scholarly journals Deposition and Characterization of Innovative Bulk Heterojunction Films Based on CuBi2O4 Nanoparticles and Poly(3,4 ethylene dioxythiophene):Poly(4-styrene sulfonate) Matrix

2021 ◽  
Vol 11 (19) ◽  
pp. 8904
Author(s):  
María Elena Sánchez-Vergara ◽  
América R. Vázquez-Olmos ◽  
Leon Hamui ◽  
Alejandro Rubiales-Martínez ◽  
Ana L. Fernández-Osorio ◽  
...  
Keyword(s):  
Charge Transport ◽  
Bulk Heterojunction ◽  
Composite Films ◽  
Average Crystallite Size ◽  
Polymer Interfaces ◽  
Styrene Sulfonate ◽  
Current Voltage ◽  
Saturation Region ◽  
Semiconductor Behavior ◽  
Electric Behavior

This work presents the deposition and study of the semiconductor behavior of CuBi2O4 nanoparticles (NPs) with an average crystallite size of 24 ± 2 nm embedded in poly(3,4 ethylene dioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) films. The CuBi2O4 NP bandgap was estimated at 1.7 eV, while for the composite film, it was estimated at 2.1 eV, due to PEDOT:PSS and the heterojunction between the polymer and the NPs. The charge transport of the glass/ITO/PEDOT:PSS-CuBi2O4 NP/Ag system was studied under light and dark conditions by means of current–voltage (I–V) characteristic curves. In natural-light conditions, the CuBi2O4 NPs presented electric behavior characterized by three different mechanisms: at low voltages, the behavior follows Ohm’s law; when the voltage increases, charge transport occurs by diffusion between the NP–polymer interfaces; and at higher voltages, it occurs due to the current being dominated by the saturation region. Due to their crystalline structure, their low bandgap in films and the feasibility of integrating them as components in composite films with PEDOT:PSS, CuBi2O4 NPs can be used as parts in optoelectronic devices.

Solar Cell Manufacturing Method with the Structure of the Bulk Heterojunction Based on Organic Semiconductors with a Direct Architecture

2016 ◽  
Vol 845 ◽  
pp. 224-227 ◽  
Author(s):  
Danila Saranin ◽  
Marina Orlova ◽  
Sergey Didenko ◽  
Oleg Rabinovich ◽  
Andrey Kryukov
Keyword(s):  
Solar Cells ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Research Output ◽  
Bulk Heterojunction ◽  
Organic Basis ◽  
Manufacturing Method ◽  
Current Voltage ◽  
Current Voltage Characteristics

This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.

Novel Regiospecific MDMO−PPV Copolymer with Improved Charge Transport for Bulk Heterojunction Solar Cells

2004 ◽  
Vol 108 (17) ◽  
pp. 5235-5242 ◽  
Author(s):  
Attila J. Mozer ◽  
Patrick Denk ◽  
Markus C. Scharber ◽  
Helmut Neugebauer ◽  
N. Serdar Sariciftci ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transport ◽  
Bulk Heterojunction ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells

Modeling the Effect of Annealing and Regioregularity on Electron and Hole Transport Characteristics of Bulk Heterojunction Organic Photovoltaic Devices

2010 ◽  
Vol 1270 ◽  
Author(s):  
Shabnam Shambayati ◽  
Bobak Gholamkhass ◽  
Soheil Ebadian ◽  
Steven Holdcroft ◽  
Peyman Servati
Keyword(s):  
Annealing Time ◽  
Electron Mobility ◽  
Bulk Heterojunction ◽  
Acid Methyl Ester ◽  
Hole Mobility ◽  
Phase Segregation ◽  
Hole Transport ◽  
Trap States ◽  
Current Voltage ◽  
Steep Decline

AbstractIn this study, the dark current-voltage characteristics of electron-only and hole-only poly(3-hexyl thiophene) (P3HT):[6,6]-phenyl C61-butyric acid methyl ester (PCBM) as a function of regioregularity (RR) and annealing time is investigated using the mobility edge (ME) model. This model is used to analyze the degradation of electron and hole mobilities as a function of annealing time for 93%-RR and 98%-RR P3HT:PCBM devices. The hole mobility is almost unchanged by the RR nature of P3HT and thermal annealing. The electron mobility, however, behaves differently after annealing. The electron mobility of 98%-RR devices, which is initially higher than that of the 93%-RR devices, experiences a steep decline with annealing. Based on ME analysis, this is due to an increase in trap states in the exponential tail caused by phase segregation of solid state blends of 98%-RR polymer and PCBM. The electron mobility of 93%-RR devices increases with annealing due to an optimization of nano-phase separated morphology.

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Mechanical Properties of Polymer–Fullerene Bulk Heterojunction Films: Role of Nanomorphology of Composite Films

2017 ◽  
Vol 29 (9) ◽  
pp. 3954-3961 ◽  
Author(s):  
Jae-Han Kim ◽  
Jonghyeon Noh ◽  
Hyesun Choi ◽  
Jung-Yong Lee ◽  
Taek-Soo Kim
Keyword(s):  
Mechanical Properties ◽  
Bulk Heterojunction ◽  
Composite Films

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

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