scholarly journals Investigation on the Effect of Femtosecond Laser Induced Spin Transfer Torque of GdFeCo Alloy

2021 ◽  
Vol 11 (14) ◽  
pp. 6501
Author(s):  
Haozhe Huang ◽  
Haiwei Wang ◽  
Zhihao Zeng ◽  
Rongyao Wang ◽  
Xinyu Zhang ◽  
...  
Keyword(s):  
Data Storage ◽  
Current Density ◽  
Magnetization Reversal ◽  
Spin Current ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Magnetization Switching ◽  
Switching Speed ◽  
Novel Approach

All-optical magnetic switching (AOS) provides a novel approach to improve writing ability and energy efficiency compared to those utilized in the mainstream magnetic data storage products. Rare earth-transition metals (RE-TM) exhibit extremely fast magnetization switching induced by one single incident linearly polarized laser pulse; however, the mechanism is still ambiguous. Here, we show by atomistic spin simulation that the laser induced spin transfer torque dominates the magnetization reversal of Fe sublattice in Gd25Fe75 alloy, and that the switching speed of Gd25Fe75 alloy is relevant to the amount of spin current. This implies that a possible helicity independent mechanism underlies the RE-TM alloy AOS process. We also find that the greater the spin current density the faster the magnetization switching, and the time magnetization reversal of Gd and Fe takes is also affected by the spin current density.

scholarly journals DATA STORAGE: REVIEW OF HEUSLER COMPOUNDS

SPIN ◽  
2012 ◽  
Vol 02 (04) ◽  
pp. 1230006 ◽  
Author(s):  
ZHAOQIANG BAI ◽  
LEI SHEN ◽  
GUCHANG HAN ◽  
YUAN PING FENG
Keyword(s):  
Data Storage ◽  
Giant Magnetoresistance ◽  
Functional Materials ◽  
Recent Decade ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Heusler Compounds ◽  
Storage Devices ◽  
The Family

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

scholarly journals Study of A Phenomenon STT (Spin Transfer Torque) on the Material La0.7Sr0.3MnO3 Shaped Nanowire Using Micromagnetic Simulation

2017 ◽  
Vol 18 (2) ◽  
pp. 133
Author(s):  
Lutfi Rohman ◽  
L. Musyarofah ◽  
Endhah Purwandari
Keyword(s):  
Domain Wall ◽  
Total Energy ◽  
Current Density ◽  
Electron Flow ◽  
Spin Current ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Simulation Research ◽  
Total Energy Analysis ◽  
And Control

STT (Spin Transfer Torque) can be referred to as a process of manipulation and control of spin current in the field of spintronics. When the material is ferromagnetic nanowire La0.7Sr0.3MnO3injected currents will move the domain wall with accompanying changes of spin currents. In mikromagnetik simulation shows that the application is capable of producing flow velocity or pressure of domain wall in the direction of electron flow. The domain wall pressure generating magnetization changes with increasing current density occurs. To that end, the simulation research was done in order to obtain the effect of the injection of electric current to the magnetization of the material. This phenomenon is simulated by modeling the material into the 3D geometry. The greater the current density is given the domain wall velocity or pressure on the nanowire faster so that the magnetization process is also faster. Changes in the velocity of the fastest domain wall is obtained when the material is injected with a current density as well as M-t get a graph showing oscillation pattern that is denser when the current is increased. Furthermore, the total energy analysis with variations in size diameter of 10 nm, 20 nm and 30 nm. The results show that with increasing diameter, total energy tends to increase. Keywords: spin transfer torque, La0.7Sr0.3MnO3, magnetisation, domain wall, ferromagnetic

Magnetic Recording Assisted by Spin-Transfer-Torque-Induced Magnetization Reversal and Dynamics

2021 ◽  
Author(s):  
Wenyu Chen ◽  
Zhenyao Tang ◽  
Akimasa Kaizu ◽  
Shohei Kawasaki ◽  
Tetsuya Roppongi ◽  
...  
Keyword(s):  
Magnetic Recording ◽  
Magnetization Reversal ◽  
Spin Transfer Torque ◽  
Spin Transfer

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

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