scholarly journals Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical–Mechanical-Planarization

2021 ◽  
Vol 11 (22) ◽  
pp. 10872
Author(s):  
Gi-Ppeum Jeong ◽  
Young-Hye Son ◽  
Jun-Seong Park ◽  
Pil-Su Kim ◽  
Man-Hyup Han ◽  
...  
Keyword(s):  
Corrosion Inhibitor ◽  
Fenton Reaction ◽  
Chemical Mechanical Planarization ◽  
Three Dimensional ◽  
Random Access ◽  
Film Surface ◽  
Corrosion Current ◽  
Chemical Oxidation ◽  
Cross Point ◽  
Protonated Amine

A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical–mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H2O2. The chemical oxidation degree of GeO2, Sb2O3, and TeO2 evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge1Sb4Te5 film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge1Sb4Te5 film surface after CMP; i.e., the corrosion current of the Ge1Sb4Te5 film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge1Sb4Te5 film surface CMP slurry could achieve an almost recess-free Ge1Sb4Te5 film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP.

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

ACS Nano ◽  
2013 ◽  
Vol 7 (3) ◽  
pp. 2320-2325 ◽  
Author(s):  
Shimeng Yu ◽  
Hong-Yu Chen ◽  
Bin Gao ◽  
Jinfeng Kang ◽  
H.-S. Philip Wong
Keyword(s):  
Resistive Switching ◽  
Three Dimensional ◽  
Random Access ◽  
Random Access Memory ◽  
Cost Effective ◽  
Access Memory ◽  
Cross Point

scholarly journals Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3296
Author(s):  
Seong-In Kim ◽  
Gi-Ppeum Jeong ◽  
Seung-Jae Lee ◽  
Jong-Chan Lee ◽  
Jun-Myeong Lee ◽  
...  
Keyword(s):  
Fenton Reaction ◽  
Chemical Mechanical Planarization ◽  
Film Surface ◽  
Sio2 Film ◽  
Surface Chemical ◽  
H2o2 Decomposition ◽  
Surface Polishing ◽  
Reaction Acceleration ◽  
Scaling Down ◽  
Stability Enhancement

For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive (i.e., ZrO2) dispersant stability in the CMP slurry by adding a scavenger to suppress the Fenton reaction. To enhance the ZrO2 abrasive dispersant stability, a scavenger with protonate-phosphite ions was designed to suppress the time-dependent Fenton reaction. The ZrO2 abrasive dispersant stability (i.e., lower H2O2 decomposition rate and longer H2O2 pot lifetime) linearly and significantly increased with scavenger concentration. However, the corrosion magnitude on the W-film surface during CMP increased significantly with scavenger concentration. By adding a scavenger to the CMP slurry, the radical amount reduction via Fenton-reaction suppression in the CMP slurry and the corrosion enhancement on the W-film surface during CMP performed that the W-film surface polishing rate decreased linearly and notably with increasing scavenger concentration via a chemical-dominant CMP mechanism. Otherwise, the SiO2-film surface polishing rate peaked at a specific scavenger concentration via a chemical and mechanical-dominant CMP mechanism. The addition of a corrosion inhibitor with a protonate-amine functional group to the W-film surface CMP slurry completely suppressed the corrosion generation on the W-film surface during CMP without a decrease in the W- and SiO2-film surface polishing rate.

Effects of Additives in KOH Based Electrolytes on Cu ECMP

2007 ◽  
Vol 991 ◽  
Author(s):  
Tae-Young Kwon ◽  
In-Kwon Kim ◽  
Jin-Goo Park
Keyword(s):  
Citric Acid ◽  
Applied Voltage ◽  
Counter Electrode ◽  
Corrosion Potential ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Corrosion Current ◽  
Dynamic State ◽  
Static State ◽  
Potentiodynamic Curves

ABSTRACTThe purpose of this study was to characterize KOH based electrolytes and effects of additives on electro-chemical mechanical planarization. The electrochemical mechanical polisher was made to measure the potentiodynamic curve and removal rate of Cu. The potentiodynamic curves were measured in static and dynamic states in investigated electrolytes using a potentiostat. Cu disk of 2 inch was used as a working electrode and Pt electroplated platen was used as a counter electrode. KOH was used as the electrolyte. H2O2 and citric acid were used as additives for the ECMP of Cu. In static and dynamic potentiodynamic measurements, the corrosion potential decreased and corrosion current increased as a function of KOH concentration. In dynamic state, different potentiodynamic curve was obtained when compared to the static state. The current density did not decrease in passivation region by mechanical polishing effect. The static etch and removal rate were measured as function of KOH concentration and applied voltage. In ECMP system, polishing was performed at 30 rpm and 1 psi. The removal rate was about 60 nm/min at 0.3 V when 5 wt% KOH was used. Also, the effect of additive was investigated in KOH based electrolyte on removal rates. As a result, The removal rate was increased to 350 nm/min when 5wt% KOH, 5vol% H2O2, 0.3 M citric acid were used.

scholarly journals Involvement of a local Fenton reaction in the reciprocal modulation by O2 of the glucagon-dependent activation of the phosphoenolpyruvate carboxykinase gene and the insulin-dependent activation of the glucokinase gene in rat hepatocytes

1998 ◽  
Vol 335 (2) ◽  
pp. 425-432 ◽  
Author(s):  
Thomas KIETZMANN ◽  
Torsten PORWOL ◽  
Karl ZIEROLD ◽  
Kurt JUNGERMANN ◽  
Helmut ACKER
Keyword(s):  
Hydroxyl Radical ◽  
Hydroxyl Radicals ◽  
Fenton Reaction ◽  
Phosphoenolpyruvate Carboxykinase ◽  
Gene Activation ◽  
Three Dimensional ◽  
Rat Hepatocytes ◽  
Confocal Laser ◽  
Radical Scavenger ◽  
Insulin Dependent

H2O2 mimicked the action of periportal pO2 in the modulation by O2 of the glucagon-dependent activation of the phosphoenolpyruvate carboxykinase (PCK) gene and the insulin-dependent activation of the glucokinase (GK) gene. H2O2 can be converted in the presence of Fe2+ in a Fenton reaction into hydroxyl anions and hydroxyl radicals (•OH). The hydroxyl radicals are highly reactive and might interfere locally with transcription factors. It was the aim of the present study to investigate the role of and to localize such a Fenton reaction. Hepatocytes cultured for 24 h were treated under conditions mimicking periportal or perivenous pO2 with glucagon or insulin plus the iron chelator desferrioxamine (DSF) or the hydroxyl radical scavenger dimethylthiourea (DMTU) to inhibit the Fenton reaction. PCK mRNA was induced by glucagon maximally under conditions of periportal pO2 and half-maximally under venous pO2. GK mRNA was induced by insulin with reciprocal modulation by O2. DSF and DMTU reduced the induction of PCK mRNA to about half-maximal and increased the induction of GK mRNA to maximal under both O2 tensions. Hydroxyl radical formation was maximal under arterial pO2. Perivenous pO2, DSF and DMTU each decreased the formation of •OH to about 70% of control. The Fenton reaction could be localized in a perinuclear space by confocal laser microscopy and three-dimensional reconstruction techniques. In the same compartment, iron could be detected by electron-probe X-ray microanalysis. Thus a local Fenton reaction is involved in the O2 signalling, which modulated the glucagon- and insulin-dependent PCK gene and GK gene activation.

scholarly journals 3D DNA structural barcode copying and random access

2020 ◽  
Author(s):  
Filip Bošković ◽  
Alexander Ohmann ◽  
Ulrich F. Keyser ◽  
Kaikai Chen
Keyword(s):  
Data Storage ◽  
Single Molecule ◽  
Self Assembly ◽  
Large Scale ◽  
Three Dimensional ◽  
Random Access ◽  
Scale Production ◽  
Digital Information ◽  
Dna Nanostructures ◽  
Large Scale Production

AbstractThree-dimensional (3D) DNA nanostructures built via DNA self-assembly have established recent applications in multiplexed biosensing and storing digital information. However, a key challenge is that 3D DNA structures are not easily copied which is of vital importance for their large-scale production and for access to desired molecules by target-specific amplification. Here, we build 3D DNA structural barcodes and demonstrate the copying and random access of the barcodes from a library of molecules using a modified polymerase chain reaction (PCR). The 3D barcodes were assembled by annealing a single-stranded DNA scaffold with complementary short oligonucleotides containing 3D protrusions at defined locations. DNA nicks in these structures are ligated to facilitate barcode copying using PCR. To randomly access a target from a library of barcodes, we employ a non-complementary end in the DNA construct that serves as a barcode-specific primer template. Readout of the 3D DNA structural barcodes was performed with nanopore measurements. Our study provides a roadmap for convenient production of large quantities of self-assembled 3D DNA nanostructures. In addition, this strategy offers access to specific targets, a crucial capability for multiplexed single-molecule sensing and for DNA data storage.

scholarly journals Calcium D-Pantothenate as Green Corrosion Inhibitor on Mild Steel in 240 ppm NaCl Solution

2019 ◽  
Vol 9 (2S2) ◽  
pp. 435-442
Keyword(s):  
Mild Steel ◽  
Corrosion Inhibitor ◽  
Potentiodynamic Polarization ◽  
Density Functional ◽  
Electrochemical Impedance ◽  
Corrosion Current ◽  
Nacl Solution ◽  
Functional Theory ◽  
Vitamin B5 ◽  
Quantum Chemical Data

Corrosion inhibition of mild steel in 240 ppm NaCl solution using Calcium D-Pantothenate (Vitamin B5 ) as corrosion inhibitor is studied using electrochemical impedance, potentiodynamic polarization and weight loss studies. From the potentiodynamic polarization studies, icorr (corrosion current density) decreases with increasing the concentration of vitamin B5 (VB5 ). The CR (corrosion rate) decreases and the IE (inhibition efficiency) of VB5 increases on increasing the concentration of VB5 .Surface investigation using SEM, EDX spectra, UV-Vis, FTIR, electrochemical impedance, potentiodynamic polarization and adsorption isotherm parameter of VB5 in 240 ppm NaCl solution shows that VB5 can act asworthy corrosion inhibitors. Quantum chemical data obtained from density functional theory (DFT) calculations also agreed with the experimental outcomes.

THERMAL EXPANSION OF PHASE-CHANGE RANDOM ACCESS MEMORY CELLS

2008 ◽  
Vol 1072 ◽  
Author(s):  
Jianming Li ◽  
L.P. Shi ◽  
H.X. Yang ◽  
K.G. Lim ◽  
X.S. Miao ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Phase Change ◽  
Electrical Power ◽  
Thermal Strain ◽  
Three Dimensional ◽  
Amorphous State ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Three Dimensional Finite Element

ABSTRACTThree-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at the interfaces between electrodes and phase change layer and it is significantly larger than that within the phase change layer. It has been found that the peak thermal stress is linearly related to the voltage of electrical pulse in the reset process but once amorphous state is produced in the cell, a nonlinear relationship between thermal stress and electrical power exists. This paper reported the change of thermal stress during set process. It was found that the stress decreases significantly due to the amorphous active region during set processes.

Epithelial cell adhesion on films mimicking surface of polymeric scaffolds of artificial urethra compared to molecular modeling of integrin binding

2019 ◽  
Vol 34 (3) ◽  
pp. 280-290 ◽  
Author(s):  
Jakub Kollar ◽  
Andrea Morelli ◽  
Federica Chiellini ◽  
Stanislav Miertus ◽  
Dusan Bakos ◽  
...  
Keyword(s):  
Hyaluronic Acid ◽  
Cell Adhesion ◽  
Epithelial Cell ◽  
Polymer Films ◽  
Rational Design ◽  
Computational Study ◽  
Transmembrane Protein ◽  
Molecular Mechanic ◽  
Three Dimensional ◽  
Film Surface

In this study, a combined experimental and computational study of long-term human bladder epithelial cell line HBLAK adhesion and proliferation on five different polymeric surfaces, namely hyaluronic acid, amylose, collagen, polyhydroxybutyrate, and polylactic acid, was performed with the goal to understand the nature of the attraction between various surface materials and a simplified model of the cell surface (transmembrane protein integrin). These biodegradable polymers are frequently used as scaffolds for tissue engineering. During formation of the new tissue, the scaffold polymers are gradually replaced by the natural extracellular matrix of the proliferating cells. Cell adhesion and proliferation experiments were carried out employing thin polymer films prepared by solvent casting while for the computational approach three-dimensional molecular models of layers of ordered polymeric fibers were used as quasi-planar nano-sized models of polymeric surface patches. Experimental results indicated a good capability of amylose, polyhydroxybutyrate, and hyaluronic acid polymer films to foster cell adhesion. Proliferation experiment, carried out by incubating cells with the investigated polymer films for 72 h, showed that all the investigated polymers are able to sustain a good proliferation of HBLAK cells almost comparable to plain glass. Computational estimate of molecular mechanic interaction energies between three-dimensional models of polymeric films and the collagen-binding α2 I domain of the cell adhesion receptor integrin α2β1 confirmed elevated affinity to amylose and polyhydroxybutyrate that is related to higher polarity of function groups on the film surface as documented by the maps of molecular electrostatic potential. This combined experimental and modeling approach can contribute to rational design and surface modifications of polymeric material suitable for forming the scaffolds of human urethra that can be effectively colonized by stem cells.

scholarly journals Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1634
Author(s):  
Batyrbek Alimkhanuly ◽  
Sanghoek Kim ◽  
Lok-won Kim ◽  
Seunghyun Lee
Keyword(s):  
Random Access ◽  
Cost Effective ◽  
Metal Electrode ◽  
Electromagnetic Analysis ◽  
Resistive Memory ◽  
Cross Point ◽  
Device Scaling ◽  
Noise Margin ◽  
Computing Platforms ◽  
Switching Characteristics

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms.

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