Landau-Lifshitz-Bloch-Slonczewski simulations of the spin-transfer-torque driven magnetization switching assisted by Joule heating

2013 ◽  
Vol 102 (2) ◽  
pp. 022405 ◽  
Author(s):  
Eugen Oniciuc ◽  
Laurentiu Stoleriu ◽  
Alexandru Stancu
Keyword(s):  
Joule Heating ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Switching

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Fast Magnetization Switching by Linear Vertical Microwave-Assisted Spin-Transfer Torque

2012 ◽  
Vol 12 (9) ◽  
pp. 7460-7463 ◽  
Author(s):  
Congpu Mu ◽  
Weiwei Wang ◽  
Haiyan Xia ◽  
Bin Zhang ◽  
Qingfang Liu ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Switching ◽  
Microwave Assisted

Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling

2014 ◽  
Vol 931-932 ◽  
pp. 989-993 ◽  
Author(s):  
Supakorn Harnsoongnoen ◽  
N. Phaengpha ◽  
S. Ritjaroenwattu ◽  
U. Charoen-In ◽  
Apirat Siritaratiwat
Keyword(s):  
Heat Flux ◽  
Finite Element ◽  
Finite Element Modeling ◽  
Joule Heating ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Maximum Temperature ◽  
Element Modeling

This paper reports the Joule heating and Peltier effects in thermoelectric spin-transfer torque MRAMs (TSTT-MRAMs). The simulation was undertaken based on the current-induced magnetization switching at the MgO/CoFe magnetic tunnel junction. Thermal and heat flux distributions of the TSTT-MRAM cells were simulated and analyzed using finite-element modeling. The Joule heating and Peltier effects lead to the increases in the temperature and heat flux distributions at the magnetic tunnel junction (MTJ) as well as the thermoelectric module. The maximum temperature of Peltier effect is higher than Joule heating effect when voltage amplitude below 0.77V. Some practical data for the STT-MRAM were also reported.

CURRENT DRIVEN SWITCHING IN CoPt/Au/CoPt NANOPILLAR WITH INTERFACE ANISOTROPY

2012 ◽  
Vol 26 (10) ◽  
pp. 1250068 ◽  
Author(s):  
P. SABAREESAN ◽  
M. DANIEL
Keyword(s):  
Switching Time ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Free Layer ◽  
Magnetization Switching ◽  
Switching Dynamics ◽  
A Current ◽  
Interface Anisotropy

Current driven magnetization switching dynamics induced by spin-transfer torque in CoPt / Au / CoPt nanopillar device with interface anisotropy is investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation numerically. The switching of magnetization in the free layer CoPt / Au / CoPt nanopillar with a thickness of 3 nm occurs above the threshold current density of 0.84×108 A/cm 2. This reduces to 0.30×108 A/cm 2 when the free CoPt layer of the device has interface anisotropy in it. The presence of interface anisotropy also reduces the magnetization switching time from 8.4 ps to 3.1 ps when the device is operated by a current with a density of 2.78×108 A/cm 2.

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