scholarly journals Near-Field Scanning Millimeter-Wave Microscope Operating Inside a Scanning Electron Microscope: Towards Quantitative Electrical Nanocharacterization

2021 ◽  
Vol 11 (6) ◽  
pp. 2788
Author(s):  
Petr Polovodov ◽  
Didier Théron ◽  
Clément Lenoir ◽  
Dominique Deresmes ◽  
Sophie Eliet ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Millimeter Wave ◽  
Radiation Effects ◽  
Near Field ◽  
Complex Impedance ◽  
Standard Operating Procedure ◽  
Critical Issue ◽  
Transverse Electromagnetic ◽  
Scanning Electron

The main objectives of this work are the development of fundamental extensions to existing scanning microwave microscopy (SMM) technology to achieve quantitative complex impedance measurements at the nanoscale. We developed a SMM operating up to 67 GHz inside a scanning electron microscope, providing unique advantages to tackle issues commonly found in open-air SMMs. Operating in the millimeter-wave frequency range induces high collimation of the evanescent electrical fields in the vicinity of the probe apex, resulting in high spatial resolution and enhanced sensitivity. Operating in a vacuum allows for eliminating the water meniscus on the tip apex, which remains a critical issue to address modeling and quantitative analysis at the nanoscale. In addition, a microstrip probing structure was developed to ensure a transverse electromagnetic mode as close as possible to the tip apex, drastically reducing radiation effects and parasitic apex-to-ground capacitances with available SMM probes. As a demonstration, we describe a standard operating procedure for instrumentation configuration, measurements and data analysis. Measurement performance is exemplarily shown on a staircase microcapacitor sample at 30 GHz.

Near-Field Optical Imaging of Electromigration Damages in Passivated Metal Stripes

1999 ◽  
Vol 571 ◽  
Author(s):  
E. Bonera ◽  
A. Borghesi ◽  
C. Caprile
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Near Field ◽  
Complete Removal ◽  
Metal Structures ◽  
Microscope Imaging ◽  
Scanning Optical Microscopy ◽  
Scanning Electron

AbstractElectromigration is one of the main failure mechanisms limiting the miniaturization of microelectronic devices. As a consequence of the high current densities in the interconnections, hillocks and voids are formed and their evolution can modify the electrical performances of devices till failure. To characterize electromigration damages,. today's failure analysis techniques require removal of the protection passivation to allow scanning electron microscope or focused ion beam microscope imaging, but the removal process itself can damage the surface of the metal stripes. Due to the optical transparency of the passivation, near-field scanning optical microscopy can be used to overcome this problem. We succeeded in obtaining the first near-field images in resolution < 150 nm of electromigration-damaged metal structures without complete removal of the passivation. The latter was thinned to 100 – 200 nm to allow the evanescent waves to reach the metal structures and illuminate a subwavelength zone of the sample. Near-field images show the presence of hillocks and voids of dimensions down to 250 nm which can be due only to electrornigration, and, in this sense, they are more reliable than the usual scanning electron microscope images.

The Alteration of the Pore Spaces in Sandstones

1973 ◽  
Vol 31 ◽  
pp. 210-211
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
The Other ◽  
Coarse Grained ◽  
Depositional Fabric ◽  
Soluble Components ◽  
Scanning Electron ◽  
Shape And Size

The pore spaces in sandstones are the result of the original depositional fabric and the degree of post-depositional alteration that the rock has experienced. The largest pore volumes are present in coarse-grained, well-sorted materials with high sphericity. The chief mechanisms which alter the shape and size of the pores are precipitation of cementing agents and the dissolution of soluble components. Each process may operate alone or in combination with the other, or there may be several generations of cementation and solution.The scanning electron microscope has ‘been used in this study to reveal the morphology of the pore spaces in a variety of moderate porosity, orthoquartzites.

The Broad Applications of the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 20-21
Author(s):  
C. T. Nightingale ◽  
S. E. Summers ◽  
T. P. Turnbull
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Light Microscopy ◽  
Surface Topography ◽  
Great Depth ◽  
Resolving Power ◽  
Depth Of Field ◽  
Pictorial Representations ◽  
Scanning Electron

The ease of operation of the scanning electron microscope has insured its wide application in medicine and industry. The micrographs are pictorial representations of surface topography obtained directly from the specimen. The need to replicate is eliminated. The great depth of field and the high resolving power provide far more information than light microscopy.

Observability of Very Thick Specimen by Using Transmission Scanning Electron Microscope

1971 ◽  
Vol 29 ◽  
pp. 26-27
Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike
Keyword(s):  
Electron Microscope ◽  
Image Quality ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Image Contrast ◽  
Objective Lens ◽  
Thick Specimen ◽  
Transmission Electron ◽  
Scanning Electron

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.

Resolution of a Transmitted Electron Image Formed by A Scanning Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 386-387
Author(s):  
S. Takashima ◽  
H. Hashimoto ◽  
S. Kimoto
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Probe Diameter ◽  
Transmission Electron ◽  
Electron Image ◽  
Conventional Transmission Electron Microscope ◽  
Scanning Electron

The resolution of a conventional transmission electron microscope (TEM) deteriorates as the specimen thickness increases, because chromatic aberration of the objective lens is caused by the energy loss of electrons). In the case of a scanning electron microscope (SEM), chromatic aberration does not exist as the restrictive factor for the resolution of the transmitted electron image, for the SEM has no imageforming lens. It is not sure, however, that the equal resolution to the probe diameter can be obtained in the case of a thick specimen. To study the relation between the specimen thickness and the resolution of the trans-mitted electron image obtained by the SEM, the following experiment was carried out.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

Visualization of Internal Skin Structures with the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 46-47
Author(s):  
Emil Bernstein
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Great Depth ◽  
Hair Follicles ◽  
Depth Of Field ◽  
Pig Skin ◽  
Realistic Picture ◽  
Main Components ◽  
Scanning Electron

An interesting method for examining structures in g. pig skin has been developed. By modifying an existing technique for splitting skin into its two main components—epidermis and dermis—we can in effect create new surfaces which can be examined with the scanning electron microscope (SEM). Although this method is not offered as a complete substitute for sectioning, it provides the investigator with a means for examining certain structures such as hair follicles and glands intact. The great depth of field of the SEM complements the technique so that a very “realistic” picture of the organ is obtained.

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