation ◽  
Access Time ◽  
Storage Device ◽  
Electrical Contact Resistance ◽  
Low Energy Consumption ◽  
Modeling Techniques ◽  
Second Period

Phase-change probe memory using Ge2Sb2Te5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phase-change probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in2 density under pico Joule energy within micro second period.

Structure of Phase Change Materials for Data Storage

2006 ◽  
Vol 96 (5) ◽  
Author(s):  
Zhimei Sun ◽  
Jian Zhou ◽  
Rajeev Ahuja
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

Phase-change materials for rewriteable data storage

2007 ◽  
Vol 6 (11) ◽  
pp. 824-832 ◽  
Author(s):  
Matthias Wuttig ◽  
Noboru Yamada
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

Design Rules for Phase-Change Materials in Data Storage Applications

2011 ◽  
Vol 23 (18) ◽  
pp. 2030-2058 ◽  
Author(s):  
Dominic Lencer ◽  
Martin Salinga ◽  
Matthias Wuttig
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Design Rules

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

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