scholarly journals Influence of the Secondary Ion Beam Source on the Laser Damage Mechanism and Stress Evolution of IBS Hafnia Layers

2020 ◽  
Vol 11 (1) ◽  
pp. 189
Author(s):  
Igor Stevanovic ◽  
Zoltán Balogh-Michels ◽  
Andreas Bächli ◽  
Valentin J. Wittwer ◽  
Thomas Südmeyer ◽  
...  
Keyword(s):  
Ion Beam ◽  
Damage Mechanism ◽  
Amorphous Structure ◽  
Ion Source ◽  
Film Stress ◽  
Maximum Compressive Stress ◽  
Laser Applications ◽  
Ion Energy ◽  
Laser Induced Damage ◽  
Secondary Ion

Ion beam sputtered hafnia is a preferred high index coating material for laser applications. It exhibits a mostly amorphous structure and an adequate laser-induced damage (LIDT) threshold. In this work, we investigated the influence of an assisting ion source on the film stress as well as the LIDT of the sputtered hafnia layers. The stress increases with an increasing ion energy of the assisting ion beam. We identified a maximum compressive stress of 3–3.5 GPa before the film cracks, blisters, and delaminates. Different states of stress lead to different laser-induced damage thresholds and damage morphologies.

Ion Energy/Momentum Effects During Ion Assisted Growth of NbXNY Films

2002 ◽  
Vol 750 ◽  
Author(s):  
M. L. Klingenberg ◽  
J. D. Demaree ◽  
J. K. Hirvonen ◽  
R. Messier
Keyword(s):  
Residual Stress ◽  
Total Energy ◽  
Momentum Transfer ◽  
Tribological Properties ◽  
Energy Deposition ◽  
Ion Beam ◽  
Film Stress ◽  
Ion Energy ◽  
Force Microscopy ◽  
R Ratio

ABSTRACTIn a previous paper, it was shown that the tribological properties of NbxNy thin films produced by ion beam assisted deposition (IBAD) depend strongly on the beam energy and the ion-to-atom (R) ratio. This study was designed to separate ion energy vs. ion momentum effects on film stress, crystalline phase, grain size, morphology, and composition, all of which influence the tribological properties of the films. Inert ion beams (Kr, Ar, and Ne) were used in conjunction with a nitrogen gas backfill to independently control ion energy and ion momentum transfer to NbxNy films. The ion species, energies, and R ratios were chosen to create a matrix of coatings that exhibited the same total energy deposition with different momentum transfer or the same momentum transfer but different total energy deposition. The resultant films were characterized using Rutherford Backscattering Spectroscopy (RBS), x-ray diffraction (XRD), atomic force microscopy (AFM), and residual stress analysis. Crystalline phases and texture, as well as residual stress, were more closely correlated with ion momentum transfer to the coating atoms than with overall ion energy input.

scholarly journals Significance of time-of-flight ion energy spectrum on energy deposition into matter by high-intensity pulsed ion beam

2010 ◽  
Vol 28 (3) ◽  
pp. 429-436 ◽  
Author(s):  
J.P. Xin ◽  
X.P. Zhu ◽  
M.K. Lei
Keyword(s):  
Energy Spectrum ◽  
Kinetic Energy ◽  
Energy Distribution ◽  
High Intensity ◽  
Energy Deposition ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Source ◽  
Ion Current ◽  
Ion Energy

AbstractEnergy deposition by high-intensity pulsed ion beam into a metal target has been studied with time-of-flight (TOF) of ions which can be related to the original ion kinetic energy E0 and the ion mass with $t_{\rm TOF} \propto 1/\sqrt{2E_{0}/m_{i}}$. It is found that the TOF effect has a profound influence on the kinetic energy distribution of implanted ions and subsequent energy deposition process into the target. The HIPIB of mixed H+ and C+ was extracted from a magnetically insulated ion diode at a peak accelerating voltage of 350 kV, leading to an ion current density of 300 A/cm2 at the target. The widespread ion energy spectrum remarkably varied in shape as arriving at the target surface, from the original Gaussian-like of 80-ns duration to a pulse form of a sharp front and a long tail extending to about 140-ns duration. Energy loss of the mixed ions into a Ti target was simulated utilizing a Monte Carlo method. The energy deposition generally showed a shallowing trend and could be divided into two phases proceeded with sequent arrivals of H+ and C+. Note that, the peak value of deposited energy profile appeared at the beginning of mixed ion irradiation phase, other than the phase of firstly arrived H+ with peak kinetic energy and peak ion current. This study indicated that TOF effect of ions greatly affects the HIPIB-matter interaction with a kinetic energy spectrum of impinging ions at the target, noticeably differing from that of original output of the ion source; consequently, the specific energy deposition phenomena of the widespread ion energy can be studied with the TOF correlation of ion energy and ion current, otherwise not obtainable in common cases assuming fixed ion energy distribution in accordance with the original source output.

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

A Secondary Ion Energy Analyzer for Measuring the Degree of Compensation of the Ion Beam Space Charge

2019 ◽  
Vol 62 (5) ◽  
pp. 609-614
Author(s):  
A. S. Belov ◽  
D. A. Chermoshentsev ◽  
S. A. Gavrilov ◽  
O. T. Frolov ◽  
L. P. Nechaeva ◽  
...  
Keyword(s):  
Space Charge ◽  
Ion Beam ◽  
Energy Analyzer ◽  
Ion Energy ◽  
Secondary Ion

Ion beam assisted deposition of Cu(In,Ga)Se2 films for thin film solar cells

2001 ◽  
Vol 668 ◽  
Author(s):  
Gerd Lippold ◽  
Horst Neumann ◽  
Axel Schindler
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Scale Up ◽  
Ion Source ◽  
The Novel ◽  
Ion Energy ◽  
Broad Beam ◽  
Ion Beam Assisted Deposition ◽  
Beam Analysis ◽  
Selenization Process

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.

Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims

1998 ◽  
Vol 4 (S2) ◽  
pp. 650-651 ◽  
Author(s):  
F. A. Stevie ◽  
S. W. Downey ◽  
S. Brown ◽  
T. Shofner ◽  
M. Decker ◽  
...  
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Ion Source ◽  
Comb Structure ◽  
Types Of Information ◽  
20 Nm ◽  
Secondary Ion

The semiconductor industry demands elemental information from ever smaller regions. Two types of information in demand are two dimensional dopant profiles for the MOS transisitor and identification of particles as small as 30 nm diameter. The work of Levi-Setti and others resulted in liquid metal ion source (LMIS) instruments that provided secondary ion mass spectrometry (SIMS) images using Ga+ beams with 20 nm lateral resolution. It is now possible to purchase focused ion beam (FIB) systems with 5 nm beam capability and SIMS detection.The application of LMIS SIMS to meet semiconductor demands has been pursued in our laboratory with a FEI-800 FIB. SIMS imaging of semiconductor patterns after etch has shown the ability to identify boron and carbon contamination. Figure 1 shows boron in a comb structure after a BC13 etch. The boron can be shown to be removed by a cleaning step.

scholarly journals High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument withIn SituAFM

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
James A. Whitby ◽  
Fredrik Östlund ◽  
Peter Horvath ◽  
Mihai Gabureac ◽  
Jessica L. Riesterer ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
High Spatial Resolution ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Source ◽  
New Instrument ◽  
Secondary Ion

We describe the design and performance of an orthogonal time-of-flight (TOF) secondary ion mass spectrometer that can be retrofitted to existing focused ion beam (FIB) instruments. In particular, a simple interface has been developed for FIB/SEM instruments from the manufacturer Tescan. Orthogonal extraction to the mass analyser obviates the need to pulse the primary ion beam and does not require the use of monoisotopic gallium to preserve mass resolution. The high-duty cycle and reasonable collection efficiency of the new instrument combined with the high spatial resolution of a gallium liquid metal ion source allow chemical observation of features smaller than 50 nm. We have also demonstrated the integration of a scanning probe microscope (SPM) operated as an atomic force microscope (AFM) within the FIB/SEM-SIMS chamber. This provides roughness information, and will also allow true three dimensional chemical images to be reconstructed from SIMS measurements.

scholarly journals Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam

PLoS ONE ◽  
2021 ◽  
Vol 16 (6) ◽  
pp. e0253870
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Ion Beam ◽  
Energy Levels ◽  
Significant Proportion ◽  
Ion Source ◽  
Low Energy ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Ion Energy ◽  
Fragment Ions

Tetramethyltin was decomposed in an ion source and the fragment ions produced were identified using a low-energy mass-selected ion beam machine. Dominant fragment ions were found to be H+, CH2+, and Sn+. Subsequently, fragment ions were mass-selected. The mass spectrum of the selected ions indicated that only a single peak appeared at the mass number of 120 u, being suggestive of the presence of 120Sn+ ions. The ion energy was set at the range of 20–100 eV. The Sn+ ion beam was irradiated to a Si substrate, and a film was then found deposited on the substrate after the ion beam irradiation. An X-ray diffraction measurement showed that the film obtained was metallic Sn. Then, the Sn+ ion beam was irradiated to a quartz crystal microbalance substrate. We found that most of the irradiated Sn+ ions were adhered to the substrate, at the ion energy levels of 25 and 58 eV, producing the Sn film, whereas a 107 eV Sn+ beam caused a significant proportion of Sn atoms in the film to detach from the substrate, probably due to sputtering.

scholarly journals A study of the parameters of particles ejected from a laser plasma

2004 ◽  
Vol 22 (4) ◽  
pp. 461-467 ◽  
Author(s):  
D. DORIA ◽  
A. LORUSSO ◽  
F. BELLONI ◽  
V. NASSISI ◽  
L. TORRISI ◽  
...  
Keyword(s):  
Ion Beam ◽  
Target Surface ◽  
Quantitative Information ◽  
Ion Source ◽  
Laser Ion Source ◽  
Diagnostic Systems ◽  
Degree Of Ionization ◽  
Ion Energy ◽  
Charged Ions ◽  
Deposited Film

We report on the results concerning the characteristics and the behavior of expanding plasma generated by a Laser Ion Source (LIS). The LIS technique is an efficient means in producing of multi-charged ions utilizing pulsed laser beams. In order to extract Cu ions, in this experiment an XeCl excimer UV laser was employed, providing a power density on the target surface up to 5 × 108 W/cm2. Two typologies of diagnostic systems were developed in order to detect the plasma current and the ion energy. The time-of-flight (TOF) measurements were performed exploiting either a Faraday cup or an Ion Energy Analyzer (IEA). This latter allowed getting quantitative information about the relative ion abundances, their kinetic energy and their charge state. To study the plasma characteristics we measured the total etched material per pulse at 70 mJ. It was 0.235 μg and the overall degree of ionization, 16%. The angular distribution of the ablated material was monitored by optical transmission analysis of the deposited film as a function of the angle with respect to the normal to the target surface. Applying a high voltage to an extraction gap a multi-charged ion beam was obtained; different peaks could be distinguished in the TOF spectrum, resulting from the separation of ions of hydrogen, adsorbed compounds in the target and copper.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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