scholarly journals Exploring the Capabilities of Scanning Microwave Microscopy to Characterize Semiconducting Polymers

2020 ◽  
Vol 10 (22) ◽  
pp. 8234
Author(s):  
Olivier Douhéret ◽  
Didier Théron ◽  
David Moerman
Keyword(s):  
High Sensitivity ◽  
Microwave Frequency ◽  
Semiconducting Polymers ◽  
Solid State Physics ◽  
Characterization Methods ◽  
Microwave Microscopy ◽  
High Impedance ◽  
Microwave Characterization ◽  
Capacitive Properties ◽  
Scanning Microwave Microscopy

Standing at the meeting between solid state physics and optical spectroscopy, microwave characterization methods are efficient methods to probe electronic mechanisms and mesoscopic transport in semiconducting polymers. Scanning microwave microscopy, augmented with a Mach-Zehnder interferometer detection unit to allow for the probing of high impedance structures was applied on poly(3-hexylthiophene-2,5-diy) and exhibited high sensitivity while operating at the nanoscale. Provided a well-defined experiment protocol, S11 phase and amplitude signals are shown to lead simultaneously yet independently to probing the variations of the dielectric properties in the materials, i.e., conductive and capacitive properties, respectively, upon applied DC gate bias. Adjusting the operating microwave frequency can also serve to probe carrier trapping mechanisms.

Enhanced Scanning Nonlinear Dielectric Microscopy with Stepwise dC/dV and dC/dz Imaging—Achieving Qualitative, Quantitative and Artifact-Free Carrier Density Profiling of Semiconductor Devices

2018 ◽  
Author(s):  
T. Yamaoka ◽  
S. Hasumura ◽  
R. Hirose ◽  
T. Ueno ◽  
K. Tamura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Semiconductor Devices ◽  
High Sensitivity ◽  
Free Carrier ◽  
Nonlinear Dielectric ◽  
Microwave Microscopy ◽  
Free Carrier Density ◽  
Scanning Microwave Microscopy ◽  
Device Miniaturization ◽  
High Sensitivity Detection

Abstract High-resolution and high-sensitivity detection of free carriers in semiconductors is critical due to the trend of device miniaturization and diversification. To address this need, the AFM-based techniques of scanning spreading resistance microscopy, scanning capacitance microscopy, scanning nonlinear dielectric microscopy (SNDM), scanning microwave impedance microscopy, and scanning microwave microscopy are used. This paper demonstrates enhanced SNDM with stepwise dC/dV and dC/dz imaging, qualitative analysis, quantitative analysis, and artifact-free carrier-density profiling of semiconductor devices. The trace mode in enhanced SNDM is switched between contact (dC/dV measurement) state and non-contact (dC/dz measurement) state for every line scan whereby the sampling intelligent scan mode is switched these states every pixel. Using IMEC Si standards and Si power MOSFET as examples demonstrates that this SNDM methodology can provide qualitative, quantitative, and artifact-free carrier density profiling of semiconductor devices.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

scholarly journals Progress in Traceable Nanoscale Capacitance Measurements Using Scanning Microwave Microscopy

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 820
Author(s):  
François Piquemal ◽  
José Morán-Meza ◽  
Alexandra Delvallée ◽  
Damien Richert ◽  
Khaled Kaja
Keyword(s):  
Uncertainty Budget ◽  
Dielectric Constants ◽  
Electrical Measurements ◽  
Capacitance Measurements ◽  
Uncertainty Sources ◽  
Microwave Microscopy ◽  
Calibration Methods ◽  
Combined Uncertainty ◽  
Calibration Samples ◽  
Scanning Microwave Microscopy

Reference samples are commonly used for the calibration and quantification of nanoscale electrical measurements of capacitances and dielectric constants in scanning microwave microscopy (SMM) and similar techniques. However, the traceability of these calibration samples is not established. In this work, we present a detailed investigation of most possible error sources that affect the uncertainty of capacitance measurements on the reference calibration samples. We establish a comprehensive uncertainty budget leading to a combined uncertainty of 3% in relative value (uncertainty given at one standard deviation) for capacitances ranging from 0.2 fF to 10 fF. This uncertainty level can be achieved even with the use of unshielded probes. We show that the weights of uncertainty sources vary with the values and dimensions of measured capacitances. Our work offers improvements on the classical calibration methods known in SMM and suggests possible new designs of reference standards for capacitance and dielectric traceable measurements. Experimental measurements are supported by numerical calculations of capacitances to reveal further paths for even higher improvements.

scholarly journals Improvement of spatial resolution by tilt correction in near-field scanning microwave microscopy

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035114
Author(s):  
Xianfeng Zhang ◽  
Zhe Wu ◽  
Quansong Lan ◽  
Zhiliao Du ◽  
Quanxin Zhou ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
Tilt Correction ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Near Field Scanning

Quantitative Scanning Microwave Microscopy of Few-layer Platinum Diselenide

2021 ◽  
Author(s):  
Xiaopeng Wang ◽  
Kuanchen Xiong ◽  
Lei Li ◽  
James C. M. Hwang ◽  
Xin Jin ◽  
...  
Keyword(s):  
Microwave Microscopy ◽  
Scanning Microwave Microscopy

scholarly journals Multimode quantitative scanning microwave microscopy of in situ grown epitaxial Ba1−xSrxTiO3 composition spreads

2001 ◽  
Vol 79 (26) ◽  
pp. 4411-4413 ◽  
Author(s):  
K. S. Chang ◽  
M. Aronova ◽  
O. Famodu ◽  
I. Takeuchi ◽  
S. E. Lofland ◽  
...  
Keyword(s):  
Microwave Microscopy ◽  
Scanning Microwave Microscopy
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