scholarly journals Open Localization in 3D Package with TSV Daisy Chain Using Magnetic Field Imaging and High-Resolution Three-Dimensional X-ray Microscopy

2021 ◽  
Vol 11 (17) ◽  
pp. 8148
Author(s):  
Yuan Chen ◽  
Ping Lai ◽  
Hong-Zhong Huang ◽  
Peng Zhang ◽  
Xiaoling Lin
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Failure Analysis ◽  
Complex Structure ◽  
Three Dimensional ◽  
X Ray ◽  
Defect Localization ◽  
Magnetic Field Imaging ◽  
3D Package ◽  
Field Imaging

With the development of 3D integrated packaging technology, failure analysis is facing more and more challenges. Defect localization in a 3D package is a key step of failure analysis. The complex structure and materials of 3D package devices demand non-destructive defect localization technology for full packages. Magnetic field imaging and three-dimensional X-ray technology are not affected by package material or form. They are effective methods to realize defect localization on 3D packages. In this paper, magnetic field imaging and high-resolution three-dimensional X-ray microscopy were used to localize the open defect in a 3D package with a TSV daisy chain. A two-probe RF method in magnetic field imaging was performed to resolve isolation of the defect difficulties resulting from many different branches of TSV daisy chains. Additionally, a linear decay method was used to target sub-micron resolution at a long working distance. Multiple partition scans from a high-resolution 3D X-ray microscopy with a two-stage magnification structure were used to achieve sub-micron resolution. The open location identified by magnetic field imaging was consistent with that identified by a three-dimensional X-ray microscope. The opening was located on the top metal in the proximity of the fifth via. Physical failure analysis revealed the presence of a crack in the top metal at the opening location.

Non-Destructive 3D Failure Analysis Work Flow for Electrical Failure Analysis in Complex 2.5D-Based Devices Combining 3D Magnetic Field Imaging and 3D X-Ray Microscopy

2018 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Alex Jeffers ◽  
Florencia Rusli ◽  
Bernice Zee ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
X Ray ◽  
Electrical Failure ◽  
Magnetic Field Imaging ◽  
3D Stacking ◽  
Field Imaging

Abstract Industry and market requirements keep imposing demands in terms of tighter transistor packing, die and component real estate management on the package, faster connections and expanding functionality. This has forced the semiconductor industry to look for novel packaging approaches to allow for 3D stacking of transistors (the so called “More than Moore”). This complex 3D geometry, with an abundance of opaque layers and interconnects, presents a great challenge for failure analysis (FA). Three-dimensional (3D) magnetic field imaging (MFI) has proven to be a natural, useful technique for non-destructively mapping 3D current paths in devices that allows for submicron vertical resolution. 3D X-ray microscopy (XRM) enables 3D tomographic imaging of advanced IC packages without the need to destroy the device. This is because it employs both geometric and optical image magnifications to achieve high spatial resolution. In this paper, we propose a fully nondestructive, 3D-capable workflow for FA comprising 3D MFI and 3D XRM. We present an application of this novel workflow to 3D defect localization in a complex 2.5D device combining high bandwidth memory (HBM) devices and an application specific integrated circuit (ASIC) unit on a Si interposer with a signal pin electrical short failure.

Nondestructive Visualizations of Short Circuits in Ball Grid Arrays by Magnetic Field Imaging and Three-Dimensional X-Ray Microscopy

2016 ◽  
Author(s):  
Kazuhiro Suzuki ◽  
Masayoshi Tsutsumi ◽  
Masako Saito ◽  
Makoto Toda ◽  
Kouzou Yamamoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Short Circuit ◽  
Three Dimensional ◽  
Optical Beam ◽  
Circuit Board ◽  
Reconstruction Method ◽  
Resistance Change ◽  
X Ray ◽  
Magnetic Field Imaging ◽  
Field Imaging

Abstract It is important to locate a short circuit failure in semiconductor devices, and powerful tools such as lock-in thermography and optical beam induced resistance change are used. However, those tools are inappropriate for investigating the device covered with the impenetrable substance to light, because the covering substance blocks the light from the defect point in the device and also prevents the optical beam from outside of the device. We demonstrate that a subsurface short circuit in a ball grid array device can be located by magnetic field imaging (MFI) and the electromagnetic field reconstruction method (EM-FRM), which makes it possible to calculate a magnetic field in the immediate vicinity of the current that is the source of the field from a measured magnetic field at a distance. Moreover, we visualize the short circuit by three-dimensional X-ray microscopy. MFI is also applied to visualization of a magnetic field created by a current flowing inside a printed circuit board and a light emitting diode package.

Magnetic Field Imaging on Stacked Flash Memories by Laser Probing and SQUID Scanning

2017 ◽  
Author(s):  
K. Sanchez ◽  
G. Bascoul ◽  
F. Infante ◽  
N. Courjault ◽  
T. Nakamura
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Two Dimensions ◽  
Analysis Tool ◽  
Active Device ◽  
Current Path ◽  
3D Packaging ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Abstract Magnetic field imaging is a well-known technique which gives the possibility to study the internal activity of electronic components in a contactless and non-invasive way. Additional data processing can convert the magnetic field image into a current path and give the possibility to identify current flow anomalies in electronic devices. This technique can be applied at board level or device level and is particularly suitable for the failure analysis of complex packages (stacked device & 3D packaging). This approach can be combined with thermal imaging, X-ray observation and other failure analysis tool. This paper will present two different techniques which give the possibility to measure the magnetic field in two dimensions over an active device. Same device and same level of current is used for the two techniques to give the possibility to compare the performance.

Magnetic Field Imaging for Non-Destructive 3D Package Fault Isolation

2014 ◽  
Vol 2014 (1) ◽  
pp. 000635-000640
Author(s):  
Jan Gaudestad ◽  
David Vallett
Keyword(s):  
Magnetic Field ◽  
Product Life Cycle ◽  
Fault Isolation ◽  
Product Returns ◽  
Magnetic Field Imaging ◽  
The One ◽  
In The Beginning ◽  
3D Package ◽  
Non Destructive ◽  
Field Imaging

While microelectronic packages are becoming more and more advanced, the need for non-destructive Electrical Fault Isolation (EFI) becomes ever more critical for the entire product life-cycle ranging from the chip development yield enhancements to failures on product returns. In the beginning of product development, short failures are often the main issue while opens and cracks become the reliability problems after the product reaches the marketplace. In this paper we present Magnetic Field Imaging (MFI) as the one technique that can find all static defects: shorts, leakages and opens in a true non-destructive way.

An experimental study on characterizing damage and fracture of a rock-like material based on three-dimensional magnetic field imaging

2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Wenping Yue ◽  
Mingyang Yang
Keyword(s):  
Magnetic Field ◽  
Imaging System ◽  
Three Dimensional ◽  
Fracture Pattern ◽  
Content Type ◽  
Damage And Fracture ◽  
Magnetic Marker ◽  
Magnetic Field Imaging ◽  
The Magnetic Field ◽  
Field Imaging

Purpose The results showed that the use of a magnetic marker could relatively accurately reflect the fracture pattern inside the rock-like material (RLM). Design/methodology/approach This study investigated the internal structure and fracture pattern of a fractured RLM. Magnetized iron oxide powder, which was used as a magnetic marker, was mixed with water and glue to form a magnetic slurry, which was subsequently injected into a fractured RLM. After the magnetic slurry completely filled the cracks inside the RLM and became cemented, the distribution and magnitude of the magnetic field inside the RLM were determined using a three-dimensional (3D) magnetic field imaging system. Findings A model for determining the magnetic field strength was developed using MATLAB. Originality/value This model of 3D magnetic will further be used as a finite element tool to simulate and image cracks inside the rock.

scholarly journals A scanning Hall probe microscope for high resolution, large area, variable height magnetic field imaging

2016 ◽  
Vol 87 (11) ◽  
pp. 113702 ◽  
Author(s):  
Gorky Shaw ◽  
R. B. G. Kramer ◽  
N. M. Dempsey ◽  
K. Hasselbach
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Hall Probe ◽  
Large Area ◽  
Probe Microscope ◽  
Magnetic Field Imaging ◽  
Field Imaging

High-resolution magnetic field imaging with a nitrogen-vacancy diamond sensor integrated with a photonic-crystal fiber

2016 ◽  
Vol 41 (3) ◽  
pp. 472 ◽  
Author(s):  
I. V. Fedotov ◽  
S. M. Blakley ◽  
E. E. Serebryannikov ◽  
P. Hemmer ◽  
M. O. Scully ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Photonic Crystal ◽  
High Resolution ◽  
Photonic Crystal Fiber ◽  
Nitrogen Vacancy ◽  
Crystal Fiber ◽  
Magnetic Field Imaging ◽  
Field Imaging

A Novel X-Ray Microtomography System with High Resolution and Throughput for Non-Destructive 3D Imaging of Advanced Packages

2004 ◽  
Author(s):  
David Scott ◽  
Fred Duewer ◽  
Shashi Kamath ◽  
Alan Lyon ◽  
David Trapp ◽  
...  
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Tomographic Reconstruction ◽  
Three Dimensional ◽  
Tomographic Imaging ◽  
Fault Isolation ◽  
X Ray ◽  
Sample Rotation ◽  
Reconstruction Methods ◽  
Advanced Packaging

Abstract X-ray microscopy has the potential to solve many failure analysis problems associated with advanced package technologies because of its ability to non-destructively inspect advanced multi-layer package designs. In addition, x-ray imaging has the potential to perform fault isolation in 3D using well-established tomographic reconstruction methods. The ability to perform high-resolution, artifact free tomographic reconstructions will be critical to the Advanced Packaging Failure Analysis community. This article discusses the requirements for a high-resolution, three-dimensional tomographic imaging microscope and shows how these requirements pose a problem for conventional projection based x-ray microscopes, specifically the requirement to place the sample in near contact with the x-ray source. The article then discusses the results from the Micro-XCT, an x-ray tomographic imaging microscope designed by Xradia, Inc., whose unique design allows for the required 180 degrees of sample rotation while simultaneously maintaining resolutions as high as 1 micrometer.

3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

2014 ◽  
Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Current Location ◽  
Geometrical Information ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

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